• Journal of the Semiconductor & Display Technology
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• v.23 no.2
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• pp.87-91
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• 2024

SiO₂, renowned for its excellent insulating properties, has been used in the semiconductor industry as a valuable dielectric material. High-quality SiO₂ films find applications in gate spacers and interlayer insulation gap-fill oxides, among other uses. One of the prevalent methods for depositing these SiO₂ films is plasma enhanced chemical vapor deposition (PECVD) favored for its relatively low processing costs and ability to operate at low temperatures. However, compared to the increasingly utilized atomic layer deposition (ALD) method, PECVD exhibits inferior film characteristics such as uniformity. This study aims to produce SiO₂ films with uniformity as close as possible to those achieved by ALD through the adjustment of PECVD process parameters. we conducted a total of nine PECVD processes, varying the process time and gas flow rates, which were identified as the most influential factors on the PECVD process. Furthermore, ellipsometry analysis was employed to examine the uniformity variations of each process. The experimental results enabled us to elucidate the relationship between uniformity and deposition rate, as well as the impact of gas flow rate and deposition time on the process outcomes. Additionally, thickness measurements obtained through ellipsometer facilitate the identification of optimal process parameters for PECVD.

• Nuclear Engineering and Technology
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• v.46 no.1
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• pp.117-124
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• 2014

The effect of various process variables on the powder properties of recycled $U_3O_8$ from MnO-$Al_2O_3$ doped large grain $UO_2$ pellets and the effect of those recycled $U_3O_8$ powders on the sintered density and grain size of MnO-$Al_2O_3$ doped large grain $UO_2$ pellets have been investigated. The evolution of morphology, size, and BET surface area of the recycled $U_3O_8$ powders according to the respective variation of the thermo-mechanical treatment variables of oxidation temperature, powder milling, and sequential cyclic heat treatment of oxidation and then reduction was examined. The correlation between the BET surface area of recycled $U_3O_8$ powder and the sintered pellet properties of MnO-$Al_2O_3$ doped pellets showed that the pellet density and grain size of doped pellets were increased and then saturated by increasing the BET surface area of the recycled $U_3O_8$ powder. The density and grain size of the pellets were maximized when the BET surface area of the recycled $U_3O_8$ powder was in the vicinity of $3m^2/g$. Among the process variables applied in this study, the cyclic heat treatment followed by low temperature oxidation was a potential process combination to obtain the sinter-active $U_3O_8$ powder.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.15 no.1
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• pp.83-90
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• 2017

The pyroprocessing of spent nuclear fuel generates LiCl-KCl eutectic waste salt containing radioactive rare earth nuclides. It is necessary to develop a simple process for the treatment of LiCl-KCl eutectic waste in a hot-cell facility. In this study, capture and solidification of a rare earth nuclide (Nd) in LiCl-KCl eutectic salt using an inorganic composite with a $Li_2O-Al_2O_3-SiO_2-B_2O_3$ system was conducted to simplify the existing separation and solidification process of rare earth nuclides in LiCl-KCl eutectic waste salt from the pyroprocessing of spent nuclear fuel. More than 98wt% of Nd in LiCl-KCl eutectic salt was captured when the mass ratio of the composite was 0.67 over $NdCl_3$ in the eutectic salt. The content of $Nd_2O_3$ in the Nd captured-composite reached about 50wt%, and this composite was directly fabricated into a homogeneous and chemical resistant glass waste in a monolithic form. These results will be utilized in designing a process to simplify the existing separation and solidification process.

• Journal of Korean Society on Water Environment
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• v.26 no.1
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• pp.160-167
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• 2010

In this research, the performance evaluation between an alternating type process and a recirculating type process was investigated by using mathematical models. The Advanced Phase Isolation Ditch (APID) process and the $A^2/O$ process were selected the target processes of the alternating type and recirculating type, respectively. For more quantitative evaluation, 5 performance indexes which included economy and energy efficiency as well as effluent quality were used, and various disturbance conditions of influent were given to the process models. As simulation results, the APID process which had the specific operation modes to use the organic matter in influent effectively showed higher efficiency of denitrification than the $A^2/O$ process. In the case of effluent TSS, the $A^2/O$ process that the retention time in reactors could be maintained stably was more effective than the APID process. In the cases of various disturbance condition, although it was identified that both two processes had similar effluent quality, the sludge production of the $A^2/O$ process showed lower than that of the APID process while the APID process showed higher energy efficiency.

• KSBB Journal
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• v.23 no.6
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• pp.541-545
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• 2008

This paper was studied to research regarding the removal of contained nitrogen in industrial wastewater which uses the A2O4 advanced water treatment process. The field researches of two companies' wastewater occurred in each wastewater treatment site to apply the A2O4 process system, it was observed them for 20 days. As a result of the A2O4 system advanced wastewater process which applied an altitude control process obtained $10{\sim}76\;mg/L$, and 20 mg/L total nitrogen compound concentration in the two wastewater plants. In conclusion, it applied the A2O4 system in the two companies' wastewater system.

• Particle and aerosol research
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• v.16 no.4
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• pp.95-105
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• 2020

Vanadium Pentoxide (V2O5) has been emerged as alternative electrode materials for supercapacitors due to their low cost, natural abundance, and environmental friendliness. Graphene (GR) loaded with V2O5 can exhibit enhanced specific capacitance. In this study, we present three-dimensional (3D) crumpled graphene (CGR) decorated with V2O5. The V2O5-graphene composites were synthesized from a colloidal mixture of graphene oxide (GO) and Ammonium metavanadate (NH4VO3), via aerosol spray drying and post heat treatment process. The average size of composite was ranged from 1.82 to 4.6 ㎛. Morphology of the composite changed from a crumpled paper ball to spherical ball having relatively smooth surface as the content of V2O5 increased in the composites. The electrochemical performance of the V2O5-graphene composites was examined. The V2O5-graphene composite electrode showed the specific capacitance of 312 F/g. In addition, the device possessed acceptable cyclic stability, with 84% after 2000 cycles at 2 A/g. These outstanding properties are expected to make the composites prepared in this study as promising electrode materials for supercapacitor applications.

• Journal of the Korean Ceramic Society
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• v.40 no.12
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• pp.1189-1196
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• 2003

Ferroelectric B $i_{3.25}$L $a_{0.75}$ $Ti_3$ $O_{12}$ (BLT) solution was synthesized by sol-gel process. BLT thin films were deposited on Pt/Ti $O_2$/ $SiO_2$/Si substrates by spin-coating. In this experiments, Bi(TMHD)$_3$, La(III)2-Methoxyethoxide, and Ti(IV) i-propoxide were used as starting materials, which were dissolved in 2-Methoxyethanol. Rapid Thermal Annealing (RTA) was used to promote crystallization of BLT thin films. The thin films with RTA process were compared with those with non-RTA process on electrical properties. After RTA process, the remanent polarization value (2Pr) of BLT thin films annealed at 72$0^{\circ}C$ was 20.46 $\mu$C/$\textrm{cm}^2$ which was approximately 27% higher than that of non-RTA process at 5 V.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.49-50
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• 2006

[ $Ti(Al,\;O)-Al_2O_3$ ] composite powders were produced by high energy mechanical milling of a mixture of Al and $TiO_2$ powders followed by a combustion reaction. The powders were subsequently thermally sprayed on H13 steel substrates. Microstructural examination was conducted on the composite powders and thermally sprayed coatings, using X-ray diffractometry (XRD) and scanning electron microscopy (SEM). The performance of the coatings was evaluated in terms of micro-hardness and thermal fatigue. The thermally sprayed coatings performed very well in the preliminary thermal fatigue tests and showed no wetting tendency to molten aluminum.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.402-409
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• 2013

The objective of this study was to develop a synthesis process for ${\beta}$-SiC powders to reduce the synthesis temperature and to control the particle size and to prevent particle agglomeration of the synthesized ${\beta}$-SiC powders. A phenol resin and TEOS were used as the starting materials for the carbon and Si sources, respectively. $SiO_2$-C hybrid precursors with various C/Si mole ratios were fabricated using a conventional sol-gel process. ${\beta}$-SiC powders were synthesized by a carbothermal reduction process using $SiO_2$-C hybrid precursors with various C/Si mole ratios (1.6 ~ 2.5) fabricated using a sol-gel process. In this study, the effects of excess carbon and the addition of Si powders to the $SiO_2$-C hybrid precursor on the synthesis temperature and particle size of ${\beta}$-SiC were examined. It was found that the addition of metallic Si powders to the $SiO_2$/C hybrid precursor with excess carbon reduced the synthesis temperature of the ${\beta}$-SiC powders to as low as $1300^{\circ}C$. The synthesis temperature for ${\beta}$-SiC appeared to be reduced with an increase of the C/Si mole ratio in the $SiO_2$-C hybrid precursor by a direct carburization reaction between Si and excess carbon.

• ETRI Journal
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• v.26 no.4
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• pp.315-320
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• 2004

This paper proposes a 10-${\mu}m$ thick oxide layer structure that can be used as a substrate for RF circuits. The structure has been fabricated using an anodic reaction and complex oxidation, which is a combined process of low-temperature thermal oxidation (500 $^{\circ}C$ for 1 hr at $H_2O/O_2$) and a rapid thermal oxidation (RTO) process (1050 ${\circ}C$, for 1 min). The electrical characteristics of the oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current density through the OPSL of 10 ${\mu}m$ was about 10 to 50 $nA/cm^2$ in the range of 0 to 50 V. The average value of the breakdown field was about 3.9 MV/cm. From the X-ray photo-electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL prepared by a complex process were confirmed to be completely oxidized. The role of the RTO process was also important for the densification of the porous silicon layer (PSL) oxidized at a lower temperature. The measured working frequency of the coplanar waveguide (CPW) type short stub on an OPSL prepared by the complex oxidation process was 27.5 GHz, and the return loss was 4.2 dB, similar to that of the CPW-type short stub on an OPSL prepared at a temperature of 1050 $^{\circ}C$ (1 hr at $H_2O/O_2$). Also, the measured working frequency of the CPW-type open stub on an OPSL prepared by the complex oxidation process was 30.5 GHz, and the return was 15 dB at midband, similar to that of the CPW-type open stub on an OPSL prepared at a temperature of $1050^{\circ}C$ (1 hr at $H_2O/O_2$).