• Journal of the Korea Organic Resources Recycling Association
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• v.32 no.1
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• pp.39-47
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• 2024

In this study, LiDAR-detective black material is synthesized by recycling silicon sludge (SS) that is generated from semiconductor manufacturing process, and its recognition is confirmed using two types of LiDAR sensors (MEMS and Rotating LiDAR). In detail, metal impurities on the surface of SS is removed, followed by coating of titanium dioxide (TiO₂) and subsequent chemical reduction to obtain SS-derived black TiO₂ (SS/bTiO₂) material. As-prepared SS/bTiO₂ is mixed with transparent paint to prepare hydrophilic black paints and applied to a glass substrate using a spray gun. SS/bTiO₂-based paint shows similar blackness (L^*=15.7) compared to commercial carbon black-based paint, and remarkable NIR reflectance (26.5R%, 905nm). Furthermore, MEMS and Rotating LiDAR have successfully detected the SS/bTiO₂-based paint. This is attributed to the occurrence of high reflection of light at the interface between the black TiO₂ and the silicon sludge according to the Fresnel's reflection principle. Hence, the new application field to effectively recycle silicon sludge generated in the semiconductor manufacturing process has been presented.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.10
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• pp.9-12
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• 2016

The process parameters of DC pulsed sputtering to produce a multi-layer thin film with light reflectance at a specific wavelength region were studied. The optical simulation of multi-layer thin films of the silicon dioxide ($SiO_2$) films with a low refractive index and the titanium dioxide ($TiO_2$) films with a high refractive index was done. Under a DC pulsed sputtering power of 2kW and 200 sccm(standard cubic centimeter per minute) argon gas, the silicon dioxide films with a refractive index of 1.46 in the range of oxygen gas ratios of 12% and a titanium dioxide film with a refractive index of 2.27 in the range of oxygen gas ratios of 1% were produced. The multi-layer structure of high refractive index/low refractive index/high refractive index was designed and fabricated. The characteristics of the fabricated multi-layer thin film structure showed a reflectance of more than 45% in the range, 780 to 1200nm. This multi-layer structure is expected to be used to block the near infrared wavelength light.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.245-250
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• 2019

We investigated the post-annealing effect of Sn-incorporated β-Ga₂O₃ (β-Ga₂O₃ : Sn) nanowires (NWs) grown on sapphire (0001) substrates using radio-frequency powder sputtering. The β-Ga₂O₃ : Sn NWs were converted to a porous structure during the vacuum annealing process at 800℃. Host non-stoichiometric Ga₂O_3-x, is transformed into stoichiometric Ga₂O₃, where Sn atoms separate and form Sn nano-clusters that gradually evaporate in a vacuum atmosphere. As a result, the amount of Sn atoms was reduced from 1.31 to 0.27 at%. Pores formed on the sides of β-Ga₂O₃ : Sn NWs were observed. This increases the ratio of the surface to the volume of β-Ga₂O₃ : Sn NWs.

• Resources Recycling
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• v.25 no.6
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• pp.92-97
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• 2016

Spray dried $Cr_2O_3$ powder having an agglomerated structure of particles was twice treated into a plasma flame to increase its apparent density. The powder subjected to the first densification treatment did not show the entirely melted state keeping inner particle hollows, and it was fully melted after the second processing only. The powder size as a result of the second treatment decreased, and the apparent density as well as flowability were increased due to melting and surface smoothing effects. But a part of particles after the second densified treatment showed the hollow structure, especially those which were above $30{\mu}m$ in size. This densification behavior of the powder has been qualitatively discussed in terms of the thermal conductivity and inner gas pressure within aggregates exposed to the plasma flame.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.2
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• pp.315-322
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• 2002

A thin film oxide semiconductor micro gas sensor array which shows only 60㎽ of power consumption at an operating temperature of 30$0^{\circ}C$ has been fabricated using microfabrication and rnicrornachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double la! or structure of 0.1${\mu}{\textrm}{m}$ thick Si$_3$N$_4$ and 1${\mu}{\textrm}{m}$ thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric－pressure chemical-vapor deposition(APCVD), respectively. The sensor way consists of such thin film oxide semiconductor sensing materials as 1wt.％ Pd-doped SnO$_2$, 6wt.% AI$_2$O$_3$-doped ZnO, WO$_3$ and ZnO. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials. Heater Part of the sensor structure has been modified in order to improve the process yield of the sensor, and as a result of modified heater structure improved process yield has been achieved.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.1
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• pp.41-45
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• 2014

We have investigated the passivation property of $SiN_x$ and $SiO_2$ thin films formed using various process conditions for the application of crystalline Si solar cells. An increase in the thickness of $SiN_x$ deposited using plasma enhanced chemical vapor deposition (PECVD) led to the improvement of passivation quality. This could be associated with the passivation of Si dangling bonds by hydrogen atoms which were supplied during PECVD deposition. The $SiO_2$ thin films grown using dry oxidation process exhibited better passivation behavior than those using wet oxidation process, implying the dry oxidation process was more effective in the formation of high quality $SiO_2$ thin films. The relative effective life time gradually decreased with increasing dry oxidation temperature. Such a degradation of passivation behavior could be attributed to the increase in interface trap density caused by thermal damages.

• Resources Recycling
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• v.16 no.6
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• pp.10-19
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• 2007

The mechanical process followed by hydrometallurgical treatment has been developed in order to recover cobalt and lithium from spent lithium ion battery. In the previous study, a citrate precursor combustion process to prepare cathodic active materials from the leaching solution was elucidated. Resynthesis of electrode materials should be more valuable in spent battery recycling. Conventional slurry mixing of $LiCoO_2$ and carbon cannot make uniform distribution, and therefore the cathode cannot reach the theoretical charge-discharge capacity and is easily degraded during the charge-discharge cycling. In this study, ultra-fine $LiCoO_2$ powders has been prepared by modification of the combustion process and fabricated the enhanced cathode by modification of mixing method of $LiCoO_2$ and carbon added.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.1 no.1
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• pp.25-39
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• 2003

This study proposed a new electrolytic reduction technology that is based on the integration of simultaneous uranium oxide metallization and Li$_2$O electrowinning. In this electrolytic reduction reaction, electrolytically reduced Li deposits on cathode and simultaneously reacts with uranium oxides to produce uranium metal showing more than 99% conversion. For the verification of process feasibility, the experiments to obtain basic data on the metallization of uranium oxide, investigation of reaction mechanism, the characteristics of closed recycle of Li$_2$O and mass transfer were carried out. This evolutionary electrolytic reduction technology would give benefits over the conventional Li-reduction process improving economic viability such as: avoidance of handling of chemically active Li-LiCl molten salt increase of metallization yield, and simplification of process.

• Resources Recycling
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• v.27 no.2
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• pp.32-37
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• 2018

This study was conducted as a preliminary study for the recycling of palladium and palladium oxide. In this study, thermodynamic equations for the formation of palladium oxide (PdO) are established. Palladium chloride is dissolved into hydrochloric acid to generate a palladium chloride solution. Nanosized palladium oxide powder with an average particle size below 30 nm were generated from this raw material solution by means of a spray pyrolysis process. The palladium oxide particles were composed of a single solid crystal. The results of XRD analysis showed that only a PdO phase of the generated powder was formed. And, the specific surface area of the generated palladium powder was approximately $32m^2/g$.

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.538-543
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• 2008

Recently a nano-scale diamond is possible to manufacture forms of powder(below 100 nm) by new processing of explosion or deposition method. Using a sintering of nano-scale diamond is possible to manufacture of grinding tools. We have need of a processing development of coated uniformly inorganic to prevent an abnormal grain growth of nano-crystal and bonding obstacle caused by sintering process. This paper, in order to improve the sintering property of nano-scale diamond, we coated ZnO thin films(thickness: $20{\sim}30\;nm$) in a vacuum by ALD(atomic layer deposition) Economically, in order to deposit ZnO all over the surface of nano-scale diamond powder, we used a new modified fluidized bed processing replaced mechanical vibration effect or fluidized bed reactor which utilized diamond floating owing to pressure of pulse(or purge) processing after inserted diamond powders in quartz tube(L: 20 mm) then closed quartz tube by porosity glass filter. We deposited ZnO thin films by ALD in closed both sides of quartz tube by porosity glass filter by ALD(precursor: DEZn($C_4H_{10}Zn$), reaction gas: $H_2O$) at $10^{\circ}C$(in canister). Processing procedure and injection time of reaction materials set up DEZn pulse-0.1 sec, DEZn purge-20 sec, $H_2O$ pulse-0.1 sec, $H_2O$ purge-40 sec and we put in operation repetitive 100 cycles(1 cycle is 4 steps) We confirmed microstructure of diamond powder and diamond powder doped ZnO thin film by TEM(transmission electron microscope) Through TEM analysis, we confirmed that diamond powder diameter was some $70{\sim}120\;nm$ and shape was tetragonal, hexagonal, etc before ALD. We confirmed that diameter of diamond powders doped ZnO thin film was some $70{\sim}120\;nm$ and uniform ZnO(thickness: $20{\sim}30\;nm$) thin film was successfully deposited on diamond powder surface according to brightness difference between diamond powder and ZnO.