Effect of Annealing Temperature on the Properties of NaNbO3:Eu3+ Phosphor Thin Films Deposited on Quartz Substrates

NaNbO₃:Eu³⁺ phosphor thin films were grown on quartz substrates by radio-frequency magnetron sputtering at a growth temperature of 100 ℃, with subsequent annealing at temperatures of 800, 900, and 1000 ℃. The effects of annealing temperature on the structural, morphological, and optical properties of the thin films were investigated. The NaNbO₃:Eu³⁺ sputtering target was synthesized by a solid-state reaction of raw materials Na₂CO₃, Nb₂O₅, and Eu₂O₃. The X-ray diffraction patterns exhibited that the thin films had two mixed phases of NaNbO₃ and Eu₂O₃. Surface morphologies were investigated by using field emission-scanning electron microscopy and indicated that the grains of the thin film annealed at 1000 ℃ showed irregular shapes with an average size of approximately 300 nm. The excitation spectra of Eu³⁺-doped NaNbO₃ thin film consisted of a strong charge transfer band centered at 304 nm in the range of 240-350 nm and two weak peaks at 395 and 462 nm, respectively, resulting from the ⁷F₀→⁵L₆ and ⁷F₀→⁵H₂ transitions of Eu³⁺ ions. The emission spectra under excitation at 304 nm exhibited an intense red band centered at 614 nm and two weak bands at 592 and 681 nm. As the annealing temperature increased from 800 ℃ to 1000 ℃, the intensities of all the emission bands and the band gap energies gradually increased. These results indicate that the higher annealing temperature enhance the luminescent properties of NaNbO₃:Eu³⁺ thin films.

석영 기판 위에 증착된 NaNbO3:Eu3+ 형광체 박막의 특성에 열처리 온도가 미치는 영향