• 한국재료학회지
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• 제8권11호
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• pp.999-1004
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• 1998

$SrAl_2O_4$:$Eu^{2+}, Dy^{3+}$ 축광성 형광체의 합성에 있어서 $B_2O_3$는 일반적으로 고상반응의 촉진을 위한 플럭스로서 첨가된다. 본 연구에서는 플럭스로 첨가되는 $B_2O_3$가 $SrAl_2O_4$:$Eu^{2+}, Dy^{3+}$ 형광체의 결정구조 및 잔광 특성에 미치는 영향을 조사하였다. 합성된 $SrAl_2O_4$:$Eu^{2+}, Dy^{3+}$ 형광체는 520nm에서 최대 피크를 갖는 폭넓은 발광 스펙트럼을 나타내었고, $B_2O_3$ 첨가량의 5wt%일 때 최대값을 나타내었다. $B_2O_3$의 첨가에 의해 $SrAl_2O_4$:$Eu^{2+}, Dy^{3+}$ 결정 내부에는 균일 변형(uniform strain)이 발생하였고 이 결과로 결정격자의 a축과 c축의 길이 및 $\beta$각이 감소하여다. 그리고 $SrAl_2O_4$ 결정내부의 균일 변형은 $Eu^{2+}$이온의 여기과정에서 발생하는 정공(hole)의 포획 사이트인 음이온 결함(negative defect)을 다량 발생시키는 원인이 되고, 결과적으로 $SrAl_2O_4$:$Eu^{2+}, Dy^{3+}$ 결정의 잔광 특성을 향상시키는 것으로 생각되었다.

• Korean Chemical Engineering Research
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• 제43권1호
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• pp.80-84
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• 2005

초음파 분무 열분해 공정에 의해 나노 크기의 $Y_2O_3:Eu$ 형광체 분말들을 합성하였다. 고분자 전구체와 융제로 사용되어진 리튬 탄산염이 나노 크기의 $Y_2O_3:Eu$ 형광체의 형태 및 발광 특성에 미치는 영향에 대해 조사하였다. 고분자 전구체와 융제를 동시에 사용했을 때 분무 열분해 공정에 의해 제조된 구형의 마이크론 크기의 분말들은 고온의 후열처리 과정에서 나노 크기의 분말로 전환되었다. $Y_2O_3:Eu$ 형광체의 평균 크기는 분무용액에 첨가되어지는 고분자 전구체와 융제인 리튬 탄산염의 첨가량 및 분무 열분해 공정의 반응기 온도에 많은 영향을 받았다. 고농도의 고분자 전구체를 함유한 분무용액으로부터 고온의 반응기에서 합성되고, $1,000^{\circ}C$ 이상에서 후열처리한 나노크기 $Y_2O_3:Eu$ 분말들은 진공자외선 하에서 좋은 발광 특성을 나타내었으며, 고상 공정에 의해 합성된 상용의 $Y_2O_3:Eu$ 형광체와 비슷한 발광 세기를 가졌다.

• 한국재료학회지
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• 제27권2호
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• pp.100-106
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• 2017

Nanosized and aggregated $Y_2O_3:Eu$ Red phosphors were prepared by template method from metal salt impregnated into crystalline cellulose. The particle size and photoluminescent property of $Y_2O_3:Eu$ red phosphors were controlled by variation of the calcination temperature and time. Dispersed nanosol was also obtained from the aggregated $Y_2O_3:Eu$ Red phosphor under bead mill wet process. The dispersion property of the $Y_2O_3:Eu$ nanosol was optimized by controlling the bead size, bead content ratio and milling time. The median particle size ($D_{50}$) of $Y_2O_3:Eu$ nanosol was found to be around 100 nm, and to be below 90 nm after centrifuging. In spite of the low photoluminescent properties of $Y_2O_3:Eu$ nanosol, it was observed that the photoluminescent property recovered after re-calcination. The dispersion and photoluminescent properties of $Y_2O_3:Eu$ nanosol were investigated using a particle size analyzer, FE-SEM, and a fluorescence spectrometer.

• 한국세라믹학회지
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• 제35권8호
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• pp.801-806
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• 1998

$Eu^{3+}$ -doped $Y_2$$O_3$ phosphors has been prepared by a polymerized complex method and investigated their powder and luminescence properties. They were compared with phosphors prepared by a solid state reac-thion method. The phosphors synthesized have been characterized by X-ray diffraction low-voltage lu-minescent emission spectroscopy etc. Under low-voltage electron excitation $Eu^{3+}$-doped $Y_2$$O_3$ exhibited a strong narrow-band red emission peaking at 612nm. On the other hand the critical value for concentration quenching of sample prepared by the polymerized complex method fired at $1400^{\circ}C$ is x=0.05 for $(Y_{1-x}Eu_x__2O_3$ The emission intensity of phosphors prepared by the polymerized complex method was higher than that of phosphors prepared by the solid state reaction method.

• 한국재료학회지
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• 제8권8호
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• pp.737-743
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• 1998

$SrAI_2O_4:Eu^{2+}$를 합성하여 장잔광 축광재료로서 가장 중요한 발광특성과 장잔광특성을 조사하였다. 융제로서 $B_2O_3$를 3wt% 첨가한 $SrCO_3$, $Eu_2O_3$, $AI_2O_34의 혼합분말은 $1000^{\circ}C$이상에서 모체결정인 $SrAl_2O_4$의 단일상이 형성되었으나, 장잔관 형광체로서 최적의 합성조건은 $1300^{\circ}C$, 3시간이었다. 그리고 $SrAI_2O_4:Eu^{2+}$는 부활제인 $Eu^{2+}$의 $4f^65d^1$ $\rightarrow$$4f^7$천이에 기인하여 황록색발광영역의 520nm(2.384eV)를 최대 발파장으로 하는 450~650nm의 폭넓은 발광스펙트럼을 보였으며, 또한 발광파장을 520nm로 고정하여 측정한 여기스펙트럼의 최대 흡수피크는 360nm이고 250nm에서 480nm의 넓은 범위에서 흡수스펙트럼이 관찰되었다.

• 한국재료학회지
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• 제24권12호
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• pp.658-662
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• 2014

$Eu^{2+}/Dy^{3+}$-doped $Sr_2MgSi_2O_7$ powders were synthesized using a solid-state reaction method with flux ($NH_4Cl$). The broad photoluminescence (PL) excitation spectra of $Sr_2MgSi_2O_7:Eu^{2+}$ were assigned to the $4f^7-4f^65d$ transition of the $Eu^{2+}$ ions, showing strong intensities in the range of 375 to 425 nm. A single emission band was observed at 470 nm, which was the result of two overlapping subbands at 468 and 507 nm owing to Eu(I) and Eu(II) sites. The strongest emission intensity of $Sr_2MgSi_2O_7:Eu^{2+}$ was obtained at the Eu concentration of 3 mol%. This concentration quenching mechanism was attributable to dipole-dipole interaction. The $Ba^{2+}$ substitution for $Sr^{2+}$ caused a blue-shift of the emission band; this behavior was discussed by considering the differences in ionic size and covalence between $Ba^{2+}$ and $Sr^{2+}$. The effects of the Eu/Dy ratios on the phosphorescence of $Sr_2MgSi_2O_7:Eu^{2+}/Dy^{3+}$ were investigated by measuring the decay time; the longest afterglow was obtained for $0.01Eu^{2+}/0.03Dy^{3+}$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1338-1342
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• 2005

We have synthesized an $Eu^{2+}$-activated $Sr_3MgSi_2O_8$ blue phosphor and $Ba_2SiO_4$ green phosphor and $Ba^{2+}$ co-doped $Sr_3SiO_5$ red phosphor investigated an attempt to develop white LEDs by combining it with a GaN blue LED $chip(\lambda_{em}=405 nm)$. Three distinct emission bands from the GaN-based LED and the $(Sr_3MgSi_2O_8:Eu\; +\; Ba_2SiO_4:Eu\; +\; Ba^{2+}\; co-doped\; Sr_3SiO_5:Eu)$ phosphor are clearly observed at 460nm, 520 nm and at around 600 nm, respectively. These three emission bands combine to give a spectrum that appears white to the naked eye. Our results show that GaN (405 nm chip)-based $(Sr_3MgSi_2O_8:Eu\; +\; Ba_2SiO_4:Eu\; +\; Ba^{2+}\; co-doped\; Sr_3SiO_5:Eu) exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.

• 한국전기전자재료학회논문지
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• 제20권8호
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• pp.671-679
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• 2007

[ $SrAl_2O_4:Eu^{2+},\;Dy^{3+}$ ] phosphor was synthesized using the impregnation method, and its photoluminescence and long-afterglow properties were investigated, A mixture of $Sr(NO_3)_2,\;Al(NO_3)_2\;9H_2O,\;EuCl_3\;6H_2O,\;DyCl_3\;6H_2O,\;NdCl_3\;6H_2O$ salts were dissolved in distilled water and impregnating into the polymer precursor. After drying, the impregnated mixture was heat treated at $900-1400^{\circ}C$ for 2h in a $N_2-H_2$ reduction atmosphere. The microstructure and crystal structure of the $SrAl_2O_4:Eu^{2+},\;Dy^{3+}$ powders were examined by scanning electron microscopy and X-ray diffraction, respectively. The photoluminescence spectra showed an excitation band along over wide wavelength of 250-450nm, and a broaden emission with a maxima peak at 360nm. In addition, the spectra also showed a good long after glow that decayed over a 1000sec period after 10 min excitation illumination.

• 한국분말재료학회지
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• 제27권2호
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• pp.146-153
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• 2020

The co-doping effect of aliovalent metal ions such as Mg²⁺, Ca²⁺, Sr²⁺, Ba²⁺, and Zn²⁺ on the photoluminescence of the Y₂O₃:Eu³⁺ red phosphor, prepared by spray pyrolysis, is analyzed. Mg²⁺ metal doping is found to be helpful for enhancing the luminescence of Y₂O₃:Eu³⁺. When comparing the luminescence intensity at the optimum doping level of each Mg²⁺ ion, the emission enhancement shows the order of Zn²⁺ ≈ Ba²⁺ > Ca²⁺ > Sr³⁺ > Mg²⁺. The highest emission occurs when doping approximately 1.3% Zn²⁺, which is approximately 127% of the luminescence intensity of pure Y₂O₃:Eu³⁺. The highest emission was about 127% of the luminescence intensity of pure Y₂O₃:Eu³⁺ when doping about 1.3% Zn²⁺. It is determined that the reason (Y, M)₂O₃:Eu³⁺ has improved luminescence compared to that of Y₂O₃:Eu³⁺ is because the crystallinity of the matrix is improved and the non-luminous defects are reduced, even though local lattice strain is formed by the doping of aliovalent metal. Further improvement of the luminescence is achieved while reducing the particle size by using Li₂CO₃ as a flux with organic additives.

• 한국표면공학회지
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• 제54권2호
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• pp.96-101
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• 2021

NaNbO₃:Eu³⁺ phosphor thin films were grown on quartz substrates by radio-frequency magnetron sputtering at a growth temperature of 100 ℃, with subsequent annealing at temperatures of 800, 900, and 1000 ℃. The effects of annealing temperature on the structural, morphological, and optical properties of the thin films were investigated. The NaNbO₃:Eu³⁺ sputtering target was synthesized by a solid-state reaction of raw materials Na₂CO₃, Nb₂O₅, and Eu₂O₃. The X-ray diffraction patterns exhibited that the thin films had two mixed phases of NaNbO₃ and Eu₂O₃. Surface morphologies were investigated by using field emission-scanning electron microscopy and indicated that the grains of the thin film annealed at 1000 ℃ showed irregular shapes with an average size of approximately 300 nm. The excitation spectra of Eu³⁺-doped NaNbO₃ thin film consisted of a strong charge transfer band centered at 304 nm in the range of 240-350 nm and two weak peaks at 395 and 462 nm, respectively, resulting from the ⁷F₀→⁵L₆ and ⁷F₀→⁵H₂ transitions of Eu³⁺ ions. The emission spectra under excitation at 304 nm exhibited an intense red band centered at 614 nm and two weak bands at 592 and 681 nm. As the annealing temperature increased from 800 ℃ to 1000 ℃, the intensities of all the emission bands and the band gap energies gradually increased. These results indicate that the higher annealing temperature enhance the luminescent properties of NaNbO₃:Eu³⁺ thin films.