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http://dx.doi.org/10.3740/MRSK.2003.13.5.317

Microstructures and Electrical Properties of Niobium-doped Bi4Ti3O12 Thin Films Fabricated by a Sol-gel Route  

Kim, Sang-Su (Department of Physics, Changwon National University)
Jang, Ki-Wan (Department of Physics, Changwon National University)
Han, Chang-Hee (Department of Physics, Changwon National University)
Lee, Ho-Sueb (Department of Physics, Changwon National University)
Kim, Won-Jeong (Department of Physics, Changwon National University)
Choi, Eun-Kyung (Department of Physics, Changwon National University)
Park, Mun-Heum (Department of Physics, Changwon National University)
Publication Information
Korean Journal of Materials Research / v.13, no.5, 2003 , pp. 317-322 More about this Journal
Abstract
Bismuth layered structure ferroelectric thin films, $Bi_4$$Ti_3$$O_{12}$ / (BTO) and Nb-doped BTO (BTN) were prepared on the Pt(111)/Ti/$SiO_2$/Si(100) substrates by a sol-gel route. We investigated the Nb-doping effect on the grain orientation and ferroelectric properties. $Nb^{5＋}$ ion substitution for $Ti^{4＋}$ ion in perovskite layers of BTO decreased the degree of c-axis orientation and increased the remanent polarization (2Pr). The fatigue resistance of Nb-doped BTO thin film was shown to be superior to that of BTO, and the leakage current of Nb-doped BTO thin film was decreased about 1 order of magnitude compared with BTO. The improvement of ferroelectric properties with $Nb^{5＋}$ doping in BTO could be attributed to the changes in space charge densities and grain orientation in the thin film.
Keywords
${Bi_4}{Ti_3}{O_{12}}$ thin film; sol-gel; orientation; ferroelectric properties;
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