• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2008년도 추계학술대회 초록집
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• pp.41-42
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• 2008

본 논문에서는 As-doped ZnO 박막의 플라즈마 식각 특성 및 메커니즘에 관하여 실험을 수행 하였다. As-doped ZnO 박막 식각 실험은 유도 결합 플라즈마 식각 장비(inductively coupled plasma;ICP)와 $BCl_3$/Ar 플라즈마에 첨가된 $Cl_2$가스의 비, RF 전력, DC bias voltage, 공정 압력에 대한 식각 속도의 변화를 관찰 하였다. $BCl_3$/Ar 플라즈마에 $Cl_2$ 가스 첨가량 6 sccm 까지는 증가하지만 그 이후 $Cl_2$ 가스의 첨가량이 증가할 때 식각속도가 감소하였다. 이는 플라즈마 내에서 Cl 라디칼의 밀도가 증가함에 따라서 $Ar^+$의 에너지가 감소와 비휘발성 식각 부산물의 증가에 의하여 효과적인 물리적 식각이 이루어 지지 못한 것으로 판단된다. OES를 이용하여 플라즈마 내에서 라디칼들의 빛의 세기를 측정하였고, 식각 후 As-type ZnO 박막 표면에서의 화학적 결합을 보기위해 XPS 분석을 실행하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.848-850
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• 1999

In this study, PZT etching was performed using planar inductively coupled Ar(20)/$Cl_2/BCl_3$ plasma, The etch rate of PZT film was 2450 $\AA/min$ at Ar(20)/$BCl_3$(80) gas mixing ratio and substrate temperature of $80^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis for film composition was utilized. The chemical bond of PbO is broken by ion bombardment, and the peak of metal Pb in a Pb 4f peak begins to appear upon etching, decreasing Pb content faster than Zr and Ti. As increase content of additive $BCl_3$, the relative content of oxygen decreases rapidly. We thought that abundant Band BCl radicals made volatile oxy-compound such as $B_{x}O_{y}$ and/or $BClO_x$ bond. To understand etching mechanism, Langmuir probe and optical emission spectroscopy (OES) analysis were utilized for plasma diagnostic.

• 한국세라믹학회지
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• 제34권3호
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• pp.249-256
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• 1997

100-500KHz범위의 주파수전원을 인가하여 발생한 플라즈마를 이용하여 질화붕소(boron nitride)막의 합성시 육방정상(hexagonal phase)과 입방정상(cubic phase)의 생성거동을 관찰하였다. BCl3와 NH3를 붕소와 질소의 공급기체로 선택하였고 Ar과 수소를 carrier기체로 사용하였다. 합성변수로는 플라즈마전원의 전압, 기판의 bias, 합성압력, 기체의 조성, 기판의 온도이었는데, 합성된 박막은 FT-IR결과로부터 육방정과 입방정의 혼합상으로 나타났고, 각 상의 분률은 변수의 크기에 의존하였다. TEM분석결과 육방정으로만 구성된 박막은 비정질상으로 이루어졌으며, 입방정과 육방정의 혼합상의 경우는 비정질기지상에 수십 nanometer크기의 입방정입자가 분산된 구조를 하고 있었다.

• Transactions on Electrical and Electronic Materials
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• 제11권5호
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• pp.202-205
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• 2010

In this study, the etch properties of $Al_2O_3$ thin films deposited by atomic layer deposition were investigated as a function of the $O_2$ content in $BCl_3$/Ar inductively coupled plasma. The experiments were performed by comparing the etch rates and selectivity of $Al_2O_3$ over the hard mask materials as functions of the input plasma parameters, such as the gas mixing ratio, DC-bias voltage, ratio-frequency (RF) power and process pressure. The highest obtained etch rate was 477 nm/min at an RF power of 700 W, $O_2$ to $BCl_3$/Ar gas ratio of 15%, DC-bias voltage of -100 V and process pressure of 15 mTorr. The deposition occurred on the surfaces when the amount of $O_2$ added to the $BCl_3$/Ar gas was too high at a low DC-bias voltage or high process pressure. X-ray photoelectron spectroscopy was used to investigate the chemical reactions on the etched surface.

• Transactions on Electrical and Electronic Materials
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• 제11권3호
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• pp.116-119
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• 2010

The etching characteristics of zinc oxide (ZnO) were investigated, including the etch rate and the selectivity of ZnO in a $Cl_2/BCl_3$/Ar plasma. It was found that the ZnO etch rate, the RF power, and the gas pressure showed non-monotonic behaviors with an increasing Cl2 fraction in the $Cl_2/BCl_3$/Ar plasma, a gas mixture of $Cl_2$(3 sccm)/$BCl_3$(16 sccm)/Ar (4 sccm) resulted in a maximum ZnO etch rate of 53 nm/min and a maximum etch selectivity of 0.89 for ZnO/$SiO_2$. We used atomic force microscopy to determine the roughness of the surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas. Due to the relatively low volatility of the by-products formed during etching with $Cl_2/BCl_3$/Ar plasma, ion bombardment and physical sputtering were required to obtain the high ZnO etch rate. The chemical states of the etched surfaces were investigated using X-ray photoelectron spectroscopy (XPS). This data suggested that the ZnO etch mechanism was due to ion enhanced chemical etching.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 추계학술대회 초록집
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• pp.219-220
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• 2009

이번 실험에서는 TiN의 건식 식각 특성을 연구하기 위해 $BCl_3/Ar/N_2$ 유도 결합플라즈마를 이용하였다. BCl3와 Ar의 가스 비율이 $BCl_3$ (5 sccm)/Ar (15 sccm)/N (4 sccm) 인 상황에서 RF power와 DC bias, 그리고 process pressure을 식각변수로 설정하였다. TiN의 식각률은 Alpha-step 500으로 측정하였고 표면의 식각 후 화학반응은 XPS로 측정하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.175-175
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• 2010

The etching characteristics with etch rate of ITO thin films in an $O_2/BCl_3$/Ar plasma were investigated. The etch rate of ITO thin films increased with increasing $O_2$ content from 0 to 10 % in $BCl_3$/Ar plasma, whereas that of ITO decreased with increasing $O_2$ content from 10 % to 30 % in $BCl_3$/Ar plasma. The maximum etch rate of 65.9 nm/min for the ITO thin films was obtained at 10 % $O_2$ addition. The etch conditions were the RF power of 500 W, bias power of 200 W, and process pressure of 2 Pa. The analysis of x-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of ITO thin films and etch species.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.124-125
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• 2005

ZnS:Mn thin films have attracted great interest as electroluminescence devices. In this study, inductively coupled BCl$_3$/Ar plasma was used to etch ZnS:Mn thin films. We obtained the maximum etch rate of ZnS:Mn thin films was 2209 ${\AA}$/min at a BCl$_3$(20%)/Ar(80%) gas mixing ratio, an RF power of 700 W, a DC bias voltage of-250 V, a total gas flow of 20 sccm, and a chamber pressure of 1 Pa. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.88-88
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• 2003

Optical Emission Spectroscopy(OES) is a very important technology for real-time monitoring of plasma in a reactor during dry etching process. OES technology is non-invasive to the plasma process. It can be used to collect information on excitation and recombination between electrons and ions in the plasma. It also helps easily diagnose plasma intensity and monitor end-point during plasma etch processing. We studied high density planar inductively coupled BCl$_3$ and BCl$_3$/Ar plasma with an OES as a function of processing pressure, RIE chuck power, ICP source power and gas composition. The scan range of wavelength used was from 400 nm to 1000 nm. It was found that OES peak Intensity was a strong function of ICP source power and processing pressure, while it was almost independent on RIE chuck power in BCl$_3$-based planar ICP processes. It was also worthwhile to note that increase of processing pressure reduced negatively self-induced dc bias. The case was reverse for RIE chuck power. ICP power and gas composition hardly had influence on do bias. We will report OES results of high density planar inductively coupled BCl$_3$ and BCl$_3$/Ar Plasma in detail in this presentation.

• 한국재료학회지
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• 제13권12호
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• pp.775-778
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• 2003

We studied InP etching in high density planar inductively coupled $BCl_3$and $BCl_3$/Ar plasmas(PICP). The investigated process parameters were PICP source power, RIE chuck power, chamber pressure and $BCl_3$/Ar gas composition. It was found that increase of PICP source power and RIE chuck power increased etch rate of InP, while that of chamber pressure decreased etch rate. Etched InP surface was clean and smooth (RMS roughness <2 nm) with a moderate etch rate (300-500 $\AA$/min) after the planar $BCl_3$/Ar ICP etching. It may make it possible to open a new regime of InP etching with $CH_4$$H_2$-free plasma chemistry. Some amount of Ar addition (<50%) also improved etch rates of InP, while too much Ar addition reduced etch rates of InP.