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http://dx.doi.org/10.5573/JSTS.2008.8.1.080

Resistive Switching Characteristics of TiO2 Films with -Embedded Co Ultra Thin Layer  

Do, Young-Ho (New functional materials and devices lab, Department of Physics, Hanyang University)
Kwak, June-Sik (New functional materials and devices lab, Department of Physics, Hanyang University)
Hong, Jin-Pyo (New functional materials and devices lab, Department of Physics, Hanyang University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.8, no.1, 2008 , pp. 80-84 More about this Journal
Abstract
We systematically investigated the resistive switching properties of thin $TiO_2$ films on Pt/Ti/$SiO_2$/Si substrates that were embedded with a Co ultra thin layer. An in-situ sputtering technique was used to grow both films without breaking the chamber vacuum. A stable bipolar switching in the current-voltage curve was clearly observed in $TiO_2$ films with an embedded Co ultra thin layer, addressing the high and low resistive state under a bias voltage sweep. We propose that the underlying origin involved in the bipolar switching may be attributed to the interface redox reaction between the Co and $TiO_2$ layers. The improved reproducible switching properties of our novel structures under forward and reverse bias stresses demonstrated the possibility of future non-volatile memory elements in a simple capacitive-like structure.
Keywords
ReRAM; nonvolatile memory; bipolar switching; $TiO_2$ films with embedded Co ultra thin layer;
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