• Journal of the Korean Magnetics Society
• /
• v.16 no.2
• /
• pp.111-114
• /
• 2006

We investigated the magnetism and electronic structures for the layered structures consisting of (110) layers of zinc-blende CrAs and MnAs. We calculated the electronic structures for $(CrAs)_3(MnAs)_3(110)$ superlattice consisted of alternating three layers of CrAs(110) and MnAs(110) by the full-potential linearized augmented plane wave (FLAPW) method. The calculated magnetic moment of Cr in interface layer ($3.07\;\mu_B$) was slightly larger than that of Cr atom in center layer ($3.06\;\mu_B$), while that of interface Mn atom ($3.74\;\mu_B$) was slightly smaller than the value of Mn atom in center layer ($3.76\;\mu_B$). The electronic structure and half-metallicity in this superlattice were discussed using the calculated density of states.

• Bulletin of the Korean Chemical Society
• /
• v.18 no.10
• /
• pp.1105-1108
• /
• 1997

The new amorphous intermetallic compounds, M3(AsTe3)2: M=Cr, Co, Fe, were synthesized by the precipitation reaction of the Zintl anion AsTe33- with the divalent transition metal halides in aqueous solution and analyzed by EDS equipped with SEM and PIXE. The empirical formula of the specimens was found to be Fe3.0As1.8Te5.9, Co3.0As2.1Te6.5, and Cr3.0As2.0Te6.9 by the quantitative elemental analysis. The dc specific resistivity of the materials was measured as a function of temperature in the range from 20 to 300 K, in which their resistivity of Cr3(AsTe3)2 was largely dependent on temperature, while those of Co3(AsTe3)2 and Fe3(AsTe3)2 were only slightly dependent on temperature. To characterize the spin glass state of the specimens, the ac and dc magnetic susceptibility were measured and it was found that Co3(AsTe3)2 and Fe3(AsTe3)2 undergo a transition to a spin glass state at 6 K and 38 K, respectively. Magnetization data are reported as both thermal remanent magnetization (TRM) and isothermal remanent magnetization (IRM) as a function of magnetizing field and temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.1
• /
• pp.1-6
• /
• 2011

Optical gain characteristics of $1.3{\mu}m$ type-II GaAsSb/InGaNAs/GaAs trilayer quantum well structures were studied using multi-band effective mass theory. The results were compared with those of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structures. In the case of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure, the energy difference between the first two subbands in the valence band is smaller than that of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. Also, $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure shows larger optical gain than $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. This means that GaAsSb/InGaNAs/GaAs system is promising as long-wavelength optoelectronic devices for optical communication.

• Journal of the Korean Vacuum Society
• /
• v.18 no.4
• /
• pp.288-295
• /
• 2009

We report the etch characteristics of GaAs and AlGaAs in the diffusion pump-based capacitively coupled $BCl_3$ plasma. Process variables were chamber pressure ($50{\sim}180$ mTorr), CCP power ($50{\sim}200\;W$) and $BCl_3$ gas flow rate ($2.5{\sim}10$ sccm). Surface profilometry was used for etch rate and surface roughness measurement after etching. Scanning electron microscopy was used to analyze the etched sidewall and surface morphology. Optical emission spectroscopy was used in order to characterize the emission peaks of the $BCl_3$ plasma during etching. We have achieved $0.25{\mu}m$/min of GaAs etch rate with only 5 sccm $BCl_3$ flow rate when the chamber pressure was in the range of 50{\sim}130 mTorr. The etch rates of AlGaAs were a little lower than those of GaAs at the conditions. However, the etch rates of GaAs and AlGaAs decreased significantly when the chamber pressure increased to 180 mTorr. GaAs and AlGaAs were not etched with 50 W CCP power. With $100{\sim}200\;W$ CCP power, etch rates of the materials increased over $0.3{\mu}m$/min. It was found that the etch rates of GaAs and AlGaAs were not always proportional to the increase of CCP power. We also found the interesting result that AlGaAs did not etched at 2.5 sccm $BCl_3$ flow rate at 75 mTorr and 100 W CCP power even though it was etched fast like GaAs with more $BCl_3$ gas flow rates. By contrast, GaAs was etched at ${{\sim}}0.3{\mu}m$/min at the 2.5 sccm $BCl_3$ flow rate condition. A broad molecular peak was noticed in the range of $500{\sim}700\;mm$ wavelength during the $BCl_3$ plasma etching. SEM photos showed that 10 sccm $BCl_3$ plama produced more undercutting on GaAs sidewall than 5 sccm $BCl_3$ plasma.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.31-36
• /
• 2003

We investigated dry etching of GaAs and AlGaAs in a high density planar inductively coupled plasma system with $BCl_3$ and $BCl_3/Ar$ gas chemistry. A detailed process study as a function of ICP source power, RIE chuck power and $BCl_3/Ar$ mixing ratio was performed. At this time, chamber pressure was fixed at 7.5 mTorr. The ICP source power and RIE chuck power were varied from 0 to 500 W and from 0 to 150 W, respectively. GaAs etch rate increased with the increase of ICP source power and RE chuck power. It was also found that etch rate of GaAs in $BCl_3$ gas with 25% Ar addition was superior to that of GaAs in a pure $BCl_3$ (20 sccm $BCl_3$) plasma. The result was same with AlGaAs. We expect that high ion-assisted effect in $BCl_3$/Ar plasma increased etch rates of both materials. The GaAs and AIGaAs features etched at 20 sccm $BCl_3$ and $15BCl_3/5Ar$ with 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr showed very smooth surfaces(RMS roughness < 2 nm) and excellent sidewall. XPS study on the surfaces of processed GaAs also proved extremely clean surfaces of the materials after dry etching.

• Journal of Veterinary Clinics
• /
• v.18 no.4
• /
• pp.324-328
• /
• 2001

This study was performed to evaluate the effects of $AS_2O_3$ upon antiangiogenesis in rat cornea, to examine it\`s possible application as an anticancer drug and to provide basic data for further studies of antiangiogenetic mechanism of $AS_2O_3$ . Angiogenesis was induced by cornea micropocket assay, as previously described. Sixteen of forty-eight eyes of Sprague-Dawley rats were randomly assigned to one of three groups, namely, only a bFGF group(control group), and a group treated by $AS_2O_3$ ($AS_2O_3$ group). After pellet implantation, we measured the number of new vessels, vessel length and clock hour of neovascularization, and area of neovascularization was determined using a mathematical formula. New vessels growing began at day 3, number of vessels in $AS_2O_3$ group were significantly more less than those in control group (p<0.05). The length of vessels of $AS_2O_3$ group was significantly shorter than that of control group after day 3(p<0.05). The clock hours of all group were slowly increased at all days but $AS_2O_3$ group was inhibited more than control group. Neovascularization areas of $AS_2O_3$ group were more significantly inhibited than those of control group (p<0.05). This study showed that $AS_2O_3$ had powerful antiangiogenetic effects and it would be useful in the choice of anticancer drug.

• Korean Journal of Materials Research
• /
• v.13 no.10
• /
• pp.635-639
• /
• 2003

We investigated dry etching of GaAs and AiGaAs in a high density planar inductively coupled plasma system with BCl$_3$and BCl$_3$/Ar gas chemistry. A detailed etch process study of GaAs and ALGaAs was peformed as functions of ICP source power, RIE chuck power and mixing ratio of $BCl_3$ and Ar. Chamber process pressure was fixed at 7.5 mTorr in this study. The ICP source power and RIE chuck power were varied from 0 to 500 W and from 0 to 150 W, respectively. GaAs etch rate increased with the increase of ICP source power and RIE chuck power. It was also found that etch rates of GaAs in $15BCi_3$/5Ar plasmas were relatively high with applied RIE chuck power compared to pure 20 sccm $BCl_3$plasmas. The result was the same as AlGaAs. We expect that high ion-assisted effect in $BCl_3$/Ar plasma increased etch rates of both materials. The GaAs and AlGaAs features etched at 20 sccm $BCl_3$and $15BCl_3$/5Ar with 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr showed very smooth surfaces(RMS roughness < 2 nm) and excellent sidewall. XPS study on the surfaces of processed GaAs also proved extremely clean surfaces of the materials after dry etching.

• Korean Journal of Clinical Laboratory Science
• /
• v.38 no.2
• /
• pp.82-86
• /
• 2006

Leukemia arises in hematopoietic progenitor cells and is characterized by impaired or blocked differentiation, uncontrolled proliferation and resistance to apoptosis. Molecular mechanisms underlying cellular functions by $As_2O_3$, however, have been poorly investigated. The consensus of several reports is that $As_2O_3$ induces apoptosis in leukemia cells by activating genes for apoptosis. The present study aimed to investigate the effects of $As_2O_3$ on the cell cycle and its morphological change and a relationship between the caspase-3 and $As_2O_3$-induced apoptosis. Caspase-3 is involved in $As_2O_3$-induced apoptosis in K562 cells. In this study, to address whether $As_2O_3$-induced apoptosis is mediated by caspase-3 activity, the same samples were probed with a specific antibody. The pretreatment of $25{\mu}M$ Z-VAD-fmk, a specific inhibitor of caspase, decreased $As_2O_3$-induced cytotoxicity. And $As_2O_3$ significantly increased the percentages of the cells accumulated in the G2/M phase of the cell cycle in a time- and dose-dependent manner. Chromatin condensational changes were observed with Hoechst 33258 staining after treatment of $As_2O_3$. It was shown that $As_2O_3$-induced apoptosis is controlled through caspase-3 activation. These results may provide a useful rationale for CML treatment.

• Journal of the Korean Chemical Society
• /
• v.67 no.6
• /
• pp.429-440
• /
• 2023

1,1-Dialkyl-2,5-bis(trimethylsilylethynyl)-3,4-diphenylsiloles (R=Et, i-Pr, n-Hex; 3a-c) were prepared and utilized as anode active materials for lithium-ion batteries; 3a was also used as a filler for the solid-state electrolytes (SSE). Siloles 3a-c were prepared by substitution reactions in which the two bromine groups of 1,1-dialkyl-2,5-dibromo-3,4-diphe- nylsiloles, used as precursors, were substituted with trimethylsilylacetylene in the presence of palladium chloride, copper iodide, and triphenylphosphine in diisopropylamine. Among siloles 3a-c, 3a had the best electrochemical properties as an anode material for lithium-ion batteries, including an initial capacity of 758 mAhg^-1 (0.1 A/g), which was reduced to 547 mAhg^-1 and then increased to 1,225 mAhg^-1 at 500 cycles. A 3a-composite polymer electrolyte (3a-CPE) was prepared using silole 3a as an additive at concentrations of 1, 2, 3, and 4 wt.%. The 2 wt.% 3a-CPE composite afforded an excellent ionic conductivity of 1.09 × 10^-3 Scm^-1 at 60℃, indicating that silole 3a has potential applicability as an anode active material for lithium-ion batteries, and can also be used as an additive for the SSE of lithium-ion batteries.

• Proceedings of the Optical Society of Korea Conference
• /
• 1991.06a
• /
• pp.98-101
• /
• 1991

The As2S3 thin film has a characteristics of optical modulation in both amplitude and phase. Since the As2S3 thin film can be used as a real-time reconfigurable optical filter, the fSDF filter can be optically fabricated on it. According to the modulation characteristics of the As2S3, the optimal fSDF filter recorded on this thin plate has the form of continuous amplitude and binary phase. Computer simulation and optical experiments on the optical pattern classification show that the As2S3 is suitable for the optical fSDF filter.