• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.92-95
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• 2005

$Zn_{1-x}\;^{57}Fe_xO(x=0.01, 0.02, 0.03)$ compounds were fabricated using the solid-state reaction method. In order to determine magnetic behavior and ionic state of the doped transition metal ($^{57}Fe$) in ZnO, we carried out $M\ddot{o}ssbauer$ measurements at various temperatures ranging from 13 to 295 K. $M\ddot{o}ssbauer$spectra for $Zn_{0.97}\;^{57}Fe_{0.03}O$ at 4.2 K have shown the ferromagnetic phase (sextet), but the only paramagnetic phase (doublet) is seen at 295 K. The hysteresis loop below 77 K for $Zn_{0.97}\;^{57}Fe_{0.03}O$ indicated the coexistence of ferromagnetic and paramagnetic phases.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.1
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• pp.37-44
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• 2023

Transition metal (Me = Cu, Fe, Ni) doped (Pr, Ba)Co₂O_5+𝛿 (PBCO) material were investigated in terms of electronic structure change and electrochemical properties. It was confirmed that (Pr, Ba)(Co, Cu)O_5+𝛿 (PBCCu) and (Pr, Ba)(Co, Fe)O_5+𝛿 (PBCFe) showed cubic and orthorhombic structures, respectively, but (Pr, Ba)(Co, Ni)O_5+𝛿 (PBCNi) showed secondary phases. PBCCu has an average particle diameter of 1093 nm, and PBCO and PBCFe have an average particle diameter of 495.1 nm and 728 nm, respectively. The average oxidation values of B site ions in PBCMe were calculated to be 3.26 (PBCO), 2.48 (PBCCu), 3.32 (PBCFe), and valence band maximum (VBM) was -0.42 eV (PBCO), -0.58 eV (PBCCu), -0.11 eV (PBCFe). It is expected that PBCCu easily interacts with adsorbed oxygen due to the lowest oxidation value and the highest VBM. The polarization resistance was 0.91 Ω cm² (PBCO), 0.77 Ω cm² (PBCCu), 1.06 Ω cm² (PBCFe) at 600℃, showing the lowest polarization resistance of PBCCu.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.140-140
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• 2009

The Metal-ferroelectric-semiconductor (MFS) structure has superior advantages such as high density integration and non-destructive read-out operation. However, to obtain the desired electrical characteristics of an MFS structure is difficult because of interfacial reactions between ferroelectric thin film and Si substrate. As an alternative solution, the MFS structure with buffer insulating layer, i.e. metal-ferroelectric-insulator-semiconductor (MFIS), has been proposed to improve the interfacial properties. Insulators investigated as a buffer insulator in a MFIS structure, include $Ta_2O_5$, $HfO_2$, and $ZrO_2$ which are mainly high-k dielectrics. In this study, we prepared the Dy-doped $La_2O_3$ solution buffer layer as an insulator. To form a Dy-doped $La_2O_3$ buffer layer, the solution was spin-coated on p-type Si(100) wafer. The coated Dy-doped $La_2O_3$ films were annealed at various temperatures by rapid thermal annealing (RTA). To evaluate electrical properties, Au electrodes were thermally evaporated onto the surface of the samples. Finally, we observed the surface morphology and crystallization quality of the Dy-doped $La_2O_3$ on Si using atomic force microscopy (AFM) and x-ray diffractometer (XRD), respectively. To evaluate electrical properties, the capacitance-voltage (C-V) and current density-voltage (J-V) characteristics of Au/Dy-doped La2O3/Si structure were measured.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.183-183
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• 2014

Recently, multiferroic materials gain much attention due to their fascinating fundamental physical properties. These materials offer wide range of potential applications such as data storage, spintronic devices and sensors, where both electronic and magnetic polarizations can be coupled. Among single-phase multiferroic materials, $BiFeO_3$ is typical because of the room-temperature magnetoelectric coupling in view of long-range magnetic- and ferroelectric-ordering temperatures. However, $BiFeO_3$ is well known to have large leakage current and small spontaneous polarization due to the existence of oxygen vacancies and other defects. Furthermore the magnetic moment of pure $BiFeO_3$ is very weak owing to its antiferromagnetic nature. Recently, various attempts have been performed to improve the multiferroic properties of $BiFeO_3$ through the co-doping at the A and the B sites, by making use of the fact that the intrinsic polarization and magnetization are associated with the lone pair of $Bi^{3+}$ ions at the A sites and the partially-filled 3d orbitals of $Fe^{3+}$ ions at the B sites, respectively. In this study, $BiFeO_3$, $Bi_{0.9}Ho_{0.1}FeO_3$, $BiFe_{0.97}Ni_{0.03}O_3$ and $Bi_{0.9}Ho_{0.1}Fe_{0.97}Ni_{0.03}O_3$ bulk compounds were prepared by solid-state reaction and rapid sintering. High-purity $Bi_2O_3$, $Ho_2O_3$, $Fe_2O_3$ and $NiO_2$ powders with the stoichiometric proportions were mixed, and calcined at $500^{\circ}C$ for 24 h to produce the samples. The samples were immediately put into an oven, which was heated up to $800^{\circ}C$ and sintered in air for 1 h. The crystalline structure of samples was investigated at room temperature by using a Rigaku Miniflex powder diffractometer. The field-dependent and temperature-dependent magnetization measurements were performed with a vibrating-sample magnetometer and superconducting quantum-interference device.

• Journal of the Korean Ceramic Society
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• v.47 no.5
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• pp.457-460
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• 2010

$SmCoO_3$ system was investigated for their application to themoelectric materials. All specimens showed p-type semiconducting behavior and their electrical conductivity ($\sigma$), Seebeck coefficient (S) and power factor were measured at high temperature. And the effect of dopant ions on their thermoelectrical properties were also investigated. $Fe^{3+}$ ion doped into $Co^{3+}$ site enhanced the Seebeck coefficient and decreased the electrical conductivity simultaneously. The maximum Seebeck coefficient value for 60% doping case reached to 780 ${\mu}V$/K at $240^{\circ}C$. However $Fe^{3+}$ doped system cause an negative effect on power factor value. In case of the pure phase, the maximum Seebeck coefficient value reached to 290 ${\mu}V$/K at $240^{\circ}C$ and the maximum electrical conductivity was obtained 748 1/(ohm$\times$cm) at $960^{\circ}C$. As a result, the maximum power factor was obtained $1.49\times10^{-4}$ W/$mK^2$ at $550^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.229-229
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• 2013

저온작동형($500{\sim}700^{\circ}$) 고체산화물 연료전지의 전해질 재료의 응용이 기대되는 Gd doped ceria를 고주파 유도결합 열플라즈마 법으로 합성하고 그 특성을 조사하였다. 본 연구에서는 나노 ㄴCeO2 10~100 um의 CeO2와 1~20 um의 Gd2O3를 Ce：Gd이 9:1 mol%와 8:2 mol%의 비율로 혼합한 선구체를 140 kVA의 RF plate power와 O2/Ar 플라즈마 생성 가스 조건에서 형성된 고주파 유도결합 열 플라즈마에 주입하여 ~50 nm 이하의 입도와 fluorite 구조의 결정화된 CeO2 구조를 갖는 Gd doped ceria 나노 분말을 합성하였다. FE-SEM, TEM, XRD, ICP-OES, EDS, BET분석법을 이용하여, 합성된 분말의 입도, 미세구조, 결정 구조, 조성, 표면 등의 특성을 관찰하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.658-666
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• 2000

Sb and Sb-Fe doped SnO$_2$film resistors were prepared by spray pyrolysis technique. The effects of Sb and Sb-Fe addition on TCR and electrical properties of SnO$_2$film resistors were studied. Also the dependence of electrical properties on the substrate temperature and substrate-nozzle distance was investigated. The Sn-Sb system with 7.9 mol% SbCl$_3$(STO-406) and Sn-Sb-Fe systems with 7.3 mol% SbCl$_3$+7.3 mol% FeCl$_3$(STO-407) and with 3.4 mol% SbCl$_3$+7.7mol% FeCl$_3$(STO-408) were prepared. Both of the systems Sn-Sb and Sn-Sb-Fe represented nonlinearity of TCR with temperature. As the amount of Fe increased TCR was shifted to positive direction. Decreasing Sb or increasing Fe caused resistivity to increase. Also increasing Fe caused the crystallization degree of rutile structure in SnO$_2$film to decrease. The electrical resistivity decreased with increasing substrate temperature The resistivity decreased with increasing substrate-nozzle distance in the ranges from 15 to 25 cm and increased rapidly at the distance over 25cm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.760-765
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• 2009

The effects of $Fe_2O_3$ addition on optical and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. Doped MgO films prepared by the e-beam evaporation have a higher ${\gamma}$ (secondary electron emission coefficient) than pure MgO protective layer. Roughness increased with amount of $Fe_2O_3$ up to 100 ppm and then decreased further addition. These results showed that discharge properties and optical properties of MgO protective layers seemed to be closely related with microstructure factors such as roughness. Good optical and electrical properties of ${\gamma}$ of 0.120, surface roughness of 14.1 nm and optical transmittance of 94.55% were obtained for the MgO + 100 ppm $Fe_2O_3$ protective layer sintered at $1700^{\circ}C$ for 5 hrs.

• Journal of the Korean institute of surface engineering
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• v.34 no.2
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• pp.89-96
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• 2001

N- or O-doped STS304 stainless films were synthesized by an unbalanced magnetron sputtering process with various argon and reactive gas ($N_2$, $O_2$) mixtures. These films were examined by scanning electron microscopy (SEM), X-ray diffraction (XRD), Auger electron spectroscopy (AES) and Knoop microhardness tester. The Results from X-ray diffraction (XRD) analysis showed that a STS304 stainless steel film synthesized without reactive gas using a bulk STS304 stainless steel target had a ferrite bcc structure ($\alpha$ phase), while the N-doped STS304 stainless film was consisted of a nitrogen supersaturated fcc structure, which hsa a strong ${\gamma}$(200) phase. In the O-doped films, oxide Phases ($Fe_2$$O_3$ and $Cr_2$$O_3$) were observed from the films synthesized under an excess $O_2$ flow rate of 9sccm. AES analysis showed that nitrogen content in N-doped films increased as the nitrogen flow rate increased. Approximately 43 at.%N in the N-doped film was measured using a nitrogen flow rate of 8sccm. In O-doped film, approximately 15 at.%O was detected using a $O_2$ flow rate of 12sccm. the Knoop microhardness value of N-doped film using a nitrogen flow rate of 8 sccm was measured to be approximately $H_{ k}$ 1200 and this high value could be attributed to the fine grain size and increased residual stress in the N-doped film.

• Korean Journal of Materials Research
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• v.21 no.1
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• pp.67-71
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• 2011

La doped CuO-ZnO-$Al_2O_3$ powders are prepared by sol-gel method with aluminum isopropoxide and primary distilled water as precursor and solvent. In this synthesized process, the obtained metal oxides caused the precursor such as copper (II) nitrate hydrate and zinc (II) nitrate hexahydrate were added. To improve the surface areas of La doped CuO-ZnO-$Al_2O_3$ powder, sorbitan (z)-mono-9-octadecenoate (Span 80) was added. The synthesized powder was calcined at various temperatures. The dopant was found to affect the surface area and particle size of the mixed oxide, in conjunction with the calcined temperature. The structural analysis and textual properties of the synthesized powder were measured with an X-ray Diffractometer (XRD), a Field-Emission Scanning Electron Microscope (FE-SEM), Bruner-Emmett-Teller surface analysis (BET), Thermogravimetry-Differential Thermal analysis (TG/DTA), $^{27}Al$ solid state Nuclear Magnetic Resonance (NMR) and transform infrared microspectroscopy (FT-IR). An increase of surface area with Span 80 was observed on La doped CuO-ZnO-$Al_2O_3$ powders from $25m^2$/g to $41m^2$/g.