• 한국자기학회지
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• 제16권2호
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• pp.111-114
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• 2006

Zinc-blonde 구조를 가지는 CrAs와 MnAs에서 (110)면 원자층으로 이루어진 초격자의 자성을 제일원리 방법을 이용하여 연구하였다. 이를 위해 CrAs와 MnAs의 (110)층이 각기 세 층씩 교대로 반복되는 $(CrAs)_3(MnAs)_3(110)$ 초격자계의 전자구조를 총 퍼텐셜 선형보강평면파동(FLAPW) 에너지띠 방법을 이용하여 계산하였다. Cr-As로 이루어진 층과 Mn-As로 이루어진 층이 접합되는 계면에 있는 Cr과 Mn원자의 자기모멘트를 계산한 결과 각기 $3.07\;\mu_B$와 $3.74\;\mu_B$로 가운데 층의 Cr과 Mn의 자기모멘트 값인 $3.06\;\mu_B$와 $3.76\;\mu_B$보다 약간 크거나 작았다. 계산된 상태밀도로부터 이 계의 전자구조와 반쪽금속성을 고찰하였다.

• Bulletin of the Korean Chemical Society
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• 제18권10호
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• pp.1105-1108
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• 1997

The new amorphous intermetallic compounds, M3(AsTe3)2: M=Cr, Co, Fe, were synthesized by the precipitation reaction of the Zintl anion AsTe33- with the divalent transition metal halides in aqueous solution and analyzed by EDS equipped with SEM and PIXE. The empirical formula of the specimens was found to be Fe3.0As1.8Te5.9, Co3.0As2.1Te6.5, and Cr3.0As2.0Te6.9 by the quantitative elemental analysis. The dc specific resistivity of the materials was measured as a function of temperature in the range from 20 to 300 K, in which their resistivity of Cr3(AsTe3)2 was largely dependent on temperature, while those of Co3(AsTe3)2 and Fe3(AsTe3)2 were only slightly dependent on temperature. To characterize the spin glass state of the specimens, the ac and dc magnetic susceptibility were measured and it was found that Co3(AsTe3)2 and Fe3(AsTe3)2 undergo a transition to a spin glass state at 6 K and 38 K, respectively. Magnetization data are reported as both thermal remanent magnetization (TRM) and isothermal remanent magnetization (IRM) as a function of magnetizing field and temperature.

• 한국전기전자재료학회논문지
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• 제24권1호
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• pp.1-6
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• 2011

Optical gain characteristics of $1.3{\mu}m$ type-II GaAsSb/InGaNAs/GaAs trilayer quantum well structures were studied using multi-band effective mass theory. The results were compared with those of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structures. In the case of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure, the energy difference between the first two subbands in the valence band is smaller than that of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. Also, $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure shows larger optical gain than $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. This means that GaAsSb/InGaNAs/GaAs system is promising as long-wavelength optoelectronic devices for optical communication.

• 한국진공학회지
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• 제18권4호
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• pp.288-295
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• 2009

본 논문은 확산펌프 기반의 축전 결합형 $BCl_3$ 플라즈마를 사용하여 GaAs와 AlGaAs를 건식 식각한 연구에 관한 것이다. 실험에서 사용한 압력 범위는 $50{\sim}180$ mTorr, CCP 파워는 $50{\sim}200\;W$, $BCl_3$ 가스 유량은 $2.5{\sim}10$ sccm 이었다. 식각 후에 GaAs와 AlGaAs의 식각 속도와 표면 거칠기분석은 표면 단차 측정기를 이용하여 하였다. GaAs의 식각 벽면과 표면 상태는 전자현미경으로 분석하였다. 식각 중 플라즈마의 광 특성 분석은 광학 발광 분석기를 이용하였다. 본 실험을 통하여 5 sccm의 소량의 $BCl_3$ 가스 유량으로 공정 압력이 130 mTorr이내인 경우에는, 100 W CCP 파워의 조건에서 GaAs는 약 $0.25{\mu}m$/min 이상의 우수한 식각 속도를 얻을 수 있었다. AlGaAs의 경우는 GaAs의 식각 속도보다 조금 낮았다. 그러나 같은 유량에서 공정압력이 180 mTorr로 높아지면 GaAs와 AlGaAs의 식각 속도가 급격히 감소하여 거의 식각되지 않는 것을 알 수 있었다. 또한 CCP 파워의 경우에는 50 W의 파워에서는 GaAs와 AlGaAs 모두 거의 식각되지 않았다. 그러나 $100{\sim}200\;W$의 조건에서는 $0.3{\mu}m$/min 이상의 높은 식각 속도를 주었다. 두 결과를 보았을 때 축전결합형 $BCl_3$ 플라즈마 식각에서 GaAs와 AlGaAs의 식각 속도는 CCP 파워가 $100{\sim}200\;W$ 범위에 있으면 그 값에 비례하지 않고 거의 일정한 값이 된다는 사실을 알았다. 75mTorr, 100 W의 CCP 파워 조건에서 $BCl_3$의 유량 변화에 따른 GaAs와 AlGaAs의 식각 속도의 경우, $BCl_3$의 유량이 2.5 sccm의 소량일 때는 GaAs는 식각 속도가 높았지만 AlGaAs는 거의 식각되지 않는 흥미로운 결과를 얻었다. 플라즈마 발광 특성을 보면 $BCl_3$ 축전 결합 플라즈마는 주로 $500{\sim}700\;mm$ 범위를 가지는 넓은 분자 피크만 만든다는 것을 알 수 있었다. 전자 현미경 사진 결과에서는 5 sccm과 10 sccm의 $BCl_3$ 플라즈마 모두 식각 중에 GaAs의 벽면을 언더컷팅 하였으며, 10 sccm의 $BCl_3$유량을 사용하였을 때 언더컷팅이 더 심했다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.31-36
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• 2003

We investigated dry etching of GaAs and AlGaAs in a high density planar inductively coupled plasma system with $BCl_3$ and $BCl_3/Ar$ gas chemistry. A detailed process study as a function of ICP source power, RIE chuck power and $BCl_3/Ar$ mixing ratio was performed. At this time, chamber pressure was fixed at 7.5 mTorr. The ICP source power and RIE chuck power were varied from 0 to 500 W and from 0 to 150 W, respectively. GaAs etch rate increased with the increase of ICP source power and RE chuck power. It was also found that etch rate of GaAs in $BCl_3$ gas with 25% Ar addition was superior to that of GaAs in a pure $BCl_3$ (20 sccm $BCl_3$) plasma. The result was same with AlGaAs. We expect that high ion-assisted effect in $BCl_3$/Ar plasma increased etch rates of both materials. The GaAs and AIGaAs features etched at 20 sccm $BCl_3$ and $15BCl_3/5Ar$ with 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr showed very smooth surfaces(RMS roughness < 2 nm) and excellent sidewall. XPS study on the surfaces of processed GaAs also proved extremely clean surfaces of the materials after dry etching.

• 한국임상수의학회지
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• 제18권4호
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• pp.324-328
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• 2001

This study was performed to evaluate the effects of $AS_2O_3$ upon antiangiogenesis in rat cornea, to examine it\`s possible application as an anticancer drug and to provide basic data for further studies of antiangiogenetic mechanism of $AS_2O_3$ . Angiogenesis was induced by cornea micropocket assay, as previously described. Sixteen of forty-eight eyes of Sprague-Dawley rats were randomly assigned to one of three groups, namely, only a bFGF group(control group), and a group treated by $AS_2O_3$ ($AS_2O_3$ group). After pellet implantation, we measured the number of new vessels, vessel length and clock hour of neovascularization, and area of neovascularization was determined using a mathematical formula. New vessels growing began at day 3, number of vessels in $AS_2O_3$ group were significantly more less than those in control group (p<0.05). The length of vessels of $AS_2O_3$ group was significantly shorter than that of control group after day 3(p<0.05). The clock hours of all group were slowly increased at all days but $AS_2O_3$ group was inhibited more than control group. Neovascularization areas of $AS_2O_3$ group were more significantly inhibited than those of control group (p<0.05). This study showed that $AS_2O_3$ had powerful antiangiogenetic effects and it would be useful in the choice of anticancer drug.

• 한국재료학회지
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• 제13권10호
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• pp.635-639
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• 2003

We investigated dry etching of GaAs and AiGaAs in a high density planar inductively coupled plasma system with BCl$_3$and BCl$_3$/Ar gas chemistry. A detailed etch process study of GaAs and ALGaAs was peformed as functions of ICP source power, RIE chuck power and mixing ratio of $BCl_3$ and Ar. Chamber process pressure was fixed at 7.5 mTorr in this study. The ICP source power and RIE chuck power were varied from 0 to 500 W and from 0 to 150 W, respectively. GaAs etch rate increased with the increase of ICP source power and RIE chuck power. It was also found that etch rates of GaAs in $15BCi_3$/5Ar plasmas were relatively high with applied RIE chuck power compared to pure 20 sccm $BCl_3$plasmas. The result was the same as AlGaAs. We expect that high ion-assisted effect in $BCl_3$/Ar plasma increased etch rates of both materials. The GaAs and AlGaAs features etched at 20 sccm $BCl_3$and $15BCl_3$/5Ar with 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr showed very smooth surfaces(RMS roughness < 2 nm) and excellent sidewall. XPS study on the surfaces of processed GaAs also proved extremely clean surfaces of the materials after dry etching.

• 대한임상검사과학회지
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• 제38권2호
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• pp.82-86
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• 2006

Leukemia arises in hematopoietic progenitor cells and is characterized by impaired or blocked differentiation, uncontrolled proliferation and resistance to apoptosis. Molecular mechanisms underlying cellular functions by $As_2O_3$, however, have been poorly investigated. The consensus of several reports is that $As_2O_3$ induces apoptosis in leukemia cells by activating genes for apoptosis. The present study aimed to investigate the effects of $As_2O_3$ on the cell cycle and its morphological change and a relationship between the caspase-3 and $As_2O_3$-induced apoptosis. Caspase-3 is involved in $As_2O_3$-induced apoptosis in K562 cells. In this study, to address whether $As_2O_3$-induced apoptosis is mediated by caspase-3 activity, the same samples were probed with a specific antibody. The pretreatment of $25{\mu}M$ Z-VAD-fmk, a specific inhibitor of caspase, decreased $As_2O_3$-induced cytotoxicity. And $As_2O_3$ significantly increased the percentages of the cells accumulated in the G2/M phase of the cell cycle in a time- and dose-dependent manner. Chromatin condensational changes were observed with Hoechst 33258 staining after treatment of $As_2O_3$. It was shown that $As_2O_3$-induced apoptosis is controlled through caspase-3 activation. These results may provide a useful rationale for CML treatment.

• 대한화학회지
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• 제67권6호
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• pp.429-440
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• 2023

1,1-Dialkyl-2,5-bis(trimethylsilylethynyl)-3,4-diphenylsiloles (R=Et, i-Pr, n-Hex; 3a-c) were prepared and utilized as anode active materials for lithium-ion batteries; 3a was also used as a filler for the solid-state electrolytes (SSE). Siloles 3a-c were prepared by substitution reactions in which the two bromine groups of 1,1-dialkyl-2,5-dibromo-3,4-diphe- nylsiloles, used as precursors, were substituted with trimethylsilylacetylene in the presence of palladium chloride, copper iodide, and triphenylphosphine in diisopropylamine. Among siloles 3a-c, 3a had the best electrochemical properties as an anode material for lithium-ion batteries, including an initial capacity of 758 mAhg^-1 (0.1 A/g), which was reduced to 547 mAhg^-1 and then increased to 1,225 mAhg^-1 at 500 cycles. A 3a-composite polymer electrolyte (3a-CPE) was prepared using silole 3a as an additive at concentrations of 1, 2, 3, and 4 wt.%. The 2 wt.% 3a-CPE composite afforded an excellent ionic conductivity of 1.09 × 10^-3 Scm^-1 at 60℃, indicating that silole 3a has potential applicability as an anode active material for lithium-ion batteries, and can also be used as an additive for the SSE of lithium-ion batteries.

• 한국광학회:학술대회논문집
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• 한국광학회 1991년도 제6회 파동 및 레이저 학술발표회 Prodeedings of 6th Conference on Waves and Lasers
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• pp.98-101
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• 1991

The As2S3 thin film has a characteristics of optical modulation in both amplitude and phase. Since the As2S3 thin film can be used as a real-time reconfigurable optical filter, the fSDF filter can be optically fabricated on it. According to the modulation characteristics of the As2S3, the optimal fSDF filter recorded on this thin plate has the form of continuous amplitude and binary phase. Computer simulation and optical experiments on the optical pattern classification show that the As2S3 is suitable for the optical fSDF filter.