• 제목/요약/키워드: $AgSO_4$

검색결과 224건 처리시간 0.024초

무전해 도금법을 이용한 전자소재용 은-구리 복합분말의 제조 (Synthesis of Ag-Cu Composite Powders for Electronic Materials by Electroless Plating Method)

  • 윤치호;안종관;김동진;손정수;박제신;안양규
    • 한국분말재료학회지
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    • 제15권3호
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    • pp.221-226
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    • 2008
  • Silver coated copper composite powders were prepared by electroless plating method by controlling the activation and deposition process variables such as feeding rate of silver ions solution, concentration of reductant and molar ratio of activation solution $(NH_4OH/(NH_4)_2SO_4)$ at room temperature. The characteristics of the product were verified by using a scanning electron microscopy (SEM), X-ray diffraction (XRD) and atomic absorption (A.A.). It is noted that completely cleansing the copper oxide layers and protecting the copper particles surface from hydrolysis were important to obtain high quality Ag-Cu composite powders. The optimum conditions of Ag-Cu composite powder synthesis were $NH_4OH/(NH_4)_2SO_4$ molar ratio 4, concentration of reductant 15g/l and feeding rate of silver ions solution 2 ml/min.

귀금속 농축을 위한 PCB 기반 양극동의 전해정련 특성 (Electro-refining Characteristics of PCB-based Copper Anode for the Enrichment of Precious Metals)

  • 안낙균;심현우;박경수;박정진
    • 자원리싸이클링
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    • 제27권5호
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    • pp.14-22
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    • 2018
  • 본 연구에서는 구리와 귀금속이 함유된 PCB 스크랩을 양극동으로 사용하여 $H_2SO_4$농도, 전류밀도 변화에 대하여 전해정련 실험을 수행하였다. 전해정련 실험을 통해 각 전극에서 회수된 Cu와 slime에 대하여 농도 분석을 하고 원소들의 거동을 확인하였으며, 전류효율도 계산하였다. $H_2SO_4$ 농도가 증가할수록 전류효율과 Cu의 순도는 감소하였지만 양극 슬라임 내에 귀금속은 2.0 M $H_2SO_4$ 조건에서 최대로 농축되었다. 또한 전류밀도가 증가할수록 전류효율은 감소하였고 Cu의 순도는 증가하는 경향을 나타내었으며 양극 슬라임 내에 귀금속은 $300A/m^2$ 조건에서 최대로 농축되었다. Pilot scale 실험 결과, 양극 슬라임에 Au 함량은 8,705 mg/kg, Ag 함량은 35,092 mg/kg으로 나타났고, 초기의 함량과 비교했을 때 Au는 약 16배, Ag는 약 14배 농축이 가능하였다.

SO2가스 피해(被害)에 의(依)한 조원수목(造園樹木)의 ethylene 발생(發生) 및 Ag ion에 의(依)한 ethylene 발생억제(發生抑制) (Production of Ethylene in Ornamental Tress Exposed to SO2 and Inhibition of Ethylene Production by Silver Ion)

  • 구자형;서영교
    • 농업과학연구
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    • 제7권1호
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    • pp.38-43
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    • 1980
  • 곰솔, 개잎갈나무, 주목 등의 조원수목(造園樹木)에 있어서 $SO_2$가스 피해(被害)에 의한 ethylene 발생(發生) 및 에 의한 ethylene 발생억제효과(發生抑制效果)를 조사(調査)하고 아울러 $SO_2$ 가스 처리종료후(處理終了後) 엽(葉)의 유황함량(硫黃含量)을 분석(分析)하였던 바 다음과 같은 결과(結果)를 얻었다. 1. 곰솔과 개잎갈나무에서는 $SO_2$ 처리(處理) 2일후(日後)에 가장 많은 ethylene 발생량(發生量)을 보였으나 주목은 처리(處理) 4일후(日後)까지도 계속 증가(增加)하였다. ethylene 발생량(發生量)은 곰솔에 비(比)하여 개잎갈나무와 주목에서 현저(顯著)히 많았으며 곰솔과 개잎갈나무에서는 가시적(可視的) 피해반점(被害斑點)이 나타나기 전(前)에 많은 양(量)이 발생(發生)하였으나, 주목에서는 피해반점(被害斑點)이 나타난 후(後)에 다량(多量)이 발생(發生)되었다. 2. Ag ion은 $SO_2$ 가스 처리전(處理前)의 잎이나 처리후(處理後) 피해엽(被害葉)에 살포(撒布)한 경우 모두 ethylene 발생(發生)을 현저(顯著)히 억제(抑制)시켰으며 100ppm의 $A_gNO_3$ 용액(溶液)을 살포(撒布)했을때 가장 효과(效果)가 컸다. 3. 잎의 유황함량(硫黃含量)은 무처리구(無處理區)에 있어서는 수종간(樹種間) 차이(差異)가 크지 않았으나 $SO_2$ 가스 처리후(處理後)에는 주목에 비(比)하여 곰솔과 개잎갈나무에서 다소(多少) 높은 함유량(含有量)을 보였다.

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열처리 온도에 따른 TiO2/Ag/TiO2 박막의 근적외선 반사 특성 변화 (Effect of Annealing Temperature on the Low Emissivity of TiO2/Ag/TiO2 Films)

  • 김소영;문현주;김대일
    • 열처리공학회지
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    • 제28권3호
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    • pp.134-138
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    • 2015
  • Ag intermediated $TiO_2$ films were deposited by RF and DC magnetron sputtering and then vacuum annealed at 100, 200 and $300^{\circ}C$ for 30 minutes to investigate the effect of annealing temperature on the structural and optical properties of the films. For all depositions, the thickness of the $TiO_2$ and Ag films were kept constant at 24 and 15 nm by controlling the deposition time. As-deposited $TiO_2/Ag/TiO_2$ trilayer films have a weak crystalline and an optical reflectance in a near infrared wavelength region of 77.8%, while the films annealed at $300^{\circ}C$ show the polycrystalline structure and an increased mean optical reflectance of 80.4%. From the experimental results, it can be concluded that increasing the annealing temperature enhanced the structural and optical properties of the $TiO_2/Ag/TiO_2$ films.

Hot Wall Epitaxy(HWE) 법에 의해 성장된 $AgGaSe_2$ 단결정 박막의 광전류 온도 의존성 (Temperature dependence of photocurrent spectra for $AgGaSe_2$ single crystal thin film grown by hot wall epitaxy)

  • 홍광준;방진주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.179-180
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    • 2007
  • Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_2$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}\;10^{16}/cm^3$, $139\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501\;eV\;-\;(8.79{\times}10^{-4}\;eV/K)T^2$/(T + 250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_2$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the phcitocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the $\Gamma_5$ states of the valence band of the $AgGaSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_1$-exciton peaks for n = 1.

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Bonding Temperature Effects of Robust Ag Sinter Joints in Air without Pressure within 10 Minutes for Use in Power Module Packaging

  • Kim, Dongjin;Kim, Seoah;Kim, Min-Su
    • 마이크로전자및패키징학회지
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    • 제29권4호
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    • pp.41-47
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    • 2022
  • Ag sintering technologies have received great attention as it was applied to the inverter of Tesla's electric vehicle Model III. Ag sinter bonding technology has advantages in heat dissipation design as well as high-temperature stability due to the intrinsic properties of the material, so it is useful for practical use of SiC and GaN devices. This study was carried out to understand the sinter joining temperature effect on the robust Ag sintered joints in air without pressure within 10 min. Electroplated Ag finished Cu dies (3 mm × 3 mm × 2 mm) and substrates (10 mm × 10 mm × 2 mm) were introduced, respectively, and nano Ag paste was applied as a bonding material. The sinter joining process was performed without pressure in air with the bonding temperature as a variable of 175 ℃, 200 ℃, 225 ℃, and 250 ℃. As results, the bonding temperature of 175 ℃ caused 13.21 MPa of die shear strength, and when the bonding temperature was raised to 200 ℃, the bonding strength increased by 157% to 33.99 MPa. When the bonding temperature was increased to 225 ℃, the bonding strength of 46.54 MPa increased by about 37% compared to that of 200 ℃, and even at a bonding temperature of 250 ℃, the bonding strength exceeded 50 MPa. The bonding strength of Ag sinter joints was directly influenced by changes in the necking thickness and interfacial connection ratio. In addition, developments in the morphologies of the joint interface and porous structure have a significant effect on displacement. This study is systematically discussed on the relationship between processing temperatures and bonding strength of Ag sinter joints.

Electronic Structures of ANb2PS10 (A=Ag, Na) and AuNb4P2S20

  • Jung, Dong-Woon;Kim, Sung-Jin
    • Bulletin of the Korean Chemical Society
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    • 제24권6호
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    • pp.739-743
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    • 2003
  • New quaternary compounds $ANb_2PS_{10}$ (A = Na, Ag) and $AuNb_4P_2S_{20}$ were synthesized and characterized. The structures of three compounds consist of one-dimensional infinite chains built by [$Nb_2S_{12}$] and [$PS_4$] units. Cation atoms are occupied within the van der Waals gap of sulfur atoms between infinite chains to make -S…$M^+$…S- contacts. There is only one Au atom site and so crystallographically a unit cell contains four equivalent Au atoms in $AuNb_4P_2S_{20}$. This is only the half of the numbers of Na or Ag atoms in $NaNb_2PS_{10}$ or $AgNb_2PS_{10}$. The ratio between $Nb_2PS_{10}$ matrix vs the cation is, therefore, 1 : 1 for Ag and Na, but it is 2 : 1 for Au. Mixed valency in Au or Nb was expected to balance the charge in the latter compound. The electronic structures calculated based on the extended Huckel tight-binding method show that $ANb_2PS_{10}$ (A = Ag, Na) are semiconducting, while $AuNb_4P_2S_{20}$ is metallic, which is not consistent with the experimental results of these three compounds that all exhibit semiconducting property. The result of calculation suggests that $AuNb_4P_2S_{20}$ might be a magnetic insulator. Magnetic measurement experiment exactly proved that the compound is a Slater antiferromagnetic material with the Neels' temperature of 45 K. It is recognized, therefore, that electronic structure analysis is very useful to understand the properties of compounds.

유리질 탄소전극에서 양극벗김 네모파 전압-전류법에 의한 생체내 미량 수은의 정량 (Determination of Bio-Accumulated Trace Mercury by Anodic Stripping Square Wave Voltammetry at Glassy Carbon Electrode)

  • 김일광;천현자;정승일;백승화;한완수
    • 대한화학회지
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    • 제45권4호
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    • pp.298-303
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    • 2001
  • 생체시료에 함유된 미량수은을 유리질 탄소전극을 사용하는 양극 벗김 네모파 전압-전류법으로 정량하였다. 생체시료는 HNO3/H2SO4 산혼합용액으로 삭히고, KMnO4를 가하여 산화시켰다. 수은의 검출한계는 석출전위, 시 간, pH, 그리고 용액을 저어주는 속도 등에 크게 영향을 받았다. 1.0 volts vs. Ag/AgCl에서 400rpm으로 저어주면서 240 sec 동안 석출시켰을 경우, 검출한계는 0.5 ppb 이하였다. 흰쥐에 대한 수은의 생체 축적량은 신장과 간에서 높았고, 뇌에서는 매우 낮았다.

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Effect of Salt on Facilitated Propylene Transport through Crosslinked PVA/Silver Salt Complex Membranes

  • Kim, Jong-Hak;Min, Byoung-Ryul;Lee, Ki-Bong;Kang, Yong-Soo
    • Korean Membrane Journal
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    • 제8권1호
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    • pp.43-49
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    • 2006
  • Complex membranes consisting of silver salt ($AgBF_4,\;AgCF_3SO_3,\;AgSbF_6,\;AgNO_3$) and poly(vinyl alcohol) (PVA) or crosslinked PVA (CPVA) were prepared and tested for the separation of propylene/propane mixtures. For the tested membranes, the complex membranes containing $AgBF_4$ exhibited the highest separation properties, i.e., approximately 20 GPU ($1 GPU=10^{-6}cm^3 (STP)/(cm^2 sec cmHg)$) and 100 of selectivity at 0.2 of silver mole fraction. The CPVA membranes containing silver salt always showed higher selectivity than PVA membranes, presenting silver ions coordinated to -CHO are more effective than those to -OH groups. The threshold silver concentration of CPVA membranes was lower than that of PVA membranes, which might be due to stronger interaction of silver ions with -CHO than that with -OH. The composition at which the selectivity is the highest did not significantly depend on the crosslinking, but did on the kind of silver salt.

UV 처리에 의한 T-OLED용 산화전극에 적합한 Ag 박막연구: Nano-Mechanics 특성 분석을 중심으로 (The Study of Ag Thin Film of Suitable Anode for T-OLED: Focused on Nanotribology Methode)

  • 이규영;김수인;김주영;권구은;강용욱;손지원;전진웅;김민철;이창우
    • 한국진공학회지
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    • 제21권6호
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    • pp.328-332
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    • 2012
  • Ag (silver)의 일함수는 T-OLED (Top Emission Organic Light Emitting Diode)의 전극소자로 사용하기에는 다소 낮다는 단점이 있다(~4.3 eV). 이러한 단점을 해결하기 위한 대안으로 Ag 박막의 표면을 플라즈마, UV, 열처리를 통하여 일함수를 높이는 연구가 진행되어 왔다(~5.0 eV). 하지만 현재의 대부분 연구는 후 처리된 박막의 일함수에 초점을 맞춰 연구가 진행되어, 박막의 mechanical property에 대한 연구는 매우 부족하며 이는 T-OLED의 효율과 수명 등의 연구에 매우 중요하다. 본 논문에서는 Ag와 $AgO_x$ 박막의 mechanical property에 초점을 맞춰 분석을 실시하였다. Ag는 유리기판 위에 rf-magnetron sputter를 이용하여 100 W의 power에서 150 nm 두께로 증착되었다. 증착된 박막은 UV 램프를 이용하여 다양한 시간동안 UV 처리되었다(0~9분). 본 논문에서는 처리된 박막의 면저항을 측정하고 nano indenter, Scanning Probe Microscopy의 Atomic Force Microscopy mode를 이용하여 mechanical property를 분석하였다. 실험 결과 UV 처리 시간이 3분을 넘어가는 시편과 3분 이내의 시편은 면저항값 및 경도 값에 큰 차이가 있었다. 이러한 결과는 Ag 박막의 후처리에 따른 Ag 물질의 산화 및 결합상태에 따라 박막 내에 존재하는 stress의 영향으로 예상되어진다.