• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.323-323
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• 2007

Influence of $La_2O_3$ addition to $CaO-B_2O_3$-based glass on the water leaching resistance of the glass was first investigated. The optimized $La_2O_3-CaO-B_2O_3$(LCB) glass was ball milled for varying time, followed by mixing with $Al_2O_3$ crystalline phase to form $Al_2O_3$-LCB glass composites at $875^{\circ}C$ for 1h. Microwave dielectric properties of the composites were investigated as a function of the ball milling time of the LCB glass. Dielectric constant and quality factor of the composites were 6.31 and 13856 GHz, respectively, when the LCB glass was ball milled for 2h prior to mixing with $Al_2O_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.324-324
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• 2007

Influence of $La_2O_3$ addition to $ZnO-B_2O_3$-based glass on the water leaching resistance of the glass was first investigated. The optimized $La_2O_3-ZnO-B_2O_3$ (LZB) glass was ball milled for varying time, followed by mixing with $Al_2O_3$ crystalline phase to form $Al_2O_3$-LZB glass composites at $875^{\circ}C$ for lh. Microwave dielectric properties of the composites were investigated as a function of the ball milling time of the LZB glass. Dielectric constant and quality factor of the composites were 6.01 and 11676 GHz, respectively, when the LZB glass was ball milled for 2h prior to mixing with $Al_2O_3$.

• Journal of the Korean Ceramic Society
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• v.43 no.8 s.291
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• pp.469-471
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• 2006

The effects of $Cr_2O_3$ on the microstructural evolution and mechanical properties of $Al_2O_3$ polycrystalline were investigated. The microstructure of $Al_2O_3-Cr_2O_3$ composites (ruby) was carefully controlled in order to obtain dense and fine-grained ceramics, thereby improving their properties and reliability with respect to numerous applications related to semiconductor bonding technology. Ruby composites were produced by Ceramic Injection Molding (CIM) technology. Room temperature strength, hardness, Young's modulus and toughness were determined, as well as surface strengthening induced by thermal treatment and production of a fine-grained homogenous microstructure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.406-411
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• 2002

Ni-Zn ferrite is required to have predominant and stable characteristics in the range of high frequency for the power line communication, so that microstructures and magnetic properties such as power loss and initial permeability in $Ni_{0.8}Zn_{0.2}Fe_2O_4$ were investigated in terms of variable $Bi_2O_3,CaO$ and $V_2O_5$ contents. $Bi_2O_3$ and $V_2O_5$ liquid phase created during sintering process promoted sintering and grain growth but much of the closed pore existed in the grains. The grain size of the specimens with $V_2O_5$ of over 0.5 wt% decreased as the result of "pinning effect"and the resonance frequency increased with CaO of 0.3we%. The high initial permeability of 81.52%, resonance frequency of 17.05 MHz and low power loss of 17,858 kW/$\textrm{m}^3$ were obtained from the samples with $Bi_2O_3$ of 0.5, CaO of 0.3, and $V_2O_5$ of 0.7 wt%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.5
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• pp.307-312
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• 2018

Liquid phases in ZnO varistors cause more complex phase development and microstructure, which makes the control of electrical properties and reliability more difficult. Therefore, we have investigated 2 mol% $CaCO_3$ doped $ZnO-Co_3O_4-Cr_2O_3-La_2O_3$ (ZCCLCa) bulk ceramics as one of the compositions without liquid phase sintering additive. The results were as follows: when $CaCO_3$ is added to ZCCLCa ($644{\Omega}cm$) acting as a simple ohmic resistor, CaO does not form a secondary phase with ZnO but is mostly distributed in the grain boundary and has excellent varistor characteristics (high nonlinear coefficient ${\alpha}=78$, low leakage current of $0.06{\mu}A/cm^2$, and high insulation resistance of $1{\times}10^{11}{\Omega}cm$). The main defects $Zn_i^{{\cdot}{\cdot}}$ (AS: 0.16 eV, IS & MS: 0.20 eV) and $V_o^{\bullet}$ (AS: 0.29 eV, IS & MS: 0.37 eV) were found, and the grain boundaries had 1.1 eV with electrically single grain boundary. The resistance of each defect and grain boundary decreases exponentially with increasing the measurement temperature. However, the capacitance (0.2 nF) of the grain boundary was ~1/10 lower than that of the two defects (~3.8 nF, ~2.2 nF) and showed a tendency to decrease as the measurement temperature increased. Therefore, ZCCLCa varistors have high sintering temperature of $1,200^{\circ}C$ due to lack of liquid phase additives, but excellent varistor characteristics are exhibited, which means ZCCLCa is a good candidate for realizing chip type or disc type commercial varistor products with excellent performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.561-565
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• 2002

The effects of sintering additives such as $Bi_2O_3$ and $V_2O_5$ on the microwave dielectric and sintering properties of (Zn, Mg)$TiO_3$ system were investigated. Highly dense samples were obtained for $(Zn_{0.8}Mg_{0.2})TiO_3$ at the sintering temperature range of $870{\sim}900^{\circ}C$ with $Bi_2O_3$ and $V_2O_5$ additions of <1wt.%, respectively. The microwave dielectric properties of $(Zn_{0.8}Mg_{0.2})TiO_3$ with 0.45 wt.% $Bi_2O_3$ and 0.55 wt.% $V_2O_5$ sintered at $900^{\circ}C$ were as follows: $Q{\times}f_o$=56,800 GHz, ${\varepsilon}_r$=22, and ${\tau}_f=-53ppm/^{\circ}C$. In order to improve temperature coefficient of resonant frequency, $TiO_2$ was added to the above system. The optimum amount of $TiO_2$ was 15 mol.% when sintered at $870^{\circ}C$, at which we could obtain following results: $Q{\times}f_o$ = 32,800 GHz, ${\varepsilon}_r$ = 26, and $\tau_f=0ppm/^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.604-610
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• 2003

The effects of sintering additives such as B $i_2$ $O_3$ and $V_2$ $O_{5}$ on the microwave dielectric and sintering properties of (Z $n_1$$_{-xM}$ $g_{x}$)Ti $O_3$ system were investigated. Highly dense samples were obtained for (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ at the sintering temperature range of 870~90$0^{\circ}C$ with B $i_2$ $O_3$ and $V_2$ $O_{5}$ additions of 〈1 wt.%, respectively. The microwave dielectric properties of (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ with 0.45 wt.%B $i_2$ $O_3$ and 0.55 wt.% $V_2$ $O_{5}$ sintered at 90$0^{\circ}C$ were as follows : Q$\times$ $f_{o}$ = 50,800 GHz, $\varepsilon$$_{r}$ = 22, and $\tau$$_{f}$ = -53 ppm/$^{\circ}C$. In order to improve temperature coefficient of resonant frequency, Ti $O_2$ was added to the above system. The optimum amount of Ti $O_2$ was 15 moi.% when sintered at 87$0^{\circ}C$, at which we could obtain following results: Q$\times$ $f_{o}$ = 32,800 GHz, $\varepsilon$$_{r}$ = 26, and$\tau$$_{f}$ = 0 ppm/$^{\circ}C$.EX>.EX>.EX>.EX>.EX>.EX>.EX>.

• Transactions on Electrical and Electronic Materials
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• v.11 no.5
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• pp.202-205
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• 2010

In this study, the etch properties of $Al_2O_3$ thin films deposited by atomic layer deposition were investigated as a function of the $O_2$ content in $BCl_3$/Ar inductively coupled plasma. The experiments were performed by comparing the etch rates and selectivity of $Al_2O_3$ over the hard mask materials as functions of the input plasma parameters, such as the gas mixing ratio, DC-bias voltage, ratio-frequency (RF) power and process pressure. The highest obtained etch rate was 477 nm/min at an RF power of 700 W, $O_2$ to $BCl_3$/Ar gas ratio of 15%, DC-bias voltage of -100 V and process pressure of 15 mTorr. The deposition occurred on the surfaces when the amount of $O_2$ added to the $BCl_3$/Ar gas was too high at a low DC-bias voltage or high process pressure. X-ray photoelectron spectroscopy was used to investigate the chemical reactions on the etched surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.955-961
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• 2011

We investigated the physical properties of stoichiometric and non-stoichiometric oxide doped complex perovskite, $Ba(Zn_{1/3}Ta_{2/3})O_3$ ceramics and their impacts on the microwave dielectric performances using various characterization techniques such as X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and network analyzer. According to the measurement of lattice constant changes, anomalous lattice volume contraction of $ZrO_2$ doped $Ba(Zn_{1/3}Ta_{2/3})O_3$ sample only showed the dielectric quality factor enhancements, which was due to the lattice volume contraction as well as the 1:2 B-site cation ordering. In addition, NiO doping was useful to the stabilization of temperature coefficient of resonance frequency.

• Journal of the Korean Ceramic Society
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• v.28 no.12
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• pp.981-988
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• 1991

Various crystal defects such as voids, inclusions dislocations, stacking faults and precipitates were observed in the Czochralski-grown Bi12GeO20 crystals. Particularly, precipitates were found in the whole crystals. The phase of these precipitates was identified as Bi4Ge3O12 by EPMA and transmission electron microscopy. The precipitates were produced by pulling rapidly from a non-stoichiometric charge. During the pulling of Bi12GeO20 crystals, the melt composition of stoichiometric charge was changed Bi-deficent with gradual volatilization of Bi2O3. Precipition of the second phase may have been affected by an abrube thermal stress. By adding excess Bi2O3 into the stoichiometric batch, the precipitation of Bi4Ge3O12 was suppressed. At a pulling speed of 2 mm/hr, clear and precipitate from crystals of Bi12GeO20 were grown from the melt of the Bi2O3 excess charge.