• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.339-343
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• 2005

Pt-$SrBi_2Nb_2O_9(SBN)-Pt-Y_2O_3-Si$ gate field effect transistors (MFMISFETs) have been fabricated and the SBN thin films are rapid thermal annealed in oxygen plasma. The grain size of the SBN becomes 4 times much larger than that of furnace annealed SBN films even at the same annealing temperature of $700^{\circ}C$, remnant polarization value of Pt-SBN-Pt is improved by 2 times. Using the rapid grain growth of SBN for the MFM-ISFET, memory window and programming characteristics of on/off states are fairly well improved.

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.175.1-175
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• 2002

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.180.1-180
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• 2003

• Korean Journal of Materials Research
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• v.13 no.5
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• pp.317-322
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• 2003

Bismuth layered structure ferroelectric thin films, $Bi_4$$Ti_3$$O_{12}$ / (BTO) and Nb-doped BTO (BTN) were prepared on the Pt(111)/Ti/$SiO_2$/Si(100) substrates by a sol-gel route. We investigated the Nb-doping effect on the grain orientation and ferroelectric properties. $Nb^{5＋}$ ion substitution for $Ti^{4＋}$ ion in perovskite layers of BTO decreased the degree of c-axis orientation and increased the remanent polarization (2Pr). The fatigue resistance of Nb-doped BTO thin film was shown to be superior to that of BTO, and the leakage current of Nb-doped BTO thin film was decreased about 1 order of magnitude compared with BTO. The improvement of ferroelectric properties with $Nb^{5＋}$ doping in BTO could be attributed to the changes in space charge densities and grain orientation in the thin film.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1232-1233
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• 2006

To co-fire with commercial LTCC (Low Temperature Co-fired Ceramic) materials at $850^{\circ}C{\sim}880^{\circ}C$, different contents of $B_2O_3$ were added to the $Bi_2O_3-ZnO-Nb_2O_5$ (BZN) ceramics. According to the test results, the cubic phase of BZN was transformed into orthorhombic in all the test materials. $BiNbO_4$ phase was formed in test materials with $2{\sim}5wt%$ of $B_2O_3$ addition. The phase transformation of cubic BZN was controlled during the synthesis process with excess ZnO content. The Cubic and orthorhombic phases of BZN could coexist and be sintered densely at $850^{\circ}C/2hr$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.185-186
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• 2008

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/SiO2/Si) using RF sputtering method at various substrate temperature. The optimum conditions of RF power and Ar/O2 ratio were 60[W] and 70/30, respectively. The rougness showed about 4.33[nm]. Deposition rate of SBN thin films was about 4.17[nm/min]. The capacitance of SBN thin films were increased with the increase of substrate temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.32-32
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• 2008

Microstructure and positive temperature coefficient of resistivity (PTCR) characteristics of $0.9BaTiO_3-0.1(Bi_{0.5}Na_{0.5})TiO_3$ [BaBiNT] ceramics doped with $Nb_2O_5$ were investigated in order to develop the Pb-free high Curie temperature ($T_c$)(>$160^{\circ}C$) PTC thermistor. The BaBiNT ceramics showed a tetragonal perovskite structure, irrespective of the added amount of $Nb_2O_5$. They also have a homogeneous microstructure. The resistivity of BaBiNT ceramics was gradually decreased by doping $Nb_2O_5$, which might be due to $Nb^{+5}$ ions substituting for $Ti^{+4}$ sites. The PTCR characteristics of BaBiNT ceramics appeared when the amount of doped $Nb_2O_5$ exceeded 0.0025mol%. Moreover, the abrupt grain growth was observed for the 0.03mol% $Nb_2O_5$added BaBiNT ceramics. It showed an especially high $T_c$ of approximately $172^{\circ}C$ and good PTCR characteristics of a high $\rho_{max}/\rho_{min}$ ratio ($2.96\times10^3$), a high resistivity temperature factor (11.40/$^{\circ}C$) along with a relatively low resistivity ($3.5\times10^4\Omega{\cdot}cm$).

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.176.2-176
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• 2003

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.14-17
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• 1995

In this study, fur the use of portable communication multilayer devices. 0.15wt% V$_2$O$\_$5/ added BiNbO$_4$which is low-fire microwave dielectric ceramic as able to co-fire with high conductors was made into specimens with the additions of Cr$_2$O$_3$0.04, 0.2, 0.4, 0.8, 1.2wt%. These specimens were sintered at 930, 960. 990, 1030$^{\circ}C$ respectively to make the microwave dielectric resonators. These resonators were investigated by measuring the structure and dielectric properties. The density of the specimens was increased by the amounts of the Cr$_2$O$_3$and increased by increasing the temperature. 0.8wt% Cr$_2$O$_3$added and sintered at 960$^{\circ}C$ specimen skewed 49 dielectric constant. Q$.$f values were increased by the amounts of Cr$_2$O$_3$. And Q value was deteriorated by the additions of Cr$_2$O$_3$at sufficiently sintered temperatures. Negative resonant temperature coefficients were moved to positive by the amounts of Cr$_2$O$_3$and returned negative again at 1.2wt%. Temperature characteristics were deteriorated at 1030$^{\circ}C$.

• Korean Journal of Materials Research
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• v.13 no.12
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• pp.846-849
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• 2003

Doping effect of various ions in Bi-layered ferroelectric $SrBi_2$$Nb_2$$O_{9}$ (SBN) ceramics was studied. Undoped SBN ceramic and SBN ceramics doped with $Ba^{2＋}$, $Pb^{2＋}$,$ Ca^{2＋}$ , $Bi^{3＋}$ , $La^{3＋}$ , $Ti^{4＋}$ , $Mo^{6＋}$ , and $W^{6＋}$ ions were made by a solid state reaction. Dielectric constants were measured with temperature. Ferroelectric transition temperature decreased with $Pb^{2＋}$ , $Ba^{2＋}$ , $La^{3＋}$ doping, but the transition temperature increased with $Ca^{2＋}$ , $Bi^{3＋}$ , $Ti^{4＋}$, $Mo^{6＋}$ , or$ W^{6＋}$ ionic doping. These results show that the ion size plays an important role in the ferroelectricity of SBN ceramic.