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Fabrication and Properties of Silicon Solar Cells using Al2O3/Si/Al2O3 Structures  

Kim, Kwang-Ho (Department of Solar Energy and Engineering, Cheongju University)
Publication Information
Journal of the Semiconductor & Display Technology / v.14, no.4, 2015 , pp. 45-49 More about this Journal
Abstract
Using a combined CVD and ALD equipment system, multi-layer quantum well structures of $Al_2O_3/a-Si/Al_2O_3$ were fabricated on silicon Schottky junction devices and implemented to quantum well solar cells, in which the 1~1.5 nm thicknesses of the aluminum oxide films and the a-Si thin film layers were deposited at $300^{\circ}C$ and $450^{\circ}C$, respectively. Fabricated solar cell was operated by tunneling phenomena through the inserted quantum well structure being generated electrons on the silicon surface. Efficiency of the fabricated solar cell inserted with multi-quantum well of 41 layers has been increased by about 10 times that of the solar cell of pure Schottky junction solar cell.
Keywords
Silicon solar cell; Schottky junction solar cell; $Al_2O_3/a-Si/Al_2O_3$ structure; Combined CVD and ALD equipment; Quantum well solar cell;
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Times Cited By KSCI : 3  (Citation Analysis)
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