• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.62-62
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• 2015

In this study, we study the effects of CF4 plasma treatment on the characteristics of enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs). The CF4 plasma is generated by inductively coupled plasma reactive ion etching (ICP-RIE) system. The CF4 gas is decomposed into fluorine ions by ICP-RIE and then fluorine ions will effect the AlGaN/GaN interface to inhibit the electron transport of two dimension electron gas (2DEG) and increase channel resistance. The CF4 plasma method neither like the recessed type which have to utilize Cl2/BCl3 to etch semiconductor layer nor ion implantation needed high power to implant ions into semiconductor. Both of techniques will cause semiconductor damage. In the experiment, the CF4 treatment time are 0, 50, 100, 150, 200 and 250 seconds. It was found that the devices treated 100 seconds showed best electric performance. In order to prove fluorine ions existing and CF4 plasma treatment not etch epitaxial layer, the secondary ion mass spectrometer confirmed fluorine ions truly existing in the sample which treatment time 100 seconds. Moreover, transmission electron microscopy showed that the sample treated time 100 seconds did not have etch phenomena. Atomic layer deposition is used to grow Al2O3 with thickness 10, 20, 30 and 40 nm. In electrical measurement, the device that deposited 20-nm-thickness Al2O3 showed excellent current ability, the forward saturation current of 210 mA/mm, transconductance (gm) of 44.1 mS/mm and threshold voltage of 2.28 V, ION/IOFF reach to 108. As IV concerning the breakdown voltage measurement, all kinds of samples can reach to 1450 V.

• Journal of Korean Society for Atmospheric Environment
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• v.26 no.1
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• pp.85-93
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• 2010

$CF_4$ removal characteristics were investigated using an elongated arc reactor. The advantage of the elongated arc reactor includes direct use of treated gas as plasma operating gas and the enhancement of the removal reaction by using a thermo-chemistry and a plasma induced chemistry at the same time. Geometrical configurations, such as the length of the reactor and the shape of a throat, were tested to get an optimized removal efficiency with low power consumption. As results, over 95% of $CF_4$ removal was obtained with 300 lpm of total flowrate for various $CF_4$ concentration (0.1~1%). Corresponding specific energy density (SED), which means required electrical energy to treat the unit volume of treated gas, is about 3.5 kJ/L, The present technique can be applied to real applications by satisfying three major concerns, those are the high flowrate of treated gas, high removal efficiency (> 95%), and low power consumption (< 10 kJ/L).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.1
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• pp.10-13
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• 2010

The plasma processing technologies of thin film deposition and surface treatment technique have been applied to many industrial fields. This study is purposed Large-area uniformity and surface treatment on the stainless substrate. We treat surface of stainless by $CF_4$ plasma. $CF_4$ plasma is generated by using SPM(Scanning plasma method)which is kind a of CVD. Generally, SPM has been used for uniform surface treatment using a crossed electromagnetic field. The optimum discharge condition has been studied for the gas pressure, the magnetic flux density and the distance between substrate and electrodes. In result, contact angle is increased by surface treatment using $CF_4$ Plasma. Therefore we expect that SPM to control contact angle is applied to many industries.

• Analytical Science and Technology
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• v.16 no.5
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• pp.368-374
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• 2003

Halogen gases such as $BCl_3$ and $CF_4$ are among the most problematic gases used in semiconductor process. They raise serious environmental and health problems due to their extreme toxicity. This study is to develop a method to effectively remove those gases during the process by using various types of inorganic gas adsorption agents such as zeolite A, modified AgA zeolite, ZnO, and $AgMnO_3$, which have not been attempted in the conventional methods. The removal efficiencies of the gases were both qualitatively and quantitatively measured by a FT-IR spectrophotometer. The whole device for the measurement has been designed and built in our lab. The removal efficiencies of the gases were compared between those used resins. The experimental result revealed that ZnO showed the best removal efficiency for BCl3 gas that had removed 0.094 g per 1 g of the resin used. For $CF_4$ gas, none of the solid resins was able to remove the gas effectively. However, liquid $CHCl_3$ showed some removal ability of the $CF_4$ gas.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1399-1401
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• 2009

In this article, we reported the results of etching polymonochloro-para-xylylene (parylene-C) thin films using inductively coupled plasma and $CF_4/O_2$ gas mixture. The $CF_4$ gas fraction increased up to the approximately 16 %, the polymer etch rate increased in the range of 277 - 373 nm/min. It confirmed that the etch rate of the parylene-C mainly depended on the O radical density in the plasma. Using a contact angle measurement, the contact angle increased with increasing the $CF_4$ fraction. Moreover, the contact angle was highly related a $CF_x$ functional group on parylene films.

• Clean Technology
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• v.19 no.2
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• pp.113-120
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• 2013

The treatment of chemically stable perflourocompounds (PFCs) requires a large amount of energy. An energy efficient arc plasma system has been developed to overcome such disadvantage. $CF_4$, $SF_6$ and $NF_3$ were injected into the plasma torch directly, and net plasma power was estimated from the measurement of thermal efficiency of the system. Effects of net plasma power, waste gas flow rate and additive gases on the destruction and removal efficiency (DRE) of PFCs were examined. The calculation of thermodynamic equilibrium composition was also conducted to compare with experimental results. The average thermal efficiency was ranged from 60 to 66% with increasing waste gas flow rate, while DRE of PFCs was decreased with increasing gas flow rate. On the other hand, DRE of each PFCs was increased with the increasing input power. Maximum DREs of $CF_4$, $SF_6$ and $NF_3$ were 4%, 15% and 90%, respectively, without reaction gas at the fixed input power and waste gas flow rate of 3 kW and 70 L/min. A rapid increase of DRE was found using hydrogen or oxygen additional gases. Hydrogen was more effective than oxygen to decompose PFCs and to control by-products. The major by-product in the arc plasma process with hydrogen was hydrofluoric acid that is easy to be removed by a wet scrubber. DREs of $CF_4$, $SF_6$ and $NF_3$ were 25%, 39% and 99%, respectively, using hydrogen additional gas at the waste gas flow rate of 100 L/min and the input power of 3 kW.

• Journal of Electrical Engineering and Technology
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• v.12 no.5
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• pp.2007-2013
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• 2017

In order to give hydrophobic surface properties on carbon steel, the fluorinated amorphous carbon films were prepared by using linear 2.45GHz microwave PECVD device. Two different process approaches have been tested. One is direct deposition of a-C:H:F films using admixture of $Ar/CH_4/CF_4$ working gases and the other is surface treatment using $CF_4$ plasma after deposition of a-C:H film with $Ar/CH_4$ binary gas system. $Ar/CF_4$ plasma treated surface with high $CF_4$ gas ratio shows best hydrophobicity and durability of hydrophobicity. Nanometer scale surface roughness seems one of the most important factors for hydrophobicity within our experimental conditions. The properties of a-C:H:F films and $CF_4$ plasma treated a-C:H films were investigated in terms of surface roughness, hardness, microstructure, chemical bonding, atomic bonding structure between carbon and fluorine, adhesion and water contact angle by using atomic force microscopy (AFM), nano-indentation, Raman analysis and X-ray photoelectron spectroscopy (XPS).

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.04a
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• pp.85-85
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• 2006

• Fibers and Polymers
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• v.3 no.4
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• pp.174-178
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• 2002

A plasma treatment using saturated $CF_4$ gas was employed to improve the resistance of polypropylene fabrics to water wetting. The fabrics were significantly fluorinated even within a short treatment time of 30 seconds. The result of contact angle measurement indicated that such highly hydrophobic surface was considerably durable even after 150 days of aging.

• Textile Coloration and Finishing
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• v.4 no.2
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• pp.76-83
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• 1992

Wool tropical and nylon taffeta were treated with low temperature plasma of $O_2$, $N_2$, NH$_3$, CF$_4$ and CH$_4$ for the intervals of 10 to 300 sec, and then dyed with leveling and milling type acid dyes in presence or absence of buffer solution. From the color depth of dyed fabrics, effect of plasma gases, treated time, dyeing time and temperature on dyeing property was studied. The results of the experiment can be summarized as follows: 1) The plasma treatments except methane gas increased the color depth of dyed wool fabrics, but not that of dyed nylon fabrics regardless of the plasma gases used. 2) The color depth of wool fabrics dyed in the dye bath without buffer solution was increased by the low temperature plasma, especially increased much more by CF$_4$ plasma treatment. It is found that with the identification of F- ion in the residual dye bath the hydrogen fluoride gas was adsorbed on wool fabrics in the plasma treatment. 3) The color depth of wool fabrics was increased with the time of $O_2$ and CF$_4$ plasma treatments. 4) In both cases of the leveling and milling type acid dyes, the rate of dyeing was increased in the low temperature plasma treatments, and it is found that the leveling type acid dye increased the color depth at relatively low temperature below 4$0^{\circ}C$, compared with the milling type acid dye.