• Title/Summary/Keyword: $Li_2PtO_3$

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An Analysis of Structural Characteristics in Amorphous Vanadium Oxide ($V_2$$O_5$) Cathode Film for Thin Film Batteries after Cycling by High-resolution Electron Microscopy (HREM) (고분해능 투과전자 현미경을 이용한 박막 전지용 비정질 산화 바나듐 양극 박막의 충-방전에 따른 구조변화 분석)

  • 김한기;성태연;전은정;옥영우;조원일;윤영수
    • Journal of the Korean Ceramic Society
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    • v.38 no.3
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    • pp.274-279
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    • 2001
  • Pt/Ti/Si 기판 위에 성장시킨 박막 전지용 비정질 산화 바나듐 박막에 고상 전해질 박막 LiPON을 이용하여 전고상형 박막전지를 제작하여 충-방전 시험을 시행하였다. 이렇게 제작된 전고상형 박막전지는 500 사이클 이상까지 평균 15$\mu$Ah의 방전용량을 나타내었으나 초기 사이클 영역부터 방전 용량의 감소가 일어나기 시작했다. 박막 전지의 방전 용량 감소에 따른 비정질 산화 바나듐 박막의 구조적 특성 변화를 관찰하기 위하여 고분해능 현미경 분석을 시행하였다. 충-방전을 하지 않은 초기의 산화 바나듐 박막은 입계를 갖지 않고 다결정 특성을 보이지 않는 완전한 비정질 특성을 보였고 이는 TED 결과와 일치하였다. 그러나 450번의 반복적인 충-방전을 시행한 후의 비정질 산화 바나듐 박막 내에는 microcrystalline 형태의 산화 바나듐의 형성됨을 고분해능 전자 현미경 분석을 통해 발견할 수 있었다. 비정질 산화바나듐 박막의 방전 용량 감소의 원인인 Li의 비가역적 탈-삽입은 비정질 내에 형성된 microcrystalline에 의해 유발된다고 사료된다. 또한 LiPON 전해질 박막과 산화 바나듐 박막사이의 계면에 Li 이온과 산화바나듐과의 반응에 의해 형성된 계면 층에 발견할 수 있었는데 이러한 계면 층 역시 Li 확산과 계면 저항에 영향을 주어 방전 용량 감소에 원인으로 작용한다.

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Bi-electrolyte Carbon Dioxide Gas Sensor Based on Paste Sodium-Beta Alumina and Yttria-stabilized Zirconia

  • Han, Hyeuk Jin;Park, Chong Ook
    • Journal of Sensor Science and Technology
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    • v.23 no.3
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    • pp.170-172
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    • 2014
  • $CO_2$ sensor was used only one solid electrolyte in many cases. To improve the sensing characteristics of $CO_2$ sensors, solid electrolyte $CO_2$ sensor has been developed by bi-electrolyte type sensor using Na-Beta-alumina and YSZ. However, in many further studies, bi-electrolyte type sensor was made by pellet pressed by press machine and additional treatment for formation of interface. In the aspect of mass production, using thick film and additional treatment is not suitable. In this study, $CO_2$ sensor was fabricated by bi-electrolyte structure which was made by an NBA paste layer deposited on YSZ pellet and fired at $1650^{\circ}C$ for 2 hour. The formation of stable interface between YSZ and NBA were confirmed by SEM image. When the type IV electrochemical cell arrangement represented by $CO_2,O_2,Pt{\mid}Li_2CO_3-CaCO_3{\parallel}NBA{\parallel}YSZ{\mid}O_2,Pt$ is used to measure the $CO_2$ concentration in air. This sensor EMF should depend only on the concentration of $CO_2$ by logarithmic. Also, sensor shows $P_{CO_2}$ and EMF relationship like nerstian reaction at a temperature of $450^{\circ}C$.

Effect of Annealing Atmosphere on the La2O3 Nanocrystallite Based Charge Trap Memory

  • Tang, Zhenjie;Zhao, Dongqiu;Hu, Huiping;Li, Rong;Yin, Jiang
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.2
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    • pp.73-76
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    • 2014
  • $Pt/Al_2O_3/La_2Si_5O_x/SiO_2/Si$ charge trap memory capacitors were prepared, in which the $La_2Si_5O_x$ film was used as the charge trapping layer, and the effects of post annealing atmospheres ($NH_3$ and $N_2$) on their memory characteristics were investigated. $La_2O_3$ nanocrystallites, as the storage nodes, precipitated from the amorphous $La_2Si_5O_x$ film during rapid thermal annealing. The $NH_3$ annealed memory capacitor showed higher charge storage performances than either the capacitor without annealing or the capacitor annealed in $N_2$. The memory characteristics were enhanced because more nitrogen was incorporated at the $La_2Si_5O_x/SiO_2$ interface and interfacial reaction was suppressed after the $NH_3$ annealing treatment.

Effect of Laser Pulse Repetition Rate on the Electrical Properties of $Pb(Zr_{0.48}Ti_{0.52})O_3$ (PZT) Thin Films grown by Pulsed Laser Deposition (펄스 레이저 증착법에 의해 제작된 Laser pulse repetition rate의 변화에 따른 $Pb(Zr_{0.48}Ti_{0.52})O_3$ (PZT) 박막의 전기적 특성)

  • Li, Dong-Hua;Lee, Sang-Yeol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.11-12
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    • 2005
  • [ $Pb(Zr_{0.48}Ti_{0.52})O_3$ ] (PZT) thin films were deposited on Pt(111)/Ti/$SiO_2$/Si substrates by pulsed laser deposition. In order to study the effect of different laser pulse repetition rate on the dielectric and ferroelectric properties of PZT thin films,2 Hz and 5 Hz of laser pulse repetition rate were selected. We compared the results of XRD pattern, dielectric constant and hysteresis characteristics. From the experimental data, we found that the electrical properties of PZT thin films which grown ar 2 Hz of laser pulse repetition rate were better than those which grown at 5 Hz of laser pulse repetition rate.

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Fabrication of Photoelectrochromic Devices Composed of Anodized TiO2 and WO3 Nanostructures (양극산화된 TiO2 및 WO3 나노구조체로 구성된 광전기변색 소자 제작)

  • Lee, Sanghoon;Cha, Hyeongcheol;Nah, Yoon-Chae
    • Journal of Powder Materials
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    • v.22 no.5
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    • pp.326-330
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    • 2015
  • In this study, we demonstrate the photoelectrochromic devices composed of $TiO_2$ and $WO_3$ nanostructures prepared by anodization method. The morphology and the crystal structure of anodized $TiO_2$ nanotubes and $WO_3$ nanoporous layers are investigated by SEM and XRD. To fabricate a transparent photoelectrode on FTO substrate, a $TiO_2$ nanotube membrane, which has been detached from Ti substrate, is transferred to FTO substrate and annealed at $450^{\circ}C$ for 1 hr. The photoelectrode of $TiO_2$ nanotube and the counter electrode of $WO_3$ nanoporous layer are assembled and the inner space is filled with a liquid electrolyte containing 0.5 M LiI and 5 mM $I_2$ as a redox mediator. The properties of the photoelectrochromic devices is investigated and Pt-$WO_3$ electrode system shows better electrochromic performance compared to $WO_3$ electrode.

Fabrication and characterization of $SnO_2$ anode thin film for thin film secondary battery (박막형 2차전지용 $SnO_2$음극 박막의 제작 및 특성 평가)

  • 이성준;신영화;윤영수;조원일
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.571-574
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    • 2000
  • In this study, Tin oxide thin film for secondary battery was deposited on Pt/Ti/Si(100). It was fabricated by r.f. reactive sputtering with Tin metal target. At constant power (130W), pressure (Base 5$\times$10$^{-6}$ Torr, working 5$\times$10$^{-3}$ Torr) and at room temperature, it was fabricated by Ar/O2 gas ratio. After deposition, we got AFM & SEM to investigated surface of thin films and had XRD to find crystalline of thin films. Charge/discharge characteristics were carried out in 1M LiPF$_{6}$ , EC:DMC = 1:1 liquid electrolyte using lithium metal at room temperature.

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Chemical Stability of Conductive Ceramic Anodes in LiCl-Li2O Molten Salt for Electrolytic Reduction in Pyroprocessing

  • Kim, Sung-Wook;Kang, Hyun Woo;Jeon, Min Ku;Lee, Sang-Kwon;Choi, Eun-Young;Park, Wooshin;Hong, Sun-Seok;Oh, Seung-Chul;Hur, Jin-Mok
    • Nuclear Engineering and Technology
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    • v.48 no.4
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    • pp.997-1001
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    • 2016
  • Conductive ceramics are being developed to replace current Pt anodes in the electrolytic reduction of spent oxide fuels in pyroprocessing. While several conductive ceramics have shown promising electrochemical properties in small-scale experiments, their long-term stabilities have not yet been investigated. In this study, the chemical stability of conductive $La_{0.33}Sr_{0.67}MnO_3$ in $LiCl-Li_2O$ molten salt at $650^{\circ}C$ was investigated to examine its feasibility as an anode material. Dissolution of Sr at the anode surface led to structural collapse, thereby indicating that the lifetime of the $La_{0.33}Sr_{0.67}MnO_3$ anode is limited. The dissolution rate of Sr is likely to be influenced by the local environment around Sr in the perovskite framework.

Etching of Pt Thin Film for SAW Filter Fabrication (표면탄성파 필터 제작을 위한 Pt 박막 식각)

  • Choi, Yong-Hee;Song, Ho-Young;Park, Se-Geun;Lee, Taek-Joo;O, Beom-Hoan;Lee, Seung-Gol;Lee, El-Hang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.103-107
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    • 2003
  • The inductively coupled plasma(ICP) etching process was selected to fabricate RF Surface Acoustic Wave(SAW) filters and a Pt thin film was sputtered on a $LiTaO_3$ substrate applied to electrode materials to reduce the spurious response and improve the power durability. Steep sidewall pattern was achieved employing $C_4F_8/Ar/Cl_2$ gas chemistry. We investigated an etching mechanism and parameter dependence of the Pt thin film about $C_4F_8$ addition. Sidewall etch angle was about $80^{\circ}$ at the $C_4F_8$ 20% mixing ratio. Fabricated SAW filter is consists of some series and parallel arm SAW resonators which work as impedance elements and show capacitance characteristics at out of the passband. It can be modified for $800{\sim}900\;MHz$ RF filters. External matching circuits were unnecessary.

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Effect of the hydrogen annealing on the $Pb(Zr_{0.52}Ti_{0.48})O_3$ film using $(Pb_{0.72}La_{0.28})Ti_{0.94}O_3$ buffers ($(Pb_{0.72}La_{0.28})Ti_{0.94}O_3$ buffer를 사용한 $Pb(Zr_{0.52}Ti_{0.48})O_3$ 박막의 수소 후열처리 효과)

  • Lee, Eun-Sun;Li, Dong-Hua;Chung, Hyun-Woo;Lim, Sung-Hoon;Lee, Sang-Yeol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.191-194
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    • 2004
  • Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT) 박막을 $Pt(111)/Ti/SiO_2/Si$ 기판위에 증착되었고, 수소 후열처리 후의 특성변화를 연구하였다. 동시에 10 nm의 $(Pb_{0.72}La_{0.28})Ti_{0.94}O_3$ (PLT) buffer를 사용한 PZT 박막의 수소 후열처리 효과를 관찰하였다. PZT 박막의 경우, 수소 후열처리 전과 후에 강유전 특성이 현저하게 감소한 반면, PLT buffer가 사용된 PZT 박막의 경우, 강유전 특성에 거의 변화가 없었다. 이는 PLT buffer를 사용함으로써 PZT 박막의 배향성이 향상되고, 이에 따라 forming gas에 의한 수소원자가 박막 내로의 침투가 어렵게 된다. 따라서 수소원자에 대한 PZT 박막의 열화되는 현상이 buffer를 사용하는 경우, 거의 나타나지 않게 된다.

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Single Crystalline ${\beta}$-Na0.33V2O5 Nanowires Based Supercapacitor

  • Trang, Nguyen Thi Hong;Shakir, Imran;Kang, Dae-Joon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.587-587
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    • 2012
  • Supercapacitors, which can deliver significant energy with high power density, have attracted a lot of attention due to their potential application in energy storage. Among various oxide materials, sodium vanadate has been recognized as one of the most promising electrode materials because of high electrical conductivity. In addition, larger layer spacing of ${\beta}$-Na0.33V2O5 compared to V2O5 makes easier Li+ insertion. Moreover, ${\beta}$-Na0.33V2O5 has a tunnel like structure along b axis with 3 kinds of V site allowing it to enhance the ion intercalation by introducing three different intercalation sites along the tunnel. The tunnel can act as a fast diffusion path for ion diffusion, which can improve the overall charge storage kinetics. In this study, high quality single crystalline sodium vanadate (${\beta}$-Na0.33V2O5) nanowires were grown directly on Pt coated $SiO_2$ substrate by a facile chemical solution deposition method without employing catalyst, surfactant or carrier gas. The results show that great enhancement in capacitance was observed compared with previous reports.

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