• 한국재료학회지
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• 제24권8호
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• pp.423-428
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• 2014

We synthesized Fe-doped $TiO_2/{\alpha}-Fe_2O_3$ core-shell nanowires(NWs) by means of a co-electrospinning method and demonstrated their magnetic properties. To investigate the structural, morphological, chemical, and magnetic properties of the samples, X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy were used, as was a vibrating sample magnetometer. The morphology of the nanostructures obtained after calcination at $500^{\circ}C$ exhibited core/shell NWs consisting of $TiO_2$ in the core region and ${\alpha}-Fe_2O_3$ in the shell region. In addition, the XPS results confirmed the formation of Fe-doped $TiO_2$ by the doping effect of $Fe^{3+}$ ions into the $TiO_2$ lattice, which can affect the ferromagnetic properties in the core region. For comparison, pure ${\alpha}-Fe_2O_3$ NWs were also fabricated using an electrospinning method. With regard to the magnetic properties, the Fe-doped $TiO_2/{\alpha}-Fe_2O_3$ core-shell NWs exhibited improved saturation magnetization(Ms) of approximately ~2.96 emu/g, which is approximately 6.1 times larger than that of pure ${\alpha}-Fe_2O_3$ NWs. The performance enhancement can be explained by three main mechanisms: the doping effect of Fe ions into the $TiO_2$ lattice, the size effect of the $Fe_2O3_$ nanoparticles, and the structural effect of the core-shell nanostructures.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권1호
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• pp.80-84
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• 2008

We systematically investigated the resistive switching properties of thin $TiO_2$ films on Pt/Ti/$SiO_2$/Si substrates that were embedded with a Co ultra thin layer. An in-situ sputtering technique was used to grow both films without breaking the chamber vacuum. A stable bipolar switching in the current-voltage curve was clearly observed in $TiO_2$ films with an embedded Co ultra thin layer, addressing the high and low resistive state under a bias voltage sweep. We propose that the underlying origin involved in the bipolar switching may be attributed to the interface redox reaction between the Co and $TiO_2$ layers. The improved reproducible switching properties of our novel structures under forward and reverse bias stresses demonstrated the possibility of future non-volatile memory elements in a simple capacitive-like structure.

• 센서학회지
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• 제32권4호
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• pp.238-245
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• 2023

0.75(Bi_1/2Na_1/2)TiO₃-0.25SrTiO₃ (BNT-25ST) ceramics with high densities were successfully prepared at a sintering temperature of 1,000℃ by adding a mixture of 1 mol% CuO and 0.5 mol% Na₂CO₃ or 0.5 mol% CuO and 0.25 mol% Na₂CO₃. Double polarization-electric field (P-E) hysteresis curves and sprout-shaped bipolar strain-electric field (S-E) hysteresis curves with small negative strains were observed in the pristine and CuO-added BNT-25ST ceramics whereas the Na₂CO₃-added sample showed similar P-E and S-E curves to a typical ferroelectric. The pristine BNT-25ST ceramics showed an extremely large strain and a large-signal piezoelectric strain constant (d₃₃^*): 0.287 % at 80 kV/cm and 850 pm/V at 20 kV/cm. Similar values, 0.248 % at 80 kV/cm and 655 pm/V at 20 kV/cm, were obtained in the CuO-added sample. However, the pristine and CuO-added samples showed large hysteresis in unipolar S-E curves at an electric field of less than 20 kV/cm. The Na₂CO₃-added sample showed smaller values of the strain and d₃₃^* but displayed a linear change and small hysteresis in the unipolar S-E curve. The co-added sample with CuO and Na₂CO₃ displayed intermediate P-E and S-E hysteresis curves.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1997년도 한국재료학회 추계학술발표회
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• pp.141-141
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• 1997

• Carbon letters
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• 제10권2호
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• pp.123-130
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• 2009

Multi-elements doped $TiO_2$ was prepared as a new photocatalyst in order to decrease the band gap of $TiO_2$ by sol-gel process which can provide the large active sites of $TiO_2$. Multi-elements were doped by using a single precursor, tetraethylammonium tetrafluoroborate (TEATFB). By the benefit of large specific surface area of $TiO_2$ prepared by sol-gel process, catalysts showed initial fast removal of dye. The photoactivity showed that the doped catalysts significantly promote the light reactivity than undoped $TiO_2$. The commendable photoactivity of prepared catalysts is predominantly attributable to the doping of anions which may reduce the band gap.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.5-8
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• 2004

전자빔 증착법 (e-beam evaporation)를 이용하여 $TiO_2$ 박막과 $Al_2O_3/TiO_2$ 이중박막을 제조한 후, $800^{\circ}C$ 공기 중에서 열처리하여, 알루미나 층의 유무에 따른 두 박막의 전기전도 특성과 100 ppm CO 가스에 대한 반응 특성을 고찰하였다. 알루미나 층이 증착되지 않은 순수한 $TiO_2$ 박막의 전기 전도도 (in dry air)는 $100^{\circ}C-500^{\circ}C$ 온도범위에서 온도가 증가함에 따라 증가하였으며 알루미나 층이 증착된 $Al_2O_3/TiO_2$ 이중막보다 높은 전도도를 나타내고 있으나, 약 $300^{\circ}C$이상의 온도에서는 $Al_2O_3/TiO_2$ 이중막의 전기 전도도가 급격히 증가하여 $TiO_2$ 박막의 전기전도도 보다 더 높은 값을 나타내었다. 또한 온도에 따른 CO 가스 감도(sensitivity)는 $TiO_2$ 박막의 경우 $400^{\circ}C$까지는 서서히 증가하여 그 이상의 온도에서 급격히 감소하였으나, $Al_2O_3/TiO_2$ 이중막은 $250^{\circ}C$에서 감도가 급격히 증가하여 최대값을 나타내었으며, $350^{\circ}C$에서 감도가 급격히 감소하는 특성을 나타내었다.

• 한국세라믹학회지
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• 제33권9호
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• pp.1012-1018
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• 1996

To investigate the final structures and reactions of silicides a somewhat thick Ti monolayer Co monolayer and Co/Ti bilayer films were deposited on single Si(100) wafer by electron beam evaporation followed by heat treatment using RTA system in N2 ambient. TiO2 film formed between Ti and TiSi2 layers due to oxgen or moisture in the Ti monolayer sample. The final layer structure obtained after the silicidation heat-treatment of the Co/Ti bilayer sample turned out to be TiSi2/CoSi2/Ti-Co-Si alloy/CoSi2/Si sbustrate. This implies that imperfect layer inversion occurred due to the formation of Ti-Co-Si intermediate phase.

• Corrosion Science and Technology
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• 제12권3호
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• pp.119-124
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• 2013

Nano-multilayered, crystalline AlTiSiN thin films were deposited on WC-TiC-Co substrates by the cathodic arc plasma deposition. The deposited film consisted of wurtzite-type AlN, NaCl-type TiN, and tetragonal $Ti_2N$ phases. Their oxidation characteristics were studied at 800 and $900^{\circ}C$ for up to 20 h in air. The WC-TiC-Co oxidized fast with large weight gains. By contrast, the AlTiSiN film displayed superior oxidation resistance, due mainly to formation of the ${\alpha}-Al_2O_3$-rich surface oxide layer, below which an ($Al_2O_3$, $TiO_2$, $SiO_2$)-intermixed scale existed. Their oxidation progressed primarily by the outward diffusion of nitrogen, combined with the inward transport of oxygen that gradually reacted with Al, Ti, and Si in the film.

• 한국분말재료학회지
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• 제12권5호
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• pp.336-344
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• 2005

In the present study, the focus is on the effect of cobalt oxide powder in the carbothermal reduction of the titanium-cobalt-oxygen based oxide powder by solid carbon for the optimizing synthesis process of ultra fine TiC/Co composite powder. The titanium-cobalt-oxygen based oxide powder was prepared by the combination of the spray drying and desalting processes using the titanium dioxide powder and cobalt nitrate as the raw materials. The titanium-cobalt-oxygen based oxide powder was mixed with carbon black, and then this mixture was carbothermally reduced under flowing argon atmosphere. Changes in the phase structure and thermal gravity of the mixture during carbothermal reduction were analysed using XRD and TGA. Titanium-cobalt-oxygen based oxide powder desalted at $600^{\circ}C$ had a mixture of $TiO_2\;and\;Co_{3}O_4$. And the one desalted at $800^{\circ}C$ had a mixture of $TiO_2\;and\;CoTiO_3$. In the case of the former powder, the reduction of cobalt oxide powder in the titanium-cobalt-oxygen based oxide powder occurred at lower temperature than the latter one. However, the carbothermal reduction of titanium dioxide powder in the titanium-cobalt-oxygen based oxide powder with a mixture of $TiO_2\;and\;Co_{3}O_4$ occurred at higher temperature than the one with a mixture of $TiO_2\;and\;CoTiO_3$. And also, the former powder showed a lower TiC formation ability than the latter one.

• 마이크로전자및패키징학회지
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• 제7권3호
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• pp.7-11
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• 2000

공침법을 이용하여 제조한 $SrTiO_3$분말에 $CuO-SiO_2$첨가물을 혼합하여 저전압구동형 SrTiO$_3$세라믹 바리스터 소자를 제조하였다. $CuO-SiO_2$첨가물을 이용한 $SrTiO_3$세라믹 바리스터제조 공정은 복잡한 공정을 단순화시킬 수 있을 뿐만 아니라, 일반적인 소결온도보다 100~$150^{\circ}C$ 낮은 온도에서도 소결이 되었다. 이 바리스터의 비직선계수($\alpha$) 값은 첨가물 5 wt% 혼합하여 $1350^{\circ}C$에서 하소한 시편에서 8.47의 최고값을 나타냈으며, 이때의 구동전압은 7 V 이하로 낮은 구동전압을 가진 바리스터를 제조할 수 있었다.