• 한국표면공학회지
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• 제30권4호
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• pp.285-297
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• 1997

Finned segment, with which are lined inner wall of the turbine combustors, are subject to severe degradation when they are exposed to a hostile environmment at elevated temperature. To protect the finned segment from this environment and to maintain good mechanical properties of components at high temperature, they are preferred to be coated. The most governing factor for the durability of coatings used in the high temperature is the microstructure of coatings; these are splat from, distibution of microcacks, size and distribution of pores, thickness of coating layer, adhesion between coating layer, and oxidation of band coating. In this study, based on the evaluation of the imported finned segment, new finned segment segment was manufactured with optimum plasma spraying parameters, and their properties were examined. Using $ZrO_2(8wt$Y_2O_3)$,/TEX> powder for ceramic coating and 67Ni-22Cr-10Al-0.5Y mixing powder for bond coating, thickness of ceramic and bond coating layer were varied in order to find optimum condition, the results showed that B2T4(bond coating : 100~250$\mu\textrm{m}$, ceramic coating : 250~300$\mu\textrm{m}$) was the best among the specimens tested. Compared to the imported finned segment, B2T4 has better bond strength, hardness, and isothermal and cyclic oxidation resistance.

• 한국주조공학회지
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• 제30권3호
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• pp.94-99
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• 2010

When the returned scrap of bulk amorphous alloy is remelted, impurities such as oxides and intermetallic compounds increase. Glass forming ability of its scrap is deteriorated remarkably. Melt fluxing technique is introduced to enhance the glass forming ability during melting and freezing of bulk amorphous alloys. Cu and Zr based alloys are chosen. Small pieces of these alloy scraps and $B_2O_3$ flux are put together in a quartz tube. Cyclic heating and cooling are done by induction heating and water quenching or air cooling. Melting fluxing was effective for both Cu-based and Zr-based alloy, and their glass forming abilities were improved with increasing the number of fluxing.

• 한국재료학회지
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• 제15권6호
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• pp.413-418
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• 2005

Perovskite $Pb(Ni_{1/3}Nb_{2/3})O_3-Pb(Zr,Ti)O_3[PNN-PZT]$ ceramics were synthesized by conventional ceramic processing technique. In order to modify piezoelectric properties for sensor application in this system, NiO addition was considered to provide $Ni^{+2}$ as an acceptor, which was known to occupy with B site in the structure. The effect of NiO addition up to $8\;mol\%$ on the following piezoelectric properties as well as sintering properties was investigated. When NiO added more than $1\;mol\%$, average grain size was decreased and second phase was found to form. Moreover, the second phase caused decrease in relative dielectric constant $(\varepsilon_{33}T/\varepsilon0)$, electro-mechanical coupling factor $(k_p)$, and piezoelectric charge constant $(d_{33})$, while increasing mechanical quality factor $(Q_m)$. When $1\;mol\%$ NiO was added, density, dielectric properties and piezoelectric properties were abruptly increased.

• 한국진공학회지
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• 제15권2호
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• pp.173-179
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• 2006

Pulsed laser deposition 방법으로 증착한 $PbZr_{0.3}Ti_{0.7}O_{3}$ (PZT)박막의 구조적, 전기적 성질에 대한 연구를 하였다. PZT 박막은 $LaAlO_3$ 기판위에 동일한 조건으로 증착된 $LaMnO_3$ (LMO) 산화물을 하부 전극으로 하여 증착시간을 변화시키며 증착하였다. High-resolution x-ray diffraction 결과를 통해 LMO 하부 전극과 PZT 박막이 방향성 있게 자란 것을 확인할 수 있었고 박막의 두께는 field-emission scanning electron microscope을 통하여 측정할 수 있었다. 또한 우리는 atomic force microscopy을 이용하여 박막의 표면 거칠기를 구하였고 국소적인 범위의 전기적 특성은 piezoelectric force microscopy 모드를 이용하여 측정하였다. 그 결과 PZT/LMO 구조는 나노 스토리지의 미디어로 쓰이기 위해 필요한 성질들을 갖추었음을 알 수 있었다.

• 센서학회지
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• 제15권3호
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• pp.168-172
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• 2006

Potentiometric $CO_{2}$ sensors were fabricated using a NASICON ($Na_{1+x}Zr_{2}Si_{X}P_{3-X}O_{12}$, 1.8 < x < 2.4) thick film and auxiliary layers. The powder of a precursor of NASICON with high purity was synthesized by a sol-gel method. By using the NASICON paste, an electrolyte was prepared on the alumina substrate by screen printing and then sintered at $1000^{\circ}C$ for 4 h. A series of $Na_{2}CO_{3}-CaCO_{3}$ auxiliary phases were deposited on the Pt sensing electrode. The electromotive force (emf) values were linearly dependent on the logarithm of $CO_{2}$ concentration in the range between 1,000 and 10,000 ppm. The device attached with $Na_{2}CO_{3}-CaCO_{3}$ (1:2 in mol.%) showed good sensing properties in the low temperatures.

• 마이크로전자및패키징학회지
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• 제18권3호
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• pp.9-17
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• 2011

Nano-composite solders have been studied to improve the properties of Pb-free solder joints. The nanoparticles in the composite solders were carbon nanotubes(CNTs), metals (Ag, Ni, Cr, etc.), ceramics (SiC, $ZrO_2$, $TiB_2$, etc.). To fabricate the nano-composite solders, mechanical mixing methods and in-situ fabrication method has been used for well-dispersed nano phase. The characteristic properties of the nano-composite solders were high creep resistance, low undercooling, low IMC growth rate and fine microstructures. More researches on the nano-composite solders are required to improve the processibility and the reliability of the nano-composite solder joints.

• 한국재료학회지
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• 제28권11호
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• pp.611-614
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• 2018

Laminate composites composed of $0.95Pb(Zr_{0.52}Ti_{0.48})O_3-0.05Pb(Mn_{1/3}Sb_{2/3})O_3$ piezoelectric ceramic and Fe-Si-B based magnetostrictive amorphous alloy are fabricated, and the effect of control of the areal dimensions and the thickness of the piezoelectric layer on the magnetoelectric(ME) properties of the laminate composites is studied. As the aspect ratio of the piezoelectric layer and the magnetostrictive layer increases, the maximum value of the ME voltage coefficient(${\alpha}_{ME}$) increases and the intensity of the DC magnetic field at which the maximum ${\alpha}_{ME}$ value appears decreases. Moreover, as the thickness of the piezoelectric layer decreases, ${\alpha}_{ME}$ tends to increase. The ME composites exhibit ${\alpha}_{ME}$ values higher than $1Vcm^{-1}Oe^{-1}$ even at the non-resonance frequency of 1 kHz. This study shows that, apart from the inherent characteristics of the piezoelectric composition, small thicknesses and high aspect ratios of the piezoelectric layer are important dimensional determinants for achieving high ME performance of the piezoelectric-magnetostrictive laminate composite.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1349-1352
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• 2005

This paper is to investigate a defect for thermal barrier coating layers by acoustic emission method in 4-point bending test. The two-layer thermal barrier coating is composed of $150\mu{m}\;CoNiCrAlY\;bond\;coating\;by\;vacuum\;plasma\;spray(VPS)\;process\;and\;250\mu{m}\;ZrO_2-8wt%Y_2O_3$ ceramic coating layer by air plasma spray(APS) process on Inconel-718. The specimen prepared by cyclic thermal test(500, 1000, 2000cycle) at $1050^{\circ}C$ The AE monitoring system is composed of PICO type sensor, a wide band pre-amplifier(40dB), PC and AE DSP(16/32 PAC) board. The AE event, amplitude, Cumulative energy and count of coating specimens is evaluated according to cyclic thermal test.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권1호
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• pp.66-79
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• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

• 한국재료학회지
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• 제17권1호
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• pp.18-24
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• 2007

Mullite-PSZ composite was prepared by sol-gel method using $Al(sec-OC_4H_9)_3,\;Si(OC_2H_5)_4,\;ZrOCl_2\;8H_2O\;and\;Y_2O_3$. The sinterability ana mechanical properties of powder compacts sintered at $1,650^{\circ}C$ for 4 hrs were investigated for various PSZ contents. In result Al-Si spinel formed at $980^{\circ}C$ from amorphous dried gel, and zirconia as well as mullite crystal formed above $1,200^{\circ}C$. The sintered body was densified to $97{\sim}98%$ except the specimen containing 25vol% PSZ which showed the relative density of about 95% obtained by sintering at $1,650^{\circ}C$ for 4 h. The flexural strength of the sintered body was a maximum value of 290 MPa in 20 vol% PSZ, which was also considerably larger than the value of 200 MPa without PSZ. The value of the fracture toughness increased linearly with increase of PSZ content and showed a maximum value of $4.3MPam^{1/2}$ in 25 vol% PSZ, Namely this value was remarkably larger than the $value(2.6MPam^{1/2})$ of pure mullite without PSZ.