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http://dx.doi.org/10.4191/KCERS.2002.39.4.341

Effects of Heterostructure Electrodes on the Reliability of Ferroelectric PZT Thin Films  

Kim, Seung-Hyun (INOSTEK Inc., Research and Development Center)
Woo, Hyun-Jung (INOSTEK Inc., Research and Development Center)
Koo, Chang-Young (INOSTEK Inc., Research and Development Center)
Yang, Jeong-Seung (INOSTEK Inc., Research and Development Center)
Ha, Su-Min (INOSTEK Inc., Research and Development Center)
Park, Dong-Yeon (INOSTEK Inc., Research and Development Center)
Lee, Dong-Su (INOSTEK Inc., Research and Development Center)
Ha, Jo-Woong (INOSTEK Inc., Research and Development Center)
Publication Information
Abstract
The effect of the Pt electrode and the $Pt-IrO_2$ hybrid electrode on the performance of ferroelectric device was investigated. The modified Pt thin films with non-columnar structure significantly reduced the oxidation of TiN diffusion barrier layer, which rendered it possible to incorporate the simple stacked structure of Pt/TiN/poly-Si plug. When a $Pt-IrO_2$ hybrid electrode is applied, PZT thin film properties are influenced by the thickness and the partial coverage of the electrode layers. The optimized $Pt-IrO_2$ hybrid electrode significantly enhanced the fatigue properties with minimal leakage current.
Keywords
Pt; TiN; Pt-IrO$_2$ hybrid electrode; Fatigue; PZT;
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1 K. G. Brooks, I. M. Reaney, R. Klissurska, Y. Huang, L. Bursil and N. Setter, 'Orientation of Rapid Thermally Annealed Lead Zirconate Titanate Thin Films on (Ill) Pt Substrates,' J. Mater. Res., 9 2540-53 (1994)   DOI   ScienceOn
2 J. H. Lee, T. S. Kim and K. H. Yoon, 'Thickness Depen-dence of Orientation, Longitudinal Piezoelectric and Elec-trical Properties of PZT Film Deposited by Using Sol-gel Methodd(in. Kor.),' J. Kor. Ceram. Soc., 38 [10] 942-47 (2001)
3 A. Grill, W. Kane, J. Viggiano, M. Brady and R. Laibowitz, 'Base Electrodes for High Dielectric Constant Oxide Mate-rials in Silicon Technoloey,' J. Mater. Res., 7 3260-65 (1992)   DOI
4 B-K Sun, S-P. Song and B-H. Kim, 'Effects of Sol-gel Pro-cess and Ir$O_2$, Bottom Electrodes for Lowering Process Tem-perature of SBT Thin Films(in Kor.),' J. Kor. Ceram. Soc., 38 [1] 39-44 (2001)
5 M. S. Jeon, H. S. Lee, I. D. Kim and D. K. Choi, 'Electhcal Properties and Comparison between PZT/Ir$O_2$, and PZT/Ir (in Kor.),' J. Kor. Ceram. Soc., 6 [1] 64-7 (2000)
6 S-H. Kim, D. J. Kim, J-P. Maria, A. I. Kingon, S. K. Stre-iffer, J. Im, O. Auciello and A. R. Krauss, 'Influence of Pt Heterostructure Bottom Electrodes on SBT Thin Film Properties,' Appl. Phys. Lett., 76 [4] 496-98 (2000)   DOI   ScienceOn
7 P. C. Mclntyre and S. R. Summerfelt, 'Kinetics and Mecha-nisms of TiN Oxidation beneath Pt Thin Films,' J. Appl. Phys., 82 [9] 4577-85 (1997)   DOI   ScienceOn
8 O. Auciello, K. D. Gifford and A. I. Kingon, 'Control of Structure and Electrical Properties of Lead Zirconium Titanate-based Ferroelecthc Capacitors Produced Using a Layer by Layer lon Beam Sputter Deposition Technique,' Appl. Phys. Lett., 64 2873-75 (1994)   DOI   ScienceOn
9 S-H. Kim, J. G. Hong, S. K. Streiffer and A. I. Kingon, 'The Effect of Ru$O_2$/Pt Hybrid Bottom Electrode Structure on the Leakage and Fatigue Properties of Chemical Solution Derived PZT Thin Films,' J. Mater. Res., 14 [3] 1018-25 (1999)   DOI   ScienceOn
10 C. K. Kwok and S. B. Desu, 'Low Temperature Perovskite Formation of Lead Zirconate Titanate Thin Films by a Seeding Layer,' J. Mater. Res., 8 339-44 (1993)   DOI
11 R. Ramesh, W. K. Chen, B. Wilkens, H. Gilchriest, T. Sands, J. M. Tarascon, V. G. Kermidas, D. K. Fork, J. Lee and A. Safari, 'Fatigue and Retention in Ferroelectric Y-Ba-Cu-O/Pb-Zr-Ti-O/Y-Ba-Cu-O Heterostructures,'Appl. Phys. Lett., 61 1537-39 (1992)   DOI
12 I. Stolichnov, A. Tagantsev, N. Setter, J. S. Cross and M. Tsukada, 'Top-interface-controlled Switching and Fatigue Endurance of PLZT Ferroelectric Capacitors,' Appl. Phys. Lett., 74 3552-54 (1999)   DOI