• 한국진공학회지
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• 제21권2호
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• pp.78-85
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• 2012

Poly-Monochloro-Para-Xylylene (Parylene-C)과 알루미늄 박막과의 접착력을 향상시키기 위하여 Duoplasmatron 이온원을 이용하여 발생시킨 아르곤 이온과 산소 이온을 Parylene-C 표면에 각각 조사하였다. 이온조사 시 이온에너지는 1 kV로 고정하였고 이온조사량은 $5{\times}10^{14}$에서 $1{\times}10^{17}/cm^2$까지 변화시켰다. 아르곤 이온과 산소 이온을 조사한 Parylene-C 박막의 물과의 접촉각은 초기 $78^{\circ}$에서 각각 $17^{\circ}$와 $9^{\circ}$까지 감소하였다. X선 광전자 스펙트럼을 이용하여 Parylene-C 표면에 이온빔 조사에 의하여 친수성 그룹이 형성되었음을 알 수 있었으며, 이 친수성 그룹들은 C-O 결합, C=O 결합 그리고 (C=O)-O 결합에 의한 것임을 알 수 있었다. Al 박막과 ${O_2}^+$ 이온에 의해 표면 개질된 Parylene-C 박막과의 접착력을 평가하기 위하여 cross cut tape test를 실시한 결과 접착력은 이온조사량이 증가할수록 향상됨을 알 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.2044-2046
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• 2000

A system to monitor the ion mass and charge-state as well as plasma potential value during plasma source ion implantation (PSII) has been developed. It was tested with 30-kV PI3D setup using alternatively hot cathode do (HC) and inductively coupled RF (ICP) discharge sources. The design and performance of the system will be described, and experimental results in nitrogen and argon plasmas produced by modular HC-ICP source will be discussed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 D
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• pp.2531-2533
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• 2001

This paper describes a low noise and high efficiency analog-digital switching mixed mode battery charger for production facilities of Li-Ion batteries. The requirements for battery chargers for production facilities are very strict. The accuracy of output voltage and output current should be below 0.1% with very low ripple current. Therefore analog type linear regulators are widely used for battery charger in spite of their inefficiency and bulkiness. We combined linear regulator as a voltage source with digital switching converter as a dependent current source. Low current ripple and high accuracy are obtained by linear regulator while high efficiency is achieved by digital switching converter. Experimental results show that proposed method has 0.1% ripple and 90% efficiency at an output current of 1A for a battery voltage of 4V.

• International Journal of Precision Engineering and Manufacturing
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• 제7권4호
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• pp.47-50
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• 2006

SCM415 alloy was implanted with nitrogen ions using plasma source ion implantation (PSII), at a dose range of $1{\times}10^{17}\;to\;6{\times}10^{17}\;N^+cm^{-2}$ Auger electron spectrometry (AES) was used to investigate the depth profile of the implanted layer. Friction and wear tests were carried out on a block-on-ring wear tester. Scanning electron microscopy (SEM) was used to observe the micro-morphology of the worn surface. The results revealed that after being implanted with nitrogen ions, the frictional coefficient of the surface layer decreased, and the wear resistance increased with the nitrogen dose. The tribological mechanism was mainly adhesive, and the adhesive wear tended to become weaker oxidative wear with the increase in the nitrogen dose. The effects were mainly attributed to the formation of a hard nitride precipitate and a supersaturated solid solution of nitrogen in the surface layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1996년도 제10회 학술발표회 논문개요집
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• pp.102-102
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• 1996

This paper represents a new type low power High Frequency technological ion source (HF TIS) for ion - beam processing: the surface modification of materials, cleaning of surface, sputtering, coating of thin films, and polishing. The operational principle of HF TIS is based on the excitation of electrostatic waves in plasma located in the external magnetic field. Low power HF TIS with diameter 92 rom gives the opportunity to obtain beams of inert and chemically reactive gases with currents range from 5 to 150 mA (current density $0.015\;~\;3.5\;mA/\textrm{m}^2$) and ion beam energy 100 ~ 2500 eV at a HF power level 10 ~ 150 W. Three grid concave type ion optical system (IOS) is used for extraction and formation ofion beam.n beam.

• Mass Spectrometry Letters
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• 제3권4호
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• pp.87-92
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• 2012

In this study, we explored a new approach for generating ions of organics and biomolecules using contactless atmospheric pressure ionization (C-API). That is, a tapered capillary (~20 cm) was connected to a syringe, which was coupled to a syringe pump for providing a given flow rate to introduce sample solution to the proximity of a mass spectrometer. The gas phase ions derived from analytes were readily formed in the capillary outlet, which was very close to the mass spectrometer (~1 mm). No external electric connection was applied on the capillary emitter. This setup is very simple, but it can function as an ion source. This approach can be readily used for the analysis of small molecules such as amino acids and large molecules such as peptides and proteins. The limit of the detection of this approach was estimated to be ~10 pM when using bradykinin as the sample. Thus, we believe that this approach should be very useful for being used as an alternative ion source because of its low cost, high sensitivity, simplicity, and ease of operation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.311-312
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• 2006

We studied homeotropic alignment effect for a nematic liquid crystal (NLC) on the $SiO_x$, thin film irradiated by the new ion beam method $SiO_x$ thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) and were treated by the DuoPIGatron ion source. A uniform liquid crystal alignment effect was achieved over 2100 eV ion beam energy. Tilt angle were about $90^{\circ}$ and were not affected by various ion beam energy.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.140-140
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• 2010

Non-mass analyzed ion shower doping (ISD) technique with a bucket-type ion source or mass-analyzed ion implantation with a ribbon beam-type has been used for source/drain doping, for LDD (lightly-doped-drain) formation, and for channel doping in fabrication of low-temperature poly-Si thin-film transistors (LTPS-TFT's). We reported an abnormal activation behavior in boron doped poly-Si where reverse annealing, the loss of electrically active boron concentration, was found in the temperature ranges between $400^{\circ}C$ and $650^{\circ}C$ using isochronal furnace annealing. We also reported reverse annealing behavior of sequential lateral solidification (SLS) poly-Si using isothermal rapid thermal annealing (RTA). We report here the importance of implantation conditions on the dopant activation. Through-doping conditions with higher energies and doses were intentionally chosen to understand reverse annealing behavior. We observed that the implantation condition plays a critical role on dopant activation. We found a certain implantation condition with which the sheet resistance is not changed at all upon activation annealing.

• 한국재료학회지
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• 제15권6호
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• pp.382-387
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• 2005

Polyvinylidene fluoride (PVDF) surface was irradiated and became superhydrophilic by low energy (180 eV) and high flux $(\~10^{15}/cm{\cdot}s)$ ion beam. As an ion source, a closed electron Hall drift thruster of $\phi=70mm$ outer channel size without grid was adopted. Ar, $O_2$ and $N_2O$ were used for source gases. When $N_2O^+$ and $O_2^+$ reactive gas ion beam were irradiated with the ion fluence of $5\times10^{15}/cm^2$, the wetting angle for deionized water was drastically dropped from $61^{\circ}\;to\;4^{\circ}\;and\;2^{\circ}$, respectively. Surface energy was also increased up to from 44 mN/m to 81 mN/m. Change of chemical component in PVDF surface was analyzed by x-ray photoelectron spectroscopy. Such a great increase of the surface energy was intimately related with the increase of hydrophilic group component in reactive ion irradiated PVDF surfaces. By using an atomic force microscopy, the root-mean-square of surface roughness of ion irradiated PVDF was not much altered compared to that of pristine PVDF.

• 한국재료학회지
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• 제10권7호
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• pp.459-463
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• 2000

순수한 동적 결합반응이고 전하 누적이 없는 이온 임플란테이션, 새로운 재료 개발 등에 음이온을 직접 사용하는 새로운 연구가 진행되고 있으며, 이러한 관점에서 새로운 고체상의 Cs이온 법이 실험실 규모로 연구되고 있다. 본 논문에서는 음이온 Cs gun으로 DLC 박막을 실리콘 위에 제조하였다. 이 시스템은 가스가 필요없으므로, 고 진공에서 증착이 일어난다. C(sup)-빔 에너지는 80~150eV 사이에서 조절이 우수하였다. Raman 분석결과 박막의 DLC 지수, 즉$sp^3$비율은 이온 에너지 증가에 따라 증가하였으며, 미소 경도값 또한 7에서 14GPa로 증가하였다. DLC박막의 표면 평균거칠기(Ra)는 ~1$\AA$정도로 아주 매끈하였으며, 불순물이 내재되지 않는 박막을 얻을 수 있었다.