The Dielectric Properties of the Cr added BiNbO$_4$Ceramics

Cr이 첨가된 BiNbO$_4$유전체 세라믹스의 유전 특성

  • 심규진 (연세대학교 전기공학과) ;
  • 박정흠 (연세대학교 전기공학과) ;
  • 윤광희 (연세대학교 전기공학과) ;
  • 윤현상 (연세대학교 전기공학과) ;
  • 박용욱 (연세대학교 전기공학과) ;
  • 박창엽 (연세대학교 전기공학과)
  • Published : 1995.11.01

Abstract

In this study, fur the use of portable communication multilayer devices. 0.15wt% V$_2$O$\_$5/ added BiNbO$_4$which is low-fire microwave dielectric ceramic as able to co-fire with high conductors was made into specimens with the additions of Cr$_2$O$_3$0.04, 0.2, 0.4, 0.8, 1.2wt%. These specimens were sintered at 930, 960. 990, 1030$^{\circ}C$ respectively to make the microwave dielectric resonators. These resonators were investigated by measuring the structure and dielectric properties. The density of the specimens was increased by the amounts of the Cr$_2$O$_3$and increased by increasing the temperature. 0.8wt% Cr$_2$O$_3$added and sintered at 960$^{\circ}C$ specimen skewed 49 dielectric constant. Q$.$f values were increased by the amounts of Cr$_2$O$_3$. And Q value was deteriorated by the additions of Cr$_2$O$_3$at sufficiently sintered temperatures. Negative resonant temperature coefficients were moved to positive by the amounts of Cr$_2$O$_3$and returned negative again at 1.2wt%. Temperature characteristics were deteriorated at 1030$^{\circ}C$.

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