• 한국전기전자재료학회논문지
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• 제30권8호
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• pp.484-490
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• 2017

We investigated the rewritable operation of a non-volatile memory device composed of Al (top)/$TiO_2$/indium-zinc-oxide (IZO)/Al (bottom). The oxygen-deficient IZO layer of the device was spin-coated with 0.1 M indium nitrate hydrate and 0.1 M zinc acetate dehydrate as precursor solutions, and the $TiO_2$ layer was fabricated by atomic layer deposition. The oxygen vacancies IZO layer of an active component annealed at $400^{\circ}C$ using thermal annealing and it was proven to be in oxygen vacancies and oxygen binding environments with OH species and heavy metal ions investigated by X-ray photoelectron spectroscopy. The device, which operates at low voltages (less than 3.5 V), exhibits non-volatile memory behavior consistent with resistive-switching properties and an ON/OFF ratio of approximately $3.6{\times}10^3$ at 2.5 V.

• 한국진공학회지
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• 제15권2호
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• pp.173-179
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• 2006

Pulsed laser deposition 방법으로 증착한 $PbZr_{0.3}Ti_{0.7}O_{3}$ (PZT)박막의 구조적, 전기적 성질에 대한 연구를 하였다. PZT 박막은 $LaAlO_3$ 기판위에 동일한 조건으로 증착된 $LaMnO_3$ (LMO) 산화물을 하부 전극으로 하여 증착시간을 변화시키며 증착하였다. High-resolution x-ray diffraction 결과를 통해 LMO 하부 전극과 PZT 박막이 방향성 있게 자란 것을 확인할 수 있었고 박막의 두께는 field-emission scanning electron microscope을 통하여 측정할 수 있었다. 또한 우리는 atomic force microscopy을 이용하여 박막의 표면 거칠기를 구하였고 국소적인 범위의 전기적 특성은 piezoelectric force microscopy 모드를 이용하여 측정하였다. 그 결과 PZT/LMO 구조는 나노 스토리지의 미디어로 쓰이기 위해 필요한 성질들을 갖추었음을 알 수 있었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.104.2-104.2
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• 2012

이종 재료의 접합에 대한 연구는 단일 재료에서 얻을 수 없는 물리적/기계적 특성과 이종 재료의 우수한 특성을 얻을 수 있다는 장점이 있어 국내외 적으로 연구가 활발히 진행되고 있다. 이러한 이종 접합 기술은 구조재료와 에너지 변환분야에 가장 많이 사용되고 있으며, 그 외 광촉매와 Thin film, 경량구조재료 등에도 사용되고 있다. 그 중 FGM(Functional Graded Materials)는 조성의 점진적인 변화를 통하여 접합하는 방법으로 이종 재료 접합 시 발생하는 내부 응력을 해소해줌으로써 적합한 방법이라고 할 수 있다. FGM 제작에 사용되는 방법으로 널리 알려진 것들로는 plasma spraying, 원심주조, 분말 야금법, PVD, CVD 그리고 EPD(electrophoretic deposition) 등이 있다. 이중에서 EPD는 수용액이나 유기용매와 같은 분산매체 중에 콜로이드 입자의 표면에 대전되는 전하를 이용하여, 외부에서 전장을 걸어서 입자의 움직임을 제어하는 기술이다 EPD는 코팅 속도가 상대적으로 빠르고 두꺼운 코팅 층 제작이 가능하다. 또한 바인더, 윤활제 또는 가소제를 사용하지 않고 다양한 종류와 모양의 기판 위에 균일한 코팅이 가능하다는 장점이 있다. 본 연구에서는 Ni substrate를 이용하여 그 위에 Ni과 $Al_2O_3$의 조성을 점진적으로 변화시켜 FGM을 EPD 방법으로 코팅하였다. 여기서 사용된 Ni은 높은 녹는점과 좋은 연성으로 인해 성형이 용이하여 구조재료로 적합하며, $Al_2O_3$는 고내열성과 내부식성을 가지며 경도가 높다는 장점이 있다. 본 연구에서는 EPD 방식을 이용하여 Ni/$Al_2O_3$ FGM을 코팅하였으며, 코팅 후 발생하는 substrate와의 접착력 문제를 해결하기 위해서 건조 방식과 substrate의 표면 상태를 최적화하여 다층의 Ni/$Al_2O_3$ FGM을 코팅 및 소결하였다. Zeta-potential 측정을 통해 electrophoretic mobility와 suspension의 분산 안정도를 평가 할 수 있었으며, X-ray 회절 분석(XRD)을 통하여 Ni 의 환원 여부를 확인하였다. 또한 Scanning electron microscopy(SEM) 분석을 통하여 미세구조 분석을 하였고, 최종적으로 Electron Probe Micro Analyzer (EPMA) 를 이용하여 다층 구조의 조성변화를 확인함으로 Ni/$Al_2O_3$의 FGM 코팅이 이루어졌음을 확인하였다.

• 한국전기전자재료학회논문지
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• 제25권10호
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• pp.805-810
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• 2012

Transparent conducting oxides (TCOs) have wide range of application areas in transparent electrode for display devices, Transparent coating for solar energy heat mirrors, and electromagnetic wave shield. $SnO_2$ is intrinsically an n-type semiconductor due to oxygen deficiencies and has a high energy-band gap more than 3.5 eV. It is known as a transparent conducting oxide because of its low resistivity of $10^{-3}{\Omega}{\cdot}cm$ and high transmittance over 90% in visible region. In this study, co-doping effects of Al and Y on the properties of $SnO_2$ were investigated. The addition of Y in $SnO_2$ was tried to create oxygen vacancies that increase the diffusivity of oxygen ions for the densification of $SnO_2$. The addition of Al was expected to increase the electron concentration. Once, we observed solubility limit of $SnO_2$ single-doped with Al and Y. $\{(x/2)Al_2O_3+(x/2)Y_2O_3\}-SnO_2$ was used for the source of Al and Y to prevent the evaporation of $Al_2O_3$ and for the charge compensation. And we observed the valence changes of aluminium oxide because generally reported of valence changes of aluminium oxide in Tin - Aluminium binary system. The electrical properties, solubility limit, densification and microstructure of $SnO_2$ co-doped with Al and Y will be discussed.

• Bulletin of the Korean Chemical Society
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• 제34권1호
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• pp.95-98
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• 2013

The photoluminescence (PT) properties of Al-doped ZnO thin films grown by the sol-gel dip-coating method have been investigated. At 12 K, nine distinct PL peaks were observed at 2.037, 2.592, 2.832, 3.027, 3.177, 3.216, 3.260, 3.303, and 3.354 eV. The deep-level emissions (2.037, 2.592, 2.832, and 3.027 eV) were attributed to native defects. The near-band-edge (NBE) emission peaks at 3.354, 3.303, 3.260, 3.216, and 3.177 eV were attributed to the emission of the neutral-donor-bound excitons ($D^0X$), two-electron satellite (TES), free-to-neutral-acceptors (e,$A^0$), donor-acceptor pairs (DAP), and second-order longitudinal optical (2LO) phonon replicas of the TES (TES-2LO), respectively. According to Haynes' empirical rule, we calculated the energy of a free exciton (FX) to be 3.374 eV. The thermal activation energy for $D^0X$ in the nanocrystalline ZnO thin film was found to be ~25 meV, corresponding to the thermal dissociation energy required for $D^0X$ transitions.

• 한국전기전자재료학회논문지
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• 제17권5호
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• pp.467-475
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• 2004

ZnO epilayer were synthesized by the pulsed laser deposition(PLD) process on $Al_2$ $O_3$substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A $l_2$ $O_3$) substrate at a temperature of 400 $^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are 8.27${\times}$$10^{16}$$cm^{-3}$ and 299 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}$(T)= 3.3973 eV - (2.69 ${\times}$ 10$_{-4}$ eV/K) $T^2$(T＋463k). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$ , $V_{o}$ , Z $n_{int}$, and $O_{int}$ obtained by PL measurements were classified as a donors or accepters type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/A $l_2$ $O_3$did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.s.s.s.

• 한국전자통신학회논문지
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• 제9권11호
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• pp.1311-1316
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• 2014

본 논문의 X-대역 25W 전력증폭기 모듈은 위성통신용 지상단말기의 송신기에 사용되는 것으로, 정지궤도 36,000Km 통신위성에 송신하기 위한 송출장비인 고출력증폭기를 구성하는 일부분이다. 지상단말에서 사용하는 고출력증폭기는 총 4개의 전력증폭기 모듈이 연계구조형으로 구성되어 고출력의 특성을 갖는다. 연계구조형에 사용된 전력증폭기 모듈 4개중에 각 모듈은 순차구조형(Serial Combining Structure)으로 구성된다. 이 전력증폭기 모듈은 Hybrid 기법을 이용하여 10개의 MMIC 전력 증폭기 칩과 Al2O3 박막 기판으로 제작한 회로를 결합하여 PAM(Power Amplifier Module)을 구성함으로써 X-대역 운용주파수에서 출력전력 25W의 전력증폭기 모듈을 구현하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.283-283
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• 2011

The n-doping effect by doping metal carbonate into an electron-injecting organic layer can improve the device performance by the balanced carrier injection because an electron ohmic contact between cathode and an electron-transporting layer, for example, a high current density, a high efficiency, a high luminance, and a low power consumption. In the study, first, we investigated an electron-ohmic property of electron-only device, which has a ITO/$Rb_2CO_3$-doped $C_{60}$/Al structure. Second, we examined the I-V-L characteristics of all-ohmic OLEDs, which are glass/ITO/$MoO_x$-doped NPB (25%, 5 nm)/NPB (63 nm)/$Alq_3$ (32 nm)/$Rb_2CO_3$-doped $C_{60}$(y%, 10 nm)/Al. The $MoO_x$doped NPB and $Rb_2CO_3$-doped fullerene layer were used as the hole-ohmic contact and electron-ohmic contact layer in all-ohmic OLEDs, respectively, Third, the electronic structure of the $Rb_2CO_3$-doped $C_{60}$-doped interfaces were investigated by analyzing photoemission properties, such as x-ray photoemission spectroscopy (XPS), Ultraviolet Photoemission spectroscopy (UPS), and Near-edge x-ray absorption fine structure (NEXAFS) spectroscopy, as a doping concentration at the interfaces of $Rb_2CO_3$-doped fullerene are changed. Finally, the correlation between the device performance in all ohmic devices and the interfacial property of the $Rb_2CO_3$-doped $C_{60}$ thin film was discussed with an energy band diagram.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.290-291
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• 2006

We prepared the multilayer with Al doped ZnO (AZO)/Ag/AZO structure. The multilayer were deposited with various thickness of Ag layer on glass substrates at room temperature by using facing targets sputtering (FTS) method. To investigate the electrical, optical and structural properties, we used Hall Effect measurement system, four-point probes. UV-VIS spectrometer with a wavelength of 300 - 100nm, X-ray Diffractometer(XRD) and scanning electron microscopy (SEM). We obtained multilayer thin film with the low resistivity $5,9{\times}10^{-5}{\Omega}cm$ and the average transmittance of 86% m the visible range (400 - 800nm).

• 한국재료학회지
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• 제15권5호
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• pp.293-300
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• 2005

ZnO:Li epilayers were synthesized on sapphire substrates by the pulesd laser deposition (PLD) after the surface of the ZnO:Li sintered pellet was irradiated by the ArF (193 nm) excimer laser. The growth temperature was fixed at $400^{\circ}C$. The crystalline structure of epilayers was investigated by the photoluminescence (PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of epilayers measured by van der Pauw-Hall method are $2.69\times10cm^{-3}$ and $52.137cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of epilayers obtained from the absorption spectra is well described by the Varshni's relation, $E_g(T)=3.5128eV{\cdot}(9.51\times10^{-4}eV/K)T^2/(T+280K)$. After the as-grown ZnO:Li epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO:Li has been investigated by PL at 10 K. The Peaks of native defects of $V_{zn},\;V_o,\;Zn_{int},\;and\;O_{int}$ showned on PL spectrum are classified as a donors or accepters type. We confirm that $ZnO:Li/Al_2O_3$ in vacuum do not form the native defects because ZnO:Li epilayers in vacuum existe in the form of stable bonds.