• 한국세라믹학회지
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• 제19권4호
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• pp.275-280
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• 1982

This study was carried out to research the change of mineral phases and the characteristics (apparent specific gravity, water absorption, firing shrinkage and thermal expansion etc) of the sintered bodies composed of larnite, wollastonite and anorthite etc. in $CaO-Al_2O_3-SiO_2$ system. Test bodies were composed of the same theoretical composition as it of anorthite and fired up to $1450^{\circ}C$. Investigated the change and micro-structure of the mineral phases by XRD and SEM, the characteristics of the sintered bodies by DTA/TGA and etc. The results were as follows. 1. The sintering temperature had a higher about $60^{\circ}C$ than that of $CaO-SiO_2$ system because of coexisting $Al_2O_3$. 2. The formation and transition temperature of $\beta$-wol lastonite and $\alpha$-wollastonite were similar to the results of $CaO-SiO_2$ system. 3. The formed larnite and wollastonite were decomposed and melted at about $1260^{\circ}C$. 4. Anorthite began to be synthesized at $1140^{\circ}C$, its quantity was repidly increased according to the temperature rising.

• 한국표면공학회지
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• 제36권2호
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• pp.128-134
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• 2003

Alloys of Ti-43%Al-2%W-0.1%Si were oxidized isothermally and cyclically between $900^{\circ}C$ and$ 1050^{\circ}C$, and their oxidation characteristics were studied. During isothermal tests, the alloys oxidized slowly up to 100$0^{\circ}C$, but fast at $1050^{\circ}C$. Though the scale adherence was not good above $900^{\circ}C$, the alloys displayed better oxidation behavior than unalloyed TiAl alloys. The oxide scales consisted primarily of an outer $TiO_2$ layer, intermediate $Al_2$$O_3$-rich layer, and an inner mixed layer of (TiO$_2$ $+Al_2$$O_3$). Tungsten was present mainly at the lower part of the oxide scale, while Si over the whole oxide scale.

• 한국세라믹학회지
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• 제18권1호
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• pp.41-47
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• 1981

The sintering characteristics of the SiC-Clay-Kaolin chamotte system were studied by addition of $Al_2O_3$ for the manufacture of silicate-bonded silicon carbide refractories at $1350^{\circ}C$. The sinterbilit of SiC-Binder mixture was measured by apparent porosity and compressive strength. And its mineral compositions were identified with X-ray diffractometer. The following results were obtained; 1) Optimum amount of mixed clay ($\textrm{Al}_2\textrm{O}_3$ 40 wt% mixed) as a binder was about 25wt% 2) Appropriate mixing ratio of mixed Kaolin chamotte ($\textrm{Al}_2\textrm{O}_3$ 40wt% mixed) was about 30wt% in the clay Kaolin chamotte binder. 3) Variation of apparent porosity and compressive strength of sintered SiC-binder mixture fired at $1350^{\circ}C$ were due to the sinterbility of clay.

• 반도체디스플레이기술학회지
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• 제14권4호
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• pp.45-49
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• 2015

Using a combined CVD and ALD equipment system, multi-layer quantum well structures of $Al_2O_3/a-Si/Al_2O_3$ were fabricated on silicon Schottky junction devices and implemented to quantum well solar cells, in which the 1~1.5 nm thicknesses of the aluminum oxide films and the a-Si thin film layers were deposited at $300^{\circ}C$ and $450^{\circ}C$, respectively. Fabricated solar cell was operated by tunneling phenomena through the inserted quantum well structure being generated electrons on the silicon surface. Efficiency of the fabricated solar cell inserted with multi-quantum well of 41 layers has been increased by about 10 times that of the solar cell of pure Schottky junction solar cell.

• Korean Chemical Engineering Research
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• 제55권3호
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• pp.436-442
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• 2017

Fischer-Tropsch 합성(F-T 합성)은 석탄, 바이오매스, 천연가스 등을 개질하여 얻은 합성 가스(CO, $H_2$)를 촉매를 이용하여 탄화수소로 전환 하는 기술이다. Fischer-Tropsch 합성에 이용되는 촉매는 활성 금속, 조촉매, 지지체로 구성되는데 이들의 종류와 조성은 반응의 활성 및 생성물 선택도에 영향을 미친다. 본 연구에서는 ${\gamma}-Al_2O_3$와 $SiO_2$ 혼합 지지체의 조성이 Fiscsher-Tropsch 반응의 활성과 생성물 선택도에 미치는 영향을 알아 보기위해, ${\gamma}-Al_2O_3/SiO_2$ 혼합 지지체를(100/0 wt%, 75/25 wt%, 50/50 wt%, 25/75 wt%, 0/100 wt%) 이용하여 함침(impregnation)법으로 철 촉매를 제조하였다. 촉매의 물리적 특성은 질소 물리 흡착 법과 X-선 회절 분석법을 통해 분석 하였고, 고정층 반응기에서 Fischer-Trosch 반응을 $300^{\circ}C$, 20bar에서, 60시간 동안 수행 하였다. 촉매의 물리적 특성 분석 결과 촉매의 BET 표면적은 ${\gamma}-Al_2O_3$의 조성이 감소함에 따라 감소하였으며, 촉매 기공의 부피 및 평균 크기는 지지체 조성이 ${\gamma}-Al_2O_3/SiO_2$ (50/50 wt%)인 경우를 제외 하고 증가하는 경향을 보였다. 또한, X-선 회절 분석법을 통해 ${\alpha}-Fe_2O_3$의 입자 크기를 계산한 결과 ${\gamma}-Al_2O_3$의 조성이 감소함에 따라 입자 크기가 감소 하였다. Fischer-Tropsch 합성 결과 ${\gamma}-Al_2O_3$의 조성이 감소함에 따라 CO 전환율은 감소 하였으며, C1-C4의 선택도는 ${\gamma}-Al_2O_3$의 조성이 25 wt%일 때 까지 감소하였으며 이와 반대로, C5+의 선택도는 ${\gamma}-Al_2O_3$의 조성이 25 wt%일 때 까지 증가 하였다.

• 한국결정성장학회지
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• 제7권4호
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• pp.610-618
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• 1997

반응용침법으로 제조된 $Al_2O_3$/Al 복합재료는 900-$1200^{\circ}C$의 온도범위에서 $Al_2O_3$ 분말성형체에 용융Al을 침투시켜 제조하였다. 용융침투는 각 온도에서 잠복기를 거친후 발생하였으며, 복합재료의 성장속도는 시간에 따라 선형적으로 비례하였다. 제조된 복합재료의 주성분은 $Al_2$O$_3$와 Al이었고 소량의 Si이 탐지되었다. 복합재료의 상대밀도는 $Al_2O_3$ 입자크기가 증가함에 따라 증가하였고 용융 침투온도가 높을수록 감소하였다.

• 한국세라믹학회지
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• 제20권1호
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• pp.37-42
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• 1983

An attempt was made to derive a possible synthetic mechanism of Fluoro-phlogopite (Mica, 4Mg.$Al_2O_3$.$6SiO_2$.$K_2O$.$2MgF_2$) The pevention of fluorine vaporization turned out to be the key in the synthesis of Mica in question.l Consequently the quinary system of Mica was seperately synthesized ; frist 4MgO.$Al_2O_3-6SiO_2$(ternary system) was sintered at 135$0^{\circ}C$ and $K_2O$ and $MgF_2$ were added and second 4MgO.$Al_2O_3-6SiO_2$.$K_2O$ (quarternary system) was heat-treated at 135$0^{\circ}C$ and $MgF_2$ was added. The ternary system resulted in Proto-enstatite Cordierite and Spinel phases while Forsterite and Leucite were shown in the quarternay system . In both methods Fluoro-phlogopite was systhesized but the solid state reactions to form Mica from the ternary system and the quarternary system were different. High temperature reactions in the formation of Mica were investigated employing XRD, DTA and SEM The study of the synthesis of Mica indirectly suggested a method of phase analysis of quinary system(MgO-$Al_2O_3-SiO_2-K_2O-MgF_2$) and quarternary system(MgO-$Al_2O_3-SiO_2-K_2O-MgF_2$) at various temperatures.

• Composites Research
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• 제16권1호
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• pp.1-12
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• 2003

본 연구는 보강재의 부피분율이 49%, 56%, 63%첨가된 패키징용 SiC/Al복합재료를 가압주조법을 통해 개발하였다. SiC/Al복합재료는 0.8%의 무기성형제와 $Al_2$O$_3$섬유가 SiC입자에 비해 부피비 1:10의 비율로 첨가되었으며 새로이 고안된 몰드에서 제조되었다. 제조된 SiC/Al복합재료에 대해 30-300 구간에서 열팽창 계수를 측정하고, FEM수치해석과 비교하여 온도에 따른 특성을 분석하였다. 실험결과 SiC/Al복한재료의 열팽창계수는 혼합법칙, Turner모델의 중간값을 가졌으며 상온에서는 Turner모델에 가깝다가 온도가 높아질수록 혼합법칙에 가까와졌다. 이러한 특성은 모재의 소성변형 및 잔류응력에 의한 것으로 본 연구에서 제안한 모재와 보강재 사이에 작용하는 평균응력 차이로부터 분석이 된다. 해석결파 모재의 소성변형이 시작되는 온도에서 SiC/Al복합재료의 열팽창계수가 급격히 증가하였으며, 가공 잔류응력은 이러한 소성변형의 시작온도를 고온으로 이동시킴으로써 열팽창계수에 영향을 끼침을 밝혔다. 이러한 일련의 연구를 통해 온도에 따른 열팽창 특성은 복수입자모델에 의한 2차인 해석을 통해 성공적으로 분석됨을 보였다.

• 한국결정성장학회지
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• 제6권2호
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• pp.275-285
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• 1996

The effect of heat-treatment on catalytic crystallization in $LI_2O-Al_2O_3-SiO_2$ glass system over its glass transition temperature was investigated. Glass composition $4Li_2O{cdot}22AL_2O_3{cdot}66SiO_2{cdot}2TiO_2{cdot}2.5ZrO_2{cdot}1.5P_2O_5{cdot}1.0Na_2O{cdot}1.0As_2O_3$ (wt%) was selected and heat-treated at different heating conditions to obtain transparent glass-ceramic. Nucleation and crystallization behaviour of this composition were estimated by differential thermal analysis (DTA) and X-ray diffractometer (XRD) and its thermal expansion coefficients were measured by Dilatometer. As a result, glass transition temperature was $730^{\circ}C$ and two maximum nucleation temperatures were estimated at $730^{\circ}C$ and 82$0^{\circ}C$ using JMA(Johson-Mehl-Avrami) equation by DTA. $ZrTiO_4$ $\beta$-Quartz solid solution and $\beta$-Spodumene crystals were identified by XRD. The optimum crystallization temperature was 92$0^{\circ}C$ and three step heating schedule was expected to be useful to obtain transparent glass-ceramic.

• KIEE International Transactions on Electrophysics and Applications
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• 제3C권2호
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• pp.66-69
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• 2003

Various semiconductor nanowires such as GaN, GaP, InP, Si$_3$N$_4$, SiO$_2$/Si, and SiC were coated conformally with aluminum oxide (Al$_2$O$_3$) layers by atomic layer deposition (ALD) using trimethylaluminum (TMA) and distilled water ($H_2O$) at a temperature of 20$0^{\circ}C$. Transmission electron microscopy (TEM) revealed that A1203 cylindrical shells conformally coat the semiconductor nanowires. This study suggests that the ALD of $Al_2$O$_3$ on nanowires is a promising method for preparing cylindrical dielectric shells for coaxially gated nanowire field-effect transistors.