• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.141-141
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• 2010

The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.

• Current Photovoltaic Research
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• v.3 no.2
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• pp.65-70
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• 2015

We applied KF on CIGS film to modify CIGS surface with a wider-bandgap surface layer. With the KF deposition the surface of CIGS film had fine particle on the CIGS surface at 350 and $300^{\circ}C$. No fine particle was detected at 500 and $250^{\circ}C$. With the KF treatment, the Ga and O content increased at the surface, while the In and Cu content decreased. The valence band maximum was lowered with KF treatment. The composition profile and band structure were positive side of applying KF on the CIGS surface. However, the efficiency decreased with the KF treatment due to high series resistance, probably due to too thick surface layer. A smaller amount of KF should be supplied and more systematic analysis is necessary to obtain a reproducible higher efficiency CIGS solar cells.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.70-75
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• 1997

An improved technique based upon an electron beam evaporation system has been developed to prepare cubic thin films In crystalline semiconductors. Zinc blonde CdSe epilayers were grown on GaAs(100) substrate by an e-beam evaporation method. The lattice parameter obtained from (400) reflection is $6.077\AA$, which is in excellent agreement with the value reported in the literature for zinc blonde CdSe. The orientation of the as-grown CdSe epilayer is determined by electron channeling patterns. The crystallinity of epitaxial CdSe layers were investigated on the double crystal X-ray rocking curve. The carrier concentration and mobility of epilayers deduced by Hall effect measurement are about $10^{18}{\textrm}{cm}^{-3}$, $10^2\textrm{cm}^2/V{\cdot}sec$ at room temperature, respectively. The photocurrent spectrum peak of the epilayer at 30 K exhibits a sharp change at 1.746 eV due to the free exciton of cubic CdSe.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1895-1897
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• 1999

This paper describes the fabrication and performance characterizations of the CIGS$(CuInGaSe_2)$ solar cells and its prototype module. The CIGS cell and module were fabricated on the sodalime glass$(5\times5cm^2)$ by the well known three stage co-evaporation and series connection followed by patterning process. respectively. The developed minimodule with active area of $14.7cm^2$ showed 6.0% solar efficiency($V_{oc}$=3.2V, $I_{sc}$=79.8mA, FF=34.6%) in AM 1.5 condition.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.103-104
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• 2007

$CuInO_2$ 단일상은 합성조건이 매우 까다롭기 때문에 일반적인 고상법으로 얻기 힘든 것으로 알려저 있다. 투명전도성 $CuInO_2$ 박막을 증착하기 위하여 일반적인 고상법으로 Cu와 In의 비율이 1:1인 $Cu_2O-In_2O_3$ composite target 및 In 대신 Ca, Mg, Ti가 각각 1mol% 도핑된 target을 제작하였다. 제작된 각각의 composite target을 이용하여 pulsed laser deposition(PLD) 공정으로 투명전도성 $CuInO_2$ 박막을 증착하였다. Cu와 In이 1:1 인 $Cu_2O-In_2O_3$ composite target을 사용한 경우, 증착된 박막이 Cu와 In의 비율이 1:1인 c-axis 배향된 단일상의 $CuInO_2$ 박막임을 확인하였다.

• Korean Journal of Materials Research
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• v.30 no.2
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• pp.68-73
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• 2020

Due to its favorable optical properties, Cu₂SnS₃ (CTS) is a promising material for thin film solar cells. Doping, which modifies the absorber properties, is one way to improve the conversion efficiency of CTS solar cells. In this work, CTS solar cells with selenium doping were fabricated on a flexible substrate using sputtering method and the effect of doping on the properties of CTS solar cells was investigated. In XRD analysis, a shift in the CTS peaks can be observed due to the doped selenium. XRF analysis confirmed the different ratios of Cu/Sn and (S+Se)/(Cu+Sn) depending on the amount of selenium doping. Selenium doping can help to lower the chemical potential of sulfur. This effectively reduces the point defects of CTS thin films. Overall improved electrical properties were observed in the CTS solar cell with a small amount of selenium doping, and a notable conversion efficiency of 1.02 % was achieved in the CTS solar cell doped with 1 at% of selenium.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.186-186
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• 2013

Nitrogen doped Ge-Sb-Te (N-GST) thin films for phase change random access memory (PRAM) applications were investigated by synchrotron-radiation-based x-ray photoelectron spectroscopy and absorption spectroscopy. Nitrogen doping in GST resulted in more favorable N atoms' bonding with Ge atoms rather than with Sb and Te atoms [1,2], which explains the higher phase change transition temperature than that of undoped Ge-Sb-Te thin film. Surprisingly, it was noticed that N atoms also existed in the form of molecular nitrogen, $N_2$, which is detrimental to the stability of the GST performance [3]. N-doped GST experimental features were also supported by ab-initio molecular dynamic calculations [2]. References [1] M.-C. Jung, Y. M. Lee, H.-D. Kim, M. G. Kim, and H. J. Shin, K. H. Kim, S. A. Song, H. S. Jeong, C. H. Ko, and M. Han, "Ge nitride formation in N-doped amorphous Ge2Sb2Te5", Appl. Phys. Lett. 91, 083514 (2007). [2] Zhimei Sun, Jian Zhou, Hyun-Joon Shin, Andreas Blomqvist, and Rajeev Ahuja, "Stable nitride complex and molecular nitrogen in N doped amorphous Ge2Sb2Te5", Appl. Phys. Lett. 93, 241908 (2008). [3] Kihong Kim, Ju-Chul Park, Jae-Gwan Chung, and Se Ahn Song, Min-Cherl Jung, Young Mi Lee, Hyun-Joon Shin, Bongjin Kuh, Yongho Ha, Jin-Seo Noh, "Observation of molecular nitrogen in N-doped Ge2Sb2Te5", Appl. Phys. Lett. 89, 243520 (2006).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.249-249
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• 2009

We have grown large area BSTO($(Ba_{1-x}Sr_x)TiO_3$) thin films (x=0.4) on 2 inch diameter MgO (001) single crystal substrates using a pulse laser deposition(PLD) system. Substrate temperature and oxygen pressure in the deposition chamber, and the laser optics for ablating a target have been controlled to obtain the uniform thickness and preferred orientation of the films. Results of x-ray diffraction and rocking curve analysis revealed that the BSTO films were grown on MgO substrates with a preferred orientation (002), and the full width half maximum of the rocking curve was measured to be 0.86 degree at optimum condition. Roughness of the films have been measured to be $3.42{\AA}$ rms by using atomic force microscopy. We have successfully deposited the large area BSTO thin films of $4000{\AA}$ thickness on 50 mm diameter MgO substrates.

• Journal of the Korean Electrochemical Society
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• v.18 no.1
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• pp.38-44
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• 2015

This review article summarizes the recent progress of quantum dot (QD)-sensitized solar cells based on mesoporous $TiO_2$ thin films. From the intrinsic characteristics of nanoscale inorganic QDs with various compositions, it was possible to construct a variety of 3rd-generation thin film solar cells by solution process. Depending on preparation methods, colloidal QD sensitizers are pre-prepared for later deposition onto the surface of $TiO_2$ or in-situ deposition of QDs from chemical bath is done for direct growth of QD sensitizers over substrates. Recently, colloidal QD sensitizers have shown an overall power conversion efficiency of ~7% by a very precise control of composition while a representative CdS/CdSe from chemical bath deposition have done ~5% with polysulfide electrolytes. In the near future, it is necessary to carry out systematic investigations for developing new hole-conducting materials and controlling interfaces within the cell, thus leading to an enhancement of both open-circuit voltage and fill factor while keeping the current high value of photocurrents from QDs towards more efficient and stable QD-sensitized solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.05a
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• pp.3-3
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• 2009

In order to investigate the possibility of using mixed rare earth $(Nd_{1/3}Eu_{1/3}Gd_{1/3})Ba_2Cu_3O_{7-x}$ (NEG123) as the superconducting layer of the HTS coated conductor, the NEG123 thin film was deposited epitaxialy on LAO(100) single crystal and IBAD_YSZ metal templates by pulsed laser deposition. Systematic studies were carried out to investigate the influences of deposition parameters of PLD on the micro structure, texture and superconducting properties of NEG-123 coated conductor. Deposition at oxygen partial pressure of 600 mTorr was needed to routinely obtain high quality NEG123 films with $J_c$'s (77K) over 2 MA/$cm^2$ and Tc's over 90K (${\Delta}T{\sim}2\;K$). We verified from magnetization study that the NEG123 has an improved in-field Jc as the field increases at temperatures between 10 K and 77 K compared with Gd123. The $J_c$ (77K, self field) and the value of onset $T_c$ of NEG123 thin film on LAO substrate was $4.0MA/cm^2$ and 92K, respectively. This is the first report, to the best of our knowledge, of coated conductors with NEG123 film as the superconducting layer which have Ic and Jc over 40 A/cm-width and 1.6 MA/$cm^2$ at 77K, self field. This study shows the possibility of using NEG123 film as the superconducting layer of the HTS coated conductor which can be used in high magnetic field power electric devices.