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http://dx.doi.org/10.3740/MRSK.2003.13.12.775

High Density Inductively Coupled Plasma Etching of InP in BCl3-Based Chemistries  

Cho, Guan-Sik (School of Nano Engineering, Inge University/ Institute of Nano-Technology Applications)
Lim, Wan-tae (School of Nano Engineering, Inge University/ Institute of Nano-Technology Applications)
Baek, In-Kyoo (School of Nano Engineering, Inge University/ Institute of Nano-Technology Applications)
Lee, Je-won (School of Nano Engineering, Inge University/ Institute of Nano-Technology Applications)
Jeon, Min-hyun (School of Nano Engineering, Inge University/ Institute of Nano-Technology Applications)
Publication Information
Korean Journal of Materials Research / v.13, no.12, 2003 , pp. 775-778 More about this Journal
Abstract
We studied InP etching in high density planar inductively coupled $BCl_3$and $BCl_3$/Ar plasmas(PICP). The investigated process parameters were PICP source power, RIE chuck power, chamber pressure and $BCl_3$/Ar gas composition. It was found that increase of PICP source power and RIE chuck power increased etch rate of InP, while that of chamber pressure decreased etch rate. Etched InP surface was clean and smooth (RMS roughness <2 nm) with a moderate etch rate (300-500 $\AA$/min) after the planar $BCl_3$/Ar ICP etching. It may make it possible to open a new regime of InP etching with $CH_4$$H_2$-free plasma chemistry. Some amount of Ar addition (<50%) also improved etch rates of InP, while too much Ar addition reduced etch rates of InP.
Keywords
ICP; Dry Etching; InP; HDPICP; BCl$_3$;
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