• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.64-68
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• 1995

Silicon films were deposited at $430^{\circ}C$ by remote plasma chemical vapor deposition(RPECVD) with a gas mixture of $Si_2H_6/SiF_4/H_2$. The silicon films deposited without and with $SiF_4$ were characterized using atomic force microscopy(AFM), transmission electron microscopy(TEM) and X-ray diffraction(XRD). Both silicon films have the same rugged surface morphology, but, the silicon film deposited with $SiF_4$ exhibits more rugged. The silicon film deposited without $SiF_4$ is amorphous, whereas the silicon film deposited with $SiF_4$ is polycrystalline with very small needle-like grains which are perpendicular to the substrate and uniformly distributed in the thickness of the film. The silicon film deposited with $SiF_4$ was found to have a preferred orientation along the growth direction with the<110> of the film parallel to the <111> of the substrate. The effect of $SiF_4$ during RPECVD was discussed.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1414-1417
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• 1996

The purpose of this study Is to research and develop $V_{6}O_{13}$ composite cathode for lithium thin film battery. $V_{6}O_{13}$ represents a class of cathode active material used in Li rechargeable batteries. In this study, we investigated cyclic voltammetry and charge/discharge characteristics of $V_6O_{13}$/SPE/Li cells. Cyclic voltammogram of $V_{6}O_{13}$/SPE/Li cell at scan rate 1mV/sec showed reduction peaks of 2.25V and 2.4V and oxidation peaks of 2.4V and 2.2V. The discharge curve of $V_{6}O_{13}$/SPE/Li cell showed 4 potential plateaus. The discharge capacity was decreased in the beginning of charge/discharge cycling. After 8th cycling, the discharge capacity was stable. The discharge capacity of 1st cycle and 15th cycle was 290mAh/g and 147mAh/g at $25^{\circ}C$, respectively.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1352-1354
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• 1998

$LiNbO_3$ transistor showed relatively stable characteristic, low interface trap density, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$ thin films grown directly on p-type Si(100) substrates by 13.56 MHz rf magnetron sputtering system for FRAM applications. To take advantage of low temperature requirement for growing films, we deposited $LiNbO_3$ films lower than $300 ^{\circ}C$. RTA(Rapid Thermal Anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60 sec. We learned from X-ray diffraction that the RTA annealed films were changed from amorphous to poly-crystalline $LiNbO_3$ which exhibited (012), (015), and (022) orientations. The I-V characteristics of $LiNbO_3$ films before and after anneal treatment showed that RTA improved the leakage current of films. The leakage current density of films decreased from $10^{-5}$ to $10^{-7} A/cm^2$ at room temperature measurement. Breakdown electric field of the films exhibited higher than 500 kV/cm. The C-V curves showed the clockwise hysteresis represents ferroelectric switching characteristics. From C-V curves, we calculated dielectric constant of thin film $LiNbO_3$ as 27.5 which is close to that of bulk value.

• Journal of the Korean Applied Science and Technology
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• v.6 no.2
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• pp.39-44
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• 1989

(N-docosyl pyridinium)-TCNQ(1:1) complex was synthesized by reacting N-docosyl pyridinium bromide and LiTCNQ. This complex was investigated and confirmed by elemental analysis. U.V, I.R spectra. A stability to the dispersion solvent, which is acetonitrile, dichloromethane, benzene, chloroform and acetonitrile-benzene (1:1, V/V) of (N-docosyl pyridinium)-TCNQ(1:1) complex was investigated by U. V spectrophotometer and was confirmed stabilized on acetonitrile, benzene and acetonitrile-benzene(1:1'V/V) for 7 hours. Using ultra pure water as subphase for L-B film deposition, the Y-type L-B film of (N-docosyl pyridinium)-TCNQ(1:1) complex was farbricated. The electrical conductivities on a perpendicular direction of the L-B film were measured to be $5{\times}10^{-5}{\sim}5{\times}10^{-14}$S/cm according to the number of layer.

• International journal of advanced smart convergence
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• v.8 no.2
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• pp.227-236
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• 2019

In this study, we develop a Korotkoff sound based automatic blood pressure measurement device including sensor, hardware, and analysis algorithm. PVDF-based sensor pattern was developed to function as a vibration sensor to detect of Korotkoff sounds, and the film's output was connected to an impedance-matching circuit. An algorithm for determining starting and ending points of the Korotkoff sounds was established, and clinical data from subjects were acquired and analyzed to find the relationship between the values obtained by the auscultatory method and from the developed device. The results from 86 out of 90 systolic measurements and 84 out of 90 diastolic measurements indicate that the developed device pass the validation criteria of the international protocol. Correlation coefficients for the values obtained by the auscultatory method and from the developed device were 0.982 and 0.980 for systolic and diastolic blood pressure, respectively. Blood pressure measurements based on Korotkoff sound signals obtained by using the developed PVDF film-based sensor module are accurate and highly correlated with measurements obtained by the traditional auscultatory method.

• The Journal of the Acoustical Society of Korea
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• v.16 no.2
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• pp.89-94
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• 1997

A new type SO$_2$ gas sensor with a particular inorganic thin film on SAW devices was developed. The sensor consisted of twin SAW oscillators of the center frequency of 54 MHz fabricated on the LiTaO$_3$ piezoelectric single crystal. One delay line of the sensor was coated with a CdS thin film that selectively adsorbed and desorbed SO$_2$, while the other was uncoated for use as a stable reference. Deposition of the CdS thin film was carried out by the spray pyrolysis method using an ultrasonic nozzle. The sensor could measure the concentration in air less than 0.25 parts per million of SO$_2$. Stability of the sensor turned out to be as good as less than 20ppm, recovery time after each measurement was as short as 5 minutes. Repeatability of the measurement was confirmed through so many reiterated experiments. Hence, the SAW sensor developed through this work showed promising performance as a microsensing tool of SO$_2$. Further work required to improve the performance of the sensor includes enhancement of the reactivity of the CdS thin film with SO$_2$ through appropriate dopant addition, an increase of the center frequency of the SAW device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.339-342
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• 2000

Polypyrrole(PPy) nanotubules were formed within template pores by chemical synthesis using $FeCl_3$ as an oxidant. The oxidation peak of PPy nanotubules in the cyclic voltammogram was observed at about 2.8V and 3.3V vs. $Li/Li^+$, while in the case of PPy film, that was observed at about 3.0V. It suggests that the electron hopping on the main chain of PPy nanotubules was improved. When the PPy nanotubules was used to a cathode of lithium secondary battery, we obtained discharge capacity as much as 27 mAh/g, and initial coulomb efficiency by 90%. We expect that the capacity can be improved by further study.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.11
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• pp.27-32
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• 1999

Metal-ferroelectric-semiconductor devices by susing rapid thermal annealed $LiNbO_3/Si$(100) structures were fabricated and demonstrated nonvolatile memory operations. The estimated field-effect electron mobility and transconductance on a linear region of the fabricated FET were about $600cm^2/V{\cdot}s$ and 0.16mS/mm, respectively. The ID-VG characteristics of MFSFET's showed a hysteresis loop due to the ferroelectric nature of the $LiNbO_3 films. The drain current of the on state was more than 4 orders of magnitude larger than the off state current at the same read gate voltage of 0.5V, which means the memory operation of the MFSFET. A write voltage as low as ${\pm}3V$, which is applicable to low power integrated circuits, was used for polarization reversal. The ferroelectric capacitors showed no polarization degradation up to $10^{10}$ switching cycles with the application of symmetric bipolar voltage pulse (peak-to-peak 6V, 50% duty cycle) of 500kHz.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1051-1054
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• 2009

This paper investigates approaches for improving effective mobility of organic thin film transistors (OTFTs). We consider gate dielectric optimization, whereby we demonstrated >2x increase in mobility by using a silicon-rich silicon nitride ($SiN_x$) gate dielectric for polythiophene-based (PQT) OTFTs. We also engineer the dielectric-semiconductor ($SiN_x$-PQT) interface to attain a 27x increase in mobility (up to 0.22 $cm^2$/V-s) using an optimized combination of oxygen plasma and OTS SAM treatments. Augmentative material systems by combining 1-D nanomaterials (e.g., carbon nanotubes, zinc oxide nanowires) in an organic matrix for nanocomposite OTFTs provided a further boost in device performance.

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.284-285
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• 2003

Significant research interest in the growth and characterization of $Y_2$O$_3$：Eu$^{3+}$ thin films has been shown over the last few years because of the promise for applications of display devices. Although an Eu-doped oxysulfide (Eu： $Y_2$O$_2$S) which has an efficiency of 13％ has been used for a traditional cathode ray tube (CRT) red phosphor, the sulfide system is known to degrade rapidly under the high current densities needed for field-emission display (FED) technology. (omitted)d)