Mechanism of infinite $Si_3N_4/ArF$ PR etch selectivity during $CH_2F_2/H_2/Ar$ dual frequency capacitively coupled plasma etching of Si3N4 layers
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- 한국진공학회:학술대회논문집
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- 한국진공학회 2006년도 제31회 학술논문발표회 초록집
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- pp.128-128
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- 2006