A study on the formation and removal of residue and damaged layer on the overched silicon surface during the contact oxide etching using $C_4$ F$_8$ /H$_2$ helicon were plasmas
(C$_4$ F$_8$ /H$_2$ helicon were 플라즈마를 이용한 contact 산화막 식각 공정시 과식화된 실리콘 표면의 잔류막과 손상층 형성 및 이의 제거에 관항 연구)
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- Journal of the Korean institute of surface engineering
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- v.31 no.2
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- pp.117-126
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- 1998