• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.108.2-108
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• 2002

• Journal of the Korean Electrochemical Society
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• v.15 no.3
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• pp.149-153
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• 2012

The $Cu_2O/TiO_2$ inverse opal heterojunction arrays were developed by electrochemical deposition of $Cu_2O$ nanoparticles on $TiO_2$ inverse opal arrays. The $Cu_2O$ nanoparticles completely filled the inner pores of $TiO_2$ inverse opal film (prepared by liquid phase deposition with an average thickness of 400 nm) and covered the entire area; exhibiting high crystalline properties of anatase and cubic phase from $TiO_2$ and $Cu_2O$, respectively. From asymmetric current-voltage profile, it was noticeable that a heterojunction was well formed for charge transport from $Cu_2O$ to $TiO_2$ film resulting from the enhanced charge separation yield. In addition, increased photocurrent of 0.19 $mA/cm^2$ (versus 0.08 $mA/cm^2$ under dark condition) was obtained at -0.35 V from the heterojunction structure in the 0.5M $Na_2SO_4$ solution.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.9
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• pp.1599-1605
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• 2008

The research was conducted in order to improve the hydrogen generation efficiency of the electrical plasma technology from tap water by using $TiO_2$ photocatalyst, mixed Cu - $TiO_2$ powder, and mixed Ni - $TiO_2$ powder as the catalysts. Experiments were performed with the pulsed power and nitrogen carrier gas. The result has shown that the hydrogen concentration with the presence of $TiO_2$ powder was created higher than that of without using photocatalyst. The hydrogen concentration with using $TiO_2$ was 3012ppm corresponding to the applied voltage of 16kV, while it without using the $TiO_2$ was 1464ppm at the same condition . The effect of $TiO_2$ powder was strongly detected at the applied voltages of 15kV and 16kV. This phenomena might be resulted from the co-effect of the pulsed power discharge and the activated state of $TiO_2$ photocatalyst. The co-effect of the mixed catalysts such as Cu-$TiO_2$ and Ni-$TiO_2$ (the mixed photocatalyst $TiO_2$ and transition metals) were also investigated. The experimental results showed that, Cu and Ni powder dopants were greatly enhancing the activity of the $TiO_2$ photocatalyst. Under these experimental conditions the extremely high hydrogen concentrations at the optimal point were produced as 4089ppm and 6630ppm, respectively.

• Journal of Powder Materials
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• v.10 no.2
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• pp.136-141
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• 2003

In the present study, $TiO_2$ imbedded copper matrix powders have been successfully prepared from the ($CuSO_4+TiO_2+Zn$) composite salt solution. The composite $Cu/TiO_2$ powders were formed by drying the solution at $200{\sim}~400^{\circ}C$ in the hydrogen atmosphere. Photocatalytic characteristics was evaluated by detecting TOC (total organic carbon) amount with TOC analyzer (model 5000A Shimadzu Co). Phase analysis of $Cu/TiO_2$ composite powders was carried out by XRD, DSC and powder size was measured with TEM. The mean particle size of composite powders was about 100 nm and a few zinc and copper oxide phases was included. The reduction ratio of TOC amount was 60% by the composite $Cu/TiO_2$ powders under the UV irradiation for 8 hours.

• Bulletin of the Korean Chemical Society
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• v.22 no.12
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• pp.1371-1374
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• 2001

Metal doping was adopted to modify TiO2 (P-25) and enhance the photocatalytic degradation of harmful cyanides in aqueous solution. Ni, Cu, Co, and Ag doped TiO2 were found to be active photocatalysts for UV light induced degradation of aqueous cyanides generating cyanate, nitrate and ammonia as main nitrogen-containing products. The photoactivity of Ni doped TiO2 was greatly affected by the state of Ni, that is, the crystal size and the degree of reduction of Ni. The modification effects of some mixed oxides, that is, Ni-Cu/TiO2 were also studied. The activity of Ni-Cu/TiO2 for any ratio of Cu/Ni was higher than that of Ni- or Cu-doped TiO2, and the catalyst at the Cu/Ni ratio of 0.3 showed the highest activity for cyanide conversion.

• Journal of Korean Society of Environmental Engineers
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• v.22 no.3
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• pp.511-521
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• 2000

Investigation was carried out lean burn de-NOx properties of Pt-$TiO_2$ bifunctional catalyst by propylene in order to get the high de-NOx activity and the wide temperature window under coexistence of $SO_2$ and $H_2O$. Only noncatalyst and carrier catalyst themselves had NOx conversion activity at high temperature over $400^{\circ}C$. NOx conversion activity of catalysts exchanged copper ion resulted in Cu-$TiO_2$>Cu-ZSM-5>Cu-$Al_2O_3$>CU-YZ>Cu-AZ. Catalysts impregnated with platinum based on titania gave the results of high NOx conversion activity at low temperature. $250^{\circ}C$. Bifunctional catalysts based on Pt-$TiO_2$ showed high NOx conversion activity both at a low zone of $300^{\circ}C$ and a high zone of $500^{\circ}C$. Pt-$TiO_2$/$Al_2O_3$ catalyst gave the highest NOx conversion activity at a low temperature zone. and Pt-$TiO_2$/$Mn_2O_3$(21) catalyst gave the highest NOx conversion activity at a high temperature zone. Under the coexistence of $SO_2$ and $H_2O$. NOx conversion activities of 0.55wt%Pt-$TiO_2$/5wt%Cu-ZSM-5 catalyst was high both at a low and high temperature zone, and increased depending on oxygen concentration. 0.55wt%Pt-$TiO_2$/5wt%Cu-ZSM-5 catalyst showed the best correlation between de-NOx activities and the propyl ere conversion rates to CO on the log function.

• Journal of the Korean Vacuum Society
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• v.5 no.2
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• pp.147-155
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• 1996

Optical properties of $TiO_2/M/Ag/M/TiO_2$ films have been changed with the diffusion barrier metal M. Optimum opticla properties of $TiO_2/M/Ag/M/TiO_2$ as the transparent heat mirror film, could be obtained with Ti among diffusion barrier metals of Ti, Cu, Zr and Al. $TiO_2/M/Ag/M/TiO_2$ film, which was fabricated by sputtering of 18 nm-thick $TiO_2$ and Ag, and 4nm-thick Ti, showed maximum transimittance of 89% at visible wavelength and infrared reflectance of 97% at wavelength of 3000 nm. Optical properties of this film was not degraded by Xenon-sunshine weather test for 240 hours. For specimens with barrier layers of Cu, Zr, and Al, degradation of optical properties by weather test was increased in a sequence of films with Cu, Zr, and Al barrier layers.

• Korean Journal of Materials Research
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• v.17 no.9
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• pp.484-488
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• 2007

Mo(Ti) alloy and pure Cu thin films were subsequently deposited on $SiO_2-coated$ Si wafers, resulting in $Cu/Mo(Ti)/SiO_2$ structures. The multi-structures have been annealed in vacuum at $100-600^{\circ}C$ for 30 min to investigate the outdiffusion of Ti to Cu surface. Annealing at high temperature allowed the outdiffusion of Ti from the Mo(Ti) alloy underlayer to the Cu surface and then forming $TiO_2$ on the surface, which protected the Cu surface against $SiH_4＋NH_3$ plasma during the deposition of $Si_3N_4$ on Cu. The formation of $TiO_2$ layer on the Cu surface was a strong function of annealing temperature and Ti concentration in Mo(Ti) underlayer. Significant outdiffusion of Ti started to occur at $400^{\circ}C$ when the Ti concentration in Mo(Ti) alloy was higher than 60 at.%. This resulted in the formation of $TiO_2/Cu/Mo(Ti)\;alloy/SiO_2$ structures. We have employed the as-deposited Cu/Mo(Ti) alloy and the $500^{\circ}C-annealed$ Cu/Mo(Ti) alloy as gate electrodes to fabricate TFT devices, and then measured the electrical characteristics. The $500^{\circ}C$ annealed Cu/Mo($Ti{\geq}60at.%$) gate electrode TFT showed the excellent electrical characteristics ($mobility\;=\;0.488\;-\;0.505\;cm^2/Vs$, on/off $ratio\;=\;2{\times}10^5-1.85{\times}10^6$, subthreshold = 0.733.1.13 V/decade), indicating that the use of Ti-rich($Ti{\geq}60at.%$) alloy underlayer effectively passivated the Cu surface as a result of the formation of $TiO_2$ on the Cu grain boundaries.

• Korean Journal of Materials Research
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• v.12 no.11
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• pp.889-893
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• 2002

The reactions of $Cu/Ti/SiO_2$ structures at temperatures ranging from 200 to $700^{\circ}C$ have been studied for various Ti thicknesses. The reaction products initially formed, at around $300^{\circ}C$, were a series of Cu-Ti intermetallics ($Cu_3$Ti/CuTi) with the oxygen dissolved in the Ti moving from the compounds into the remaining unreacted Ti. At $500^{\circ}C$, the $Cu_3$Ti was converted into Cu-rich intermetallics, $Cu_4$Ti, which grew at the expense of the CuTi due to the increased oxygen content in the Ti. In addition, the outdiffusion of Ti, to the Cu surface, and the $Ti-SiO_2$ reactions, caused an abrupt increase in the oxygen content in the Ti layer, which placed thermodynamic restraints on further Ti reactions. Furthermore, thinner Ti layers showed a higher increasing rate of oxygen accumulation for the same consumption of Ti, which led to significantly reduced Ti consumption. The $SiO_2$ film under the Ti diffusion barrier was more easily destroyed with increasing Ti thickness.

• Korean Journal of Optics and Photonics
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• v.17 no.1
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• pp.104-109
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• 2006

Cu-doped $TiO_2$ thin films were prepared by RF magnetron co-sputtering, and their structural, optical and photodegradation. properties were examined as a function of calcination temperature. XRD results showed that the crystallite size of Cu/$TiO_2$ thin films was bigger than that of the pure $TiO_2$ thin films. SEM results revealed that the agglomerated particle size of the Cu/$TiO_2$ films was more uniform and smaller than that of pure $TiO_2$ films. The absorption edge of thin films calcined at $900^{\circ}C$ was red shifted, resulting from the phase transformation from anatase to rutile phase, and the transmittance of the thin film rapidly decreased due to an increase in particle size. The photodegradation properties of the Cu/$TiO_2$ thin films were superior to those of the pure $TiO_2$ thin films.