• 제목/요약/키워드: $IrO_2$electrode

검색결과 96건 처리시간 0.033초

수처리용 Ti/IrO2/SnO2-Sb-Ni 전극의 전기화학적 특성평가 (Electrochemical Properties of Ti/IrO2/SnO2-Sb-Ni Electrode for Water Treatment)

  • 양소영
    • 한국환경과학회지
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    • 제29권10호
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    • pp.943-949
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    • 2020
  • In this work, we prepared a heterojunction anode with a surface layer of SnO2-Sb-Ni (SSN) on a Ti/IrO2 electrode by thermal decomposition to improve the electrochemical activity of the Ti/IrO2 electrode. The Ti/IrO2-SSN electrode showed significantly improved electrochemical activity compared with Ti/IrO2. For the 0.1 M NaCl and 0.1 M Na2SO4 electrolytes, the onset potential of the Ti/IrO2-SSN electrode shifted in the positive direction by 0.1 VSCE and 0.4 VSCE, respectively. In 2.0-2.5 V voltages, the concentration in Ti/IrO2-SSN was 2.59-214.6 mg/L Cl2, and Ti/IrO2 was 0.55-49.21 mg/L Cl2. Moreover, the generation of the reactive chlorine species and degradation of Eosin-Y increased by 3.79-7.60 times and 1.06-2.15 times compared with that of Ti/IrO2. Among these voltages, the generation of the reactive chlorine species and degradation of Eosin-Y were the most improved at 2.25 V. Accordingly, in the Ti/IrO2-SSN electrode, it can be assumed that the competitive reaction between chlorine ion oxidation and water oxidation is minimized at an applied voltage of 2.25V.

$IrO_2$를 하부전극으로 사용한 $Sr_{0.9}Bi_{2+x}Ta_2O_9$ 박막의 유전 및 전기적 특성 (Dielectric and Electrical Properties of $Sr_{0.9}Bi_{2+x}Ta_2O_9$ Thin Films on $IrO_2$ Electrode)

  • 박보민;송석표;정병직;김병호
    • 한국세라믹학회지
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    • 제37권3호
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    • pp.233-239
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    • 2000
  • Sr0.9Bi2+xTa2O9(x=0, 0.1, 0.2, 0.3) thin films on IrO2/SiO2/Si or Pt/Ti/SiO2/Si substrate were prepared by spin coating method using SBT stock solutions synthesized by MOD process. SBT thin films on IrO2 transformed to layered perovskite phase at $700^{\circ}C$, but showed low breakdown voltage due to their porous microstructure. The smaple of Sr0.9Bi2+xTa2O9 composition showed the best dielectric and electrical properties. When the sample of the same composition was annealed at 80$0^{\circ}C$, the dielectric and electric properties were improved due to the grian growth and dense surface. the remanent polarization values(2Pr) at $\pm$3 V for IrO2 and Pt electrodes were 10.5, 7.15$\mu$C/$\textrm{cm}^2$, respectively. The SBT thin film with IrO2 electrode showed the lower coercive field. The leakage current density and breakdown voltage of SBT thin films on IrO2 were higher than those on Pt.

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강유전체 PZT박막의 신뢰도에 미치는 헤테로구조 전극의 영향에 대한 연구 (Effects of Heterostructure Electrodes on the Reliability of Ferroelectric PZT Thin Film)

  • 이병수;이복희;이덕출
    • 전기학회논문지P
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    • 제52권1호
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    • pp.14-19
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    • 2003
  • The effect of the Pt electrode and the $Pt-IrO_2$ hybrid electrode on the performance of ferroelectric device was investigated. The modified Pt thin films with non-columnar structure significantly reduced the oxidation of TiN diffusion barrier layer, which rendered it possible to incorporate the simple stacked structure of Pt/TiN/poly-Si plug. When a $Pt-IrO_2$ hybrid electrode is applied, PZT thin film properties are influenced by the thickness and the partial coverage of the electrode layers. The optimized $Pt-IrO_2$ hybrid electrode significantly enhanced the fatigue properties of the PZT thin film with minimal leakage current.

Sol-gel 법을 이용한 이성분 금속산화물 ($IrO_2-RuO_2$) pH 센서 (Binary Metal Oxide ($IrO_2-RuO_2$) pH Sensor Prepared by Sol-gel Method)

  • 이정란;오세림;한원식;홍태기
    • 한국응용과학기술학회지
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    • 제31권2호
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    • pp.190-196
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    • 2014
  • The sol-gel method was used to prepare binary metal oxide ($IrO_2-RuO_2$) pH sensor. The electrodes that mole percent compositions (mol%) of $IrO_2$ and RuO2 were 70:30 and 30:70 were selected. The characterizations of Nernstian response over pH range, response rate, interference on alkaline metals and reproducibility were investigated. Also the electroanalytical properties of these electrodes were evaluated in comparison with a commercial glass pH electrode. The composition of $IrO_2:RuO_2$ 70:30 mol% was chosen as better electrode formulation. The electrode was not susceptible to the action of interfering ions such as $Li^+$, $Na^+$ and $K^+$.

MOD 법으로 제조한 강유전성 SBT 박막에서 하부전극이 유전 및 전기적 특성에 미치는 영향 (Effects of Bottom Electrode to Dielectric and Electrical Properties of MOD Derived Ferroelectric SBT Thin Films)

  • 김태훈;송석표;김병호
    • 한국전기전자재료학회논문지
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    • 제13권8호
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    • pp.694-699
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    • 2000
  • S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ solutions was synthesized by MOD (metalorganic decomposition) method. SBT thin films with 2000$\AA$ thickness were prepared on Ir $O_2$/ $SiO_2$/Si and Pt/Ti/ $SiO_2$/Si substrates using the spin coating process and then investigated the dielectric and electrical properties of them. In the case of using Ir $O_2$bottom electrode the hysteresis loop was saturated at lower temperature than Pt/Ti electrode but the breakdown phenomenon was occurred at low voltage because of the rough surface morphology and porous microstructure of SBT thin films. As the results of the fatigue and imprint characteristics related to the lifetime and reliability of devices after 10$^{10}$ cycles the fatigue rates were about 10% at the Ir $O_2$and Pt/Ti bottom electrodes. Both SBT thin films with Ir $O_2$ and with Pt/Ti bottom electrodes show a slight tendency to imprint after 10$^{9}$ cycles but do not lead to a failure.e.e.

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Electrooxidation of tannery wastewater with continuous flow system: Role of electrode materials

  • Tien, Tran Tan;Luu, Tran Le
    • Environmental Engineering Research
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    • 제25권3호
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    • pp.324-334
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    • 2020
  • Tannery wastewater is known to contain high concentrations of organic compounds, pathogens, and other toxic inorganic elements such as heavy metals, nitrogen, sulfur, etc. Biological methods such as aerobic and anaerobic processes are unsuitable for tannery wastewater treatment due to its high salinity, and electrochemical oxidation offers a promising method to solve this problem. In this study, raw tannery wastewater treatment using DSA® Ti/RuO2, Ti/IrO2 and Ti/BDD electrodes with continuous flow systems was examined. Effects of current densities and electrolysis times were investigated, to evaluate the process performance and energy consumption. The results showed that a Ti/BDD electrode is able to reach higher treatment efficiency than Ti/IrO2, and Ti/RuO2 electrodes across all parameters, excluding Total Nitrogen. The main mechanism of tannery wastewater oxidation at a Ti/BDD electrode is based on direct oxidation on the electrode surface combined with the generation of oxidants such as °OH and Cl2, while at DSA® Ti/RuO2 and Ti/IrO2 electrodes, the oxidation mechanisms are based on the generation of chlorine. After treatment, the effluents can be discharged to the environment after 6-12 h of electrolysis. Electrooxidation thus offers a promising method for removing the nutrients and non-biodegradable organic compounds in tannery wastewater.

비대칭 마크네트론 스퍼터링을 이용한 이리듐 산화물 박막의 합성과 전기 화학적 특성분석 (Electro-Chemical Properties of Iridium Oxide Coated Ti Electrode Synthesized by Unbalanced Magnetron Sputtering Process)

  • 김성대;김상식;송진호
    • 한국표면공학회지
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    • 제40권5호
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    • pp.203-208
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    • 2007
  • Preliminary studies were conducted to develop a dimensionally stable anode (DSA)electrode prepared by reactive sputtering method. The microstructure, surface morphology and electrochemical properties of iridium oxide $(IrO_2)$ coatings synthesized by unbalanced magnetron sputtering (UBMS) and conventional DSA electrode were compared. In addition, the possibilities of $IrO_2$ films synthesized by UMB on a real DSA electrode were investigated by electro-chemical application test. The degree of non-stoichiometry and surface area were closely related to the electro-chemical activity of the $IrO_2$ electrode. The feasibility of making a DSA electrode prepared by PVD technique was demonstrated through the present work.

SBT 박막의 저온화 공정을 위한 솔-젤법과 $IrO_2$하부전극의 효과 (Effects of Sol-Gel Process and $IrO_2$Bottom Electrode for Lowering Process Temperature of SBT Thin Films)

  • 선봉균;송석표;김병호
    • 한국세라믹학회지
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    • 제38권1호
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    • pp.39-44
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    • 2001
  • 솔-젤법으로 S $r_{0.9}$B $i_{2.1}$T $a_2$$O_{9}$ stock solution을 합성하고, Ir $O_2$/ $SiO_2$/Si 및 기판 위에 스핀코팅법으로 약 2000$\AA$ 정도의 두께를 가지고 SBT 박막을 제조하였다. Pt/Ti $O_{x}$ 전극을 사용한 SBT 박막과 비교하였을 때 Ir $O_2$전극을 사용한 SBT 박막의 경우 더 낮은 급속 열처리 온도 즉, 72$0^{\circ}C$에서 형석상에서 층상 페롭스카이트 상으로의 상전이가 관찰되었다. 그리고, Ir $O_2$전극을 사용한 SBT 박막은 낮은 열처리에서 결정성장이 이루어졌다. Ir $O_2$전극을 사용한 SBT 박막은 $650^{\circ}C$에서 열처리하였을 때 포화된 이력곡선을 얻었지만, Pt/Ti $O_{x}$ 전극을 사용한 SBT 박막은 $700^{\circ}C$에서 열처리하였을 때 이력곡선이 관찰되었다. Ir $O_2$전극을 사용한 SBT 박막은 $700^{\circ}C$의 열처리에서 8.79 $\mu$C/$ extrm{cm}^2$ (3V)의 2Pr 값을 나타내었다.나타내었다.다.

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PZT 박막제조시 하부전극과 buffer층에 따른 박막특성에 관한 연구 (Characteristics of PZT thin films with varying the bottom-electrodes and buffer layer)

  • 이희수;오근호
    • 한국결정성장학회지
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    • 제6권2호
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    • pp.177-184
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    • 1996
  • 본연구에서는 금속타겟을 이용한 반응성 스퍼터링법을 이용하여 PZT 박막의 전극 및 계면 특성의 개선을 위해, $Pt/SiO_{2}/Si$$Ir/SiO_{2}/Si$기판을 각각 사용하였으며, buffer layer로는 $PbTiO_{3}$을 이용하였다. Pt하부전극을 이용하여 PZT 박막제조시 randomly oriented PZT 박막이 얻어졌으나, buffer layer를 이용한 경우 (100)으로 배향된 결정성이 좋은 PZT 박막을 얻을 수 있었다. Ir하부전극을 이용한 경우, buffer layer증착에 따른 PZT 박막의 상형성이 다소 증진되었으며, Pt하부전극의 경우에 비해 잔류분극의 증가와 항전계의 감소를 관찰할 수 있었다. PZT 박막제조시 buffer layer의 이용에 따라 유전율이 증가함을 알 수 있었으며, 또한 Ir하부전극의 경우가 Pt하부전극의 경우보다 더 좋은 유전특성이 얻어졌다.

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Effects of Heterostructure Electrodes on the Reliability of Ferroelectric PZT Thin Films

  • Kim, Seung-Hyun;Woo, Hyun-Jung;Koo, Chang-Young;Yang, Jeong-Seung;Ha, Su-Min;Park, Dong-Yeon;Lee, Dong-Su;Ha, Jo-Woong
    • 한국세라믹학회지
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    • 제39권4호
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    • pp.341-345
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    • 2002
  • The effect of the Pt electrode and the $Pt-IrO_2$ hybrid electrode on the performance of ferroelectric device was investigated. The modified Pt thin films with non-columnar structure significantly reduced the oxidation of TiN diffusion barrier layer, which rendered it possible to incorporate the simple stacked structure of Pt/TiN/poly-Si plug. When a $Pt-IrO_2$ hybrid electrode is applied, PZT thin film properties are influenced by the thickness and the partial coverage of the electrode layers. The optimized $Pt-IrO_2$ hybrid electrode significantly enhanced the fatigue properties with minimal leakage current.