Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Growth and electro-optical characteristics of CdSe/GaAs epilayers prepared by electron beam epitaxy

전자빔 증착법에 의한 CdSe/GaAs epilayer의 성장과 그 전기-광학적 특성

  • Yang, D.I. (Semiconductor Physics Research Center, Jeonbuk National University) ;
  • Shin, Y.J. (Semiconductor Physics Research Center, Jeonbuk National University) ;
  • Lee, C.H. (Semiconductor Physics Research Center, Jeonbuk National University) ;
  • Choi, Y.D. (Department of Physics, Mokwon University) ;
  • Yu, P.R. (Department of Physics, Suncheon National University)
  • 양동익 (전북대학교 반도체물성연구센터) ;
  • 신영진 (전북대학교 반도체물성연구센터) ;
  • 이춘호 (전북대학교 반도체물성연구센터) ;
  • 최용대 (목원대학교 물리학과) ;
  • 유평렬 (순천대학교 물리학과)
  • Published : 1997.02.01
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Abstract

An improved technique based upon an electron beam evaporation system has been developed to prepare cubic thin films In crystalline semiconductors. Zinc blonde CdSe epilayers were grown on GaAs(100) substrate by an e-beam evaporation method. The lattice parameter obtained from (400) reflection is $6.077\AA$, which is in excellent agreement with the value reported in the literature for zinc blonde CdSe. The orientation of the as-grown CdSe epilayer is determined by electron channeling patterns. The crystallinity of epitaxial CdSe layers were investigated on the double crystal X-ray rocking curve. The carrier concentration and mobility of epilayers deduced by Hall effect measurement are about $10^{18}{\textrm}{cm}^{-3}$, $10^2\textrm{cm}^2/V{\cdot}sec$ at room temperature, respectively. The photocurrent spectrum peak of the epilayer at 30 K exhibits a sharp change at 1.746 eV due to the free exciton of cubic CdSe.

Electron beam 증착법을 보완하여 GaAs(100)기판위에 cubic(zinc blende) CdSe 에피충을 성장시켜 그의 특성을 조사하였다 .. CdSe 에피충의 격자 상수는 6.077 A였으며, 배향 성은 ECP 패번에 의하여 확인되고 결정성은 DCXR curve로 관찰하였다. 상온에서 측정된 H Hall data로는 에피충의 운반자 농도와 이통도는 각각 1018cm-3, 102cm2N' see 정도임을 알았 고 30 K에서 측정한 PC spectra peak는 cubic CdSe의 free exciton에 기인된 것으로 1.746 e eV에서 예리하게 나타냐고 있음을 보여주고 있다.

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