• 한국전기전자재료학회논문지
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• 제31권4호
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• pp.203-207
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• 2018

In this work, we investigate the effects of lithium doping on the electric performance of solution-processed n-type zinc tin oxide (ZTO)/p-type silicon carbide (SiC) heterojunction diode structures. The proper amount of lithium doping not only affects the carrier concentration and interface quality but also influences the temperature sensitivity of the series resistance and activation energy. We confirmed that the device characteristics vary with lithium doping at concentrations of 0, 10, and 20 wt%. In particular, the highest rectification ratio of $1.89{\times}107$ and the lowest trap density of $4.829{\times}1,022cm^{-2}$ were observed at 20 wt% of lithium doping. Devices at this doping level showed the best characteristics. As the temperature was increased, the series resistance value decreased. Additionally, the activation energy was observed to change with respect to the component acting on the trap. We have demonstrated that lithium doping is an effective way to obtain a higher performance ZTO-based diode.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.360.2-360.2
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• 2016

CuSn thin films were fabricated by rf magnetron co-sputtering method on the Si(100) substrate for evaluation of the antibacterial effect. The co-sputtering process was performed with different rf powers and sputtering times to regulate the thickness of the films and relative atomic ratio of Cu to Sn. The physicochemical properties of the CuSn thin films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), Optical microscope (OM), 4-point probe, and antibacterial test. An antibacterial test was conducted with Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) as changing contact times between CuSn fillms and bacteria suspension. We compared to the crystalline structures of films before sterilization and after sterilization by XRD measurement. The changes of oxidation states of Cu and Sn and the chemical environment of films before and after antibacterial test were investigated with high resolution XPS spectra in the regions of Cu 2p, Cu LMM, and Sn 3d. After antibacterial test, the morphology of the films was checked with an OM images. The electrical properties of the CuSn films such as surface resistance and conductivity were measured by using 4-point probe.

• 한국진공학회지
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• 제20권1호
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• pp.50-56
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• 2011

본 논문에서는 버퍼막 두께 및 열처리 온도에 따른 ZnO/b-ZnO/p-Si(111) 기반 이종접합 다이오드 전류 특성에 대한 연구가 진행되었고, b-ZnO (ZnO buffer layer) 버퍼막 두께 및 열처리 온도에 따른 p-Si(111) 기판 위에 증착시킨 ZnO 박막의 구조적, 전기적 특성 또한 연구되었다. X-ray diffraction (XRD) 방법을 이용하여 ZnO 박막의 구조적 특성을 측정하였고, semiconductor parameter analyzer를 이용하여 ZnO/b-ZnO/p-Si(111) 이종접합 다이오드의 I-V 특성을 평가하였다. XRD 분석 결과 버퍼막 열처리 온도 $700^{\circ}C$, 버퍼막 두께 70 nm에서 ZnO 박막은 우세한 (002) 방향의 c-축 배향성을 갖는 육방정계(hexagonal wurtize) 결정 구조를 나타내었다. 전기적 특성인 운반자 농도, 비저항 값의 경우에는 버퍼막 열처리 온도 $700^{\circ}C$, 버퍼막 두께 50 nm에서 우수한 전기적 특성(비저항: $2.58{\times}10^{-4}[{\Omega}-cm]$, 운반자 농도: $1.16{\times}10^{20}[cm^{-3}]$)을 보였다. 또한 ZnO/b-ZnO/p-Si(111) 이종접합 다이오드의 전류 특성은 버퍼막 열처리 온도 $700^{\circ}C$에서 버퍼막 두께가 증가할수록 전류 특성이 향상되는 경향을 보였다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.39.2-39.2
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• 2010

In this work we have investigated electrical and optical properties of interface for ITO/Si with shallow doped emitter. The ITO is prepared by DC magnetron sputter on p-type monocrystalline silicon substrate. As an experimental result, The transmittance at 640nm spectra is obtained an average transmittance over 85% in the visible range of the optical spectrum. The energy bandgap of ITO at oxygen flow from 0% to 4% obtained between 3.57eV and 3.68eV (ITO : 3.75eV). The energy bandgap of ITO is depending on the thickness, sturcture and doping concentration. Because the bandgap and position of absorption edge for degenerated semiconductor oxide are determined by two competing mechanism; i) bandgap narrowing due to electron-electron and electron-impurity effects on the valance and conduction bands (> 3.38eV), ii) bandgap widening by the Burstein-Moss effect, a blocking of the lowest states of the conduction band by excess electrons( < 4.15eV). The resistivity of ITO layer obtained about $6{\times}10^{-4}{\Omega}cm$ at 4% of oxygen flow. In case of decrease resistivity of ITO, the carrier concentration and carrier mobility of ITO film will be increased. The contact resistance of ITO/Si with shallow doped emitter was measured by the transmission line method(TLM). As an experimental result, the contact resistance was obtained $0.0705{\Omega}cm^2$ at 2% oxygen flow. It is formed ohmic-contact of interface ITO/Si substrate. The emitter series resistance of ITO/Si with shallow doped emitter was obtained $0.1821{\Omega}cm^2$. Therefore, As an PC1D simulation result, the fill factor of EWT solar cell obtained above 80%. The details will be presented in conference.

• 공업화학
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• 제30권4호
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• pp.499-503
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• 2019

GaInP/GaAs 양자우물(quantum well)구조를 N-AlGaInP/p-GaInP 이종 접합구조 태양전지에 도입하여 그 특성을 조사하고 양자우물구조가 없는 태양전지와 비교하였다. 에피층은 (100)평면이 (111)A 방향으로 $6^{\circ}$ 기울어진 p-GaAs 기판 위에 성장하였다. 태양전지 박막구조는 두께 400 nm의 N-AlGaInP 층에 590 nm의 p-GaInP와 210 nm의 GaInP/GaAs 양자 우물 구조(10 nm GaInP/5 nm GaAs의 14겹 구조)가 도입된 양자우물 태양전지 구조와 800 nm의 p-GaInP의 단일이종접합 구조로 이루어진다. 측정결과 $1{\times}1mm^2$의 태양전지에서 단락전류밀도($J_{sc}$)는 양자우물구조가 도입된 태양전지에서는 $9.61mA/cm^2$, 양자우물 구조가 없는 태양전지에서는 $7.06mA/cm^2$가 각각 측정되었다. 이차이온질량 분석법(SIMS)과 외부양자효율(external quantum efficiency) 측정을 통하여 단락전류 증가에 의한 효율증가가 흡수 스펙트럼의 확대가 아닌 양자우물에 의한 carrier 재결합의 억제에 의한 효과임을 확인하였다.

• Asian-Australasian Journal of Animal Sciences
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• 제26권10호
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• pp.1424-1436
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• 2013

The objective of this study was to investigate the effect of banana flower powder (BAFLOP) supplementation on gas production kinetics and rumen fermentation efficiency in in vitro incubation with different ratios of roughage to concentrate in swamp buffalo and cattle rumen fluid. Two male, rumen fistulated dairy steers and swamp buffaloes were used as rumen fluid donors. The treatments were arranged according to a $2{\times}2{\times}3$ factorial arrangement in a Completely randomized design by using two ratios of roughage to concentrate (R:C; 75:25 and 25:75) and 3 levels of BAFLOP supplementation (0, 2 and 4% of dietary substrate) into two different kinds of rumen fluid (beef cattle and swamp buffalo). Under this investigation, the results revealed that the rumen ecology was affected by R:C ratio. The pH declined as a result of using high concentrate ratio; however, supplementation of BAFLOP could buffer the pH which led to an improvement of ruminal efficiency. BAFLOP supplementation affected acetic acid (C2) when the proportion of concentrate was increased. However, there were no effect on total volatile fatty acid (TVFA) and butyric acid (C4) by BAFLOP supplementation. The microbial community was affected by BAFLOP supplementation, especially the bacterial population. As revealed by real-time PCR, the populations of F. succinogenes and R. albus were reduced by the high concentrate treatments while that of R. flavafaciens were increased. The populations of three dominant cellulolytic bacteria were enhanced by BAFLOP supplementation, especially on high concentrate diet. BAFLOP supplementation did not influence the ammonia nitrogen ($NH_3$-N) concentration, while R:C did. In addition, the in vitro digestibility was improved by either R:C or BAFLOP supplementation. The BAFLOP supplementation showed an effect on gas production kinetics, except for the gas production rate constant for the insoluble fraction (c), while treatments with high concentrate ratio resulted in the highest values. In addition, BAFLOP tended to increase gas production. Based on this study, it could be concluded that R:C had an effect on rumen ecology both in buffalo and cattle rumen fluid and hence, BAFLOP could be used as a rumen buffering agent for enhancing rumen ecology fed on high concentrate diet. It is recommended that level of BAFLOP supplementation should be at 2 to 4% of total dry matter of substrate. However, in vivo trials should be subsequently conducted to investigate the effect of BAFLOP in high concentrate diets on rumen ecology as well as ruminant production.

• 한국미생물·생명공학회지
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• 제37권2호
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• pp.99-104
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• 2009

Streptomyces coelicolor A3(2)의 $\beta$-glucosidase 유전자를 분리하여 대장균에서 발현하여 특성을 조사하였다. 최적 활성을 나타내는 온도는 pH 5에서는 $20^{\circ}C$, pH 6에서는 $60^{\circ}C$에서 높은 활성을 나타냈다. pH에 따른 활성은 pH 3 이하와 pH 9 이상의 범위에서는 낮은 활성을 나타냈으며 pH 7에서 가장 높은 활성을 나타냈다. $\alpha$-pNPG($\rho$-nitrophenyl-$\alpha$-D-glucopyranoside), $\beta$-pNPG ($\rho$-nitrophenyl-$\beta$-D-glucopyranoside), $\beta$-pNPF($\\rho$-nitrophenyl-$\beta$-D-fucopyranoside)는 pH 3-10까지 비슷한 활성을 나타냈으며, $\alpha$-pNPG가 pH 7에서 다소 높은 활성을 보였다. $\beta$-pNPGA는 pH 5-9까지 높은 활성을 나타냈으며, 특히 pH 9에서 3배 이상의 높은 활성을 나타냈다. 기질 $\alpha$-pNPG, $\beta$-pNPG, $\beta$-pNPF의 온도에 따른 활성변화는 $\beta$-pNPF의 활성이 $60^{\circ}C$에서 증가하였고, $\beta$-pNPGA는 $30-50^{\circ}C$까지 활성이 증가하여 $50^{\circ}C$에서 최대활성을 나타내었다. 당화 flavonoid를 이용한 기질특이성의 상대활성은 daidzin, glycitin, genistin, 순으로 나타났으며 esculin과 apigenin-7-glucose는 기질로 사용하지 않았다. $\beta$-Glucosidase 활성은 EDTA, DTT에 의해 억제되었으며, $MnSO_4$, $CaCl_2$, KCl, $MgSO_4$에 의해 증가하였고, 특히 Mn이온에 의해 증가하였다. $CuSO_4$, NaCl에 의해 효소활성이 저해되었으며, 특히 $ZnSO_4$의 경우 효소활성이 강하게 억제되었다.

• 한국축산식품학회지
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• 제27권3호
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• pp.363-370
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• 2007

김치의 L. plantarum의 생균제적 특성을 조사하기 위하여 김치에서 산생산과 성장능력 등이 우수한 25종의 Lactobacillus sp.를 분리하였고, API kit 분석에 의하여 L. plantarum을 동정하고 재차 16S rDNA 염기서열(99.9% 상동성)을 비교한 후 L. plantarum JK-01로 표기하였다. L. plantarum JK-01은 MRS broth에서 배양시 18시간 후 $2.9{\times}10^{10}CFU/ml$로 최대로 증식하는 빠른 성장특성을 나타냈으며 pH도 4.5로 조속히 하강하였다. 효소활성은 xylanase, amylase, protease, phytase의 순으로 높은 활성을 포함하고 있는 것으로 예측되었다. L. plantarum JK-01은 pH 2에서도 $1.36{\times}10^5CFU/mL$가 생존하였고, 1%의 담즙산에서도 약 $10^6CFU/mL$이상이 생존하여 내산성과 내담즙산성이 강한 것으로 나타났다. 또, $60^{\circ}C$에서도 $3.3{\times}10^3$ CFU/mL 정도로 생존하는 내열성이 있었으며, 대장균과 함께 배양시 18시간 후 대장균을 사멸시키는 것으로 나타났다. 이상의 결과로부터 분리한 L. plantarum JK-01은 생균제로서 충분히 이용가치가 있는 것으로 사료되었다.

• 통합자연과학논문집
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• 제5권4호
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• pp.211-215
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• 2012

Single-crystalline silicon nanowire arrays (SiNWAs) using electroless metal-assisted etchings of p-type silicon were successfully fabricated. Ag nanoparticle deposition on silicon wafers in HF solution acted as a localized micro-electrochemical redox reaction process in which both anodic and cathodic process took place simultaneously at the silicon surface to give SiNWAs. The growth effect of SiNWs was investigated by changing of etching times. The morphologies of SiNWAs were obtained by SEM observation. Well-aligned nanowire arrays perpendicular to the surface of the silicon substrate were produced. Optical characteristics of SiNWs were measured by FT-IR spectroscopy and indicated that the surface of SiNWs are terminated with hydrogen. The thicknesses and lengths of SiNWs are typically 150-250 nm and 2 to 5 microns, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.193-196
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• 2001

Single phase $CuInS_2$ thin film with the highest diffraction peak (112) at diffraction angle $(2\theta)$ of $27.7^{\circ}$ and the second highest diffraction peak (220) at diffraction angle $(2\theta)$ of $46.25^{\circ}$ was well made with chalcopyrite structure at substrate temperature of $70^{\circ}C$, annealing temperature of $250^{\circ}C$, annealing time of 60 min. The $CuInS_2$ thin film had the greatest grain size of $1.2{\mu}m$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that $CuInS_2$ thin film was 5.60 A and 11.12 A respectively. Single phase $CuInS_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type $CuInS_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of $CuInS_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type $CuInS_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, $3.0{\times}104cm^{-1}$ and 1.48 eV respectively. When Cu/In composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type $CuInS_2$ thin film was 821 nm, $6.0{\times}10^4cm^{-1}$ and 1.51 eV respectively.