• 한국전기전자재료학회논문지
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• 제30권7호
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• pp.427-431
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• 2017

In this paper, we discuss ${\beta}-Ga_2O_3$ thin films that have been grown on freestanding GaN (FS-GaN) using furnace oxidation. A GaN template was grown by horizontalhydride vapor phase epitaxy (HVPE), and FS-GaN was fabricated using the laser lift off (LLO) system. To obtain ${\beta}-Ga_2O_3$ thin film, FS-GaN was oxidized at $900{\sim}1,100^{\circ}C$. Surface and cross-section of prepared ${\beta}-Ga_2O_3$ thin films were observed by field emission scanning electron microscopy (FE-SEM). The single crystal FS-GaNs were changed to poly-crystal ${\beta}-Ga_2O_3$. The oxidized ${\beta}-Ga_2O_3$ thin film at $1,100^{\circ}C$ was peel off from FS-GaN. Next, oxidation of FS-GaNwas investigated for 0.5~12 hours with variation of the oxidation time. The thicknesses of ${\beta}-Ga_2O_3$ thin films were measured from 100 nm to 1,200 nm. Moreover, the 2-theta XRD result indicated that (-201), (-402), and (-603) peaks were confirmed. The intensity of peaks was increased with increased oxidation time. The ${\beta}-Ga_2O_3$ thin film was generated to oxidize FS-GaN.

• 전기화학회지
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• 제12권2호
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• pp.189-195
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• 2009

고순도의 $\beta-Ga_{2}O_{3}$ 나노로드(nanorods)가 니켈산화물 나노입자를 촉매로 사용하고 갈륨금속분말을 원료물질로 이용하여 화학기상증착법으로 합성되었다. 전계방출형 주사전자현미경을 이용하여 $\beta-Ga_{2}O_{3}$ 나노로드를 관찰한 결과, 평균직경은 약 160 nm 그리고 평균길이는 $4{\mu}m$였으며 vaporsolid(VS) 성장기구를 통하여 성장되었음을 알 수 있었다. X-선 회절시험과 고분해능 투과전자 현미경을 이용한 결정구조 분석 결과, 합성된 나노로드의 내부는 단사정계 결정구조를 가지는 단결정의 $\beta-Ga_{2}O_{3}$로 이루어져 있고 외벽은 비정질 갈륨옥사이드로 이루어진 코어-셀 구조로 구성되어 있는 것을 확인하였다. 합성된 $\beta-Ga_{2}O_{3}$ 나노로드를 음극 활물질로 사용하여 전극을 제조하고 전기화학적 특성을 분석한 결과, 리튬/$\beta-Ga_{2}O_{3}$ 나노로드 전지는 첫 방전 시 867 mAh/g-$\beta-Ga_{2}O_{3}$의 높은 용량을 나타내었으나 초기 비가역 용량으로 인해 62%의 낮은 충 방전 효율을 나타내었다. 그러나 5 사이클 이후 높은 충 방전 효율을 보이며 30 사이클까지 안정된 사이클 특성을 나타내었다.

• 한국결정성장학회지
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• 제12권3호
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• pp.149-156
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• 2002

$Ga_2O_3$ : $Eu^{3+}$ 형광체 분말을 균일침전법에 의해 제조하여 TG/DTA, XRD, FT-IR, SEM 등으로 특성을 분석하였다. 결정질 GaOOH 와 비정질에 가까운 $\gamma$-$Ga_2O_3$ 등 두 종류의 분말이 얻어졌다. 요소 농노가 0.5 M 이하에서는 입자는 막대모양을 이루고, 열처리에 따라 $\alpha$-$Ga_2O_3$을 거쳐서 $\beta$-$Ga_2O_3$상으로 변태하였다. 한편 나노미터 크기를 갖는 $\gamma$-$Ga_2O_3$분말은 1.0 M 이상의 요소 농도에서 생성되며, 직접 $\beta$-$Ga_2O_3$으로 전이하였다. 실온에서 광 발광 특성을 비교한 결과 마이크로미터 크기의 분말에 비해 나노미터 크기의 분말이 610 nm에서의 발광 강도가 더 크게 나타났다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.848-850
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• 2001

In this work, we investigated on the white-colored ribbon fiber synthesized from GaN powder. We convinced the formation of monoclinic phase $\beta$-Ga$_2$O$_3$from the X-ray diffraction pattern on ribbon fiber. The 10 K PL spectrum consisted with the strong emission band caused by self-activated optical center at 3.464 eV with the full-width at half maximum of 48 meV and the impurity related emission bands. Through this work, the optical properties and the electrical conductivity of $\beta$-Ga$_2$O$_3$, it will be useful for the fabrication of optoelctronic devices operating in visible spectrum region.

• 한국전기전자재료학회논문지
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• 제14권12호
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• pp.965-971
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• 2001

$\beta$-Ga$_2$O$_3$ nanobelts and nanoparticles were synthesized from mechanically ground GaN powders with thermal annealing in a nitrogen atmosphere and an oxygen atmosphere, respectively. The study of field emission scanning electron microscopy (FESEM) on the microstructures of nanomaterials revealed that the nanobelts synthesized in the nitrogen atmosphere are with the range of 20~1000nm width and 10 ~100nm thickness, and that nanomaterials are nanoparticles with 20~50nm radius obtained by thermal annealing in an oxygen atmosphere. The crystal structure of the $\beta$-Ga$_2$O$_3$ nanobelts and nanoparticles was in this study investigated by X-ray diffractometer (XRD) and high-resolution transmission electron microscope (HRTEM). The formation processes of the nanobelts and nanoparticles will be discussed in this paper.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.158-160
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• 2001

${\beta}-Ga_2O_3$ nanobelts and nanoparticles were synthesized by a thermal annealing of as-milled GaN powders at $930^{\circ}C$ in nitrogen and oxygen atmosphere. respectively. The width of the nanobelts are $20\;nm{\sim}1000\;nm$. the thickness of the nanobelts are 100 nm. A bundle of the nanobelts is several centimeters in length. The lattice structure of these nanobelts and nanoparticles was identified to be a monoclinic ${\beta}-Ga_2O_3$ by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and selected area electron diffraction (SAED).

• 한국재료학회지
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• 제24권4호
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• pp.214-220
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• 2014

In this research, a precipitation method was used to synthesize ${\beta}-Ga_2O_3$ powders with various particle morphologies and sizes under varying precipitation conditions, such as gallium nitrate concentration, pH, and aging temperature, using ammonium hydroxide and ammonium carbonate as precipitants. The obtained powders were characterized in detail by XRD, SEM, FT-IR, and TG-DSC. From the TG-DSC result, GaOOH phase was transformed to ${\beta}-Ga_2O_3$ at around $742^{\circ}C$, and weight loss percent was about 14 % when $NH_4OH$ was used as a precipitant. Also, ${\beta}-Ga_2O_3$ formed at $749^{\circ}C$ and weight loss percent was about 15 % when $(NH)_2CO_3$ was used as a precipitant. XRD results showed that the obtained $Ga_2O_3$ had pure monoclinic phase in both cases. When $(NH)_2CO_3$ was used as a precipitant, the particle shape changed and became irregular. The range of particle size was about $500nm-4{\mu}m$ based on various concentrations of gallium nitrate solution with $NH_4OH$. The particle size was increased from $1-2{\mu}m$ to $3-4{\mu}m$ and particle shape was changed from spherical to bar type by increasing aging temperature over $80^{\circ}C$.

• 한국재료학회지
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• 제23권2호
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• pp.104-111
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• 2013

In this study, GaN powders were synthesized from gallium oxide-hydroxide (GaOOH) through an ammonification process in an $NH_3$ flow with the variation of $B_2O_3$ additives within a temperature range of $300-1050^{\circ}C$. The additive effect of $B_2O_3$ on the hexagonal phase GaN powder synthesis route was examined by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Fourier transformation infrared transmission (FTIR) spectroscopy. With increasing the mol% of $B_2O_3$ additive in the GaOOH precursor powder, the transition temperature and the activation energy for GaN powder formation increased while the GaN synthesis limit-time ($t_c$) shortened. The XPS results showed that Boron compounds of $B_2O_3$ and BN coexisted in the synthesized GaN powders. From the FTIR spectra, we were able to confirm that the GaN powder consisted of an amorphous or cubic phase $B_2O_3$ due to bond formation between B and O and the amorphous phase BN due to B-N bonds. The GaN powder synthesized from GaOOH and $B_2O_3$ mixed powder by an ammonification route through ${\beta}-Ga_2O_3$ intermediate state. During the ammonification process, boron compounds of $B_2O_3$ and BN coated ${\beta}-Ga_2O_3$ and GaN particles limited further nitridation processes.

• 한국결정성장학회지
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• 제27권1호
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• pp.1-8
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• 2017

Metal organic chemical vapor deposition(MOCVD) 방법을 이용하여 금속 촉매에 따른 ${\beta}-Ga_2O_3$ 나노 와이어의 제작과 특성에 대해 연구하였다. 본 연구의 성장 조건에서 ${\beta}-Ga_2O_3$ 나노 와이어의 성장이 가능한 금속 촉매는 Au, Cu 그리고 Ni이 있었으며 각 금속 촉매로 성장한 나노 와이어는 성장률과 형상에 많은 차이가 있었다. Ni 촉매 성장의 경우에는 Vapor-Solid(VS) 과정이 ${\beta}-Ga_2O_3$ 나노 와이어 성장의 주된 메커니즘이고 Au, Cu 촉매 성장의 경우에는 Vapor-Liquid-Solid(VLS) 과정이 주된 성장 메커니즘 임을 확인할 수 있었다. 또한, 촉매의 종류에 따라서 ${\beta}-Ga_2O_3$ 나노 와이어의 광학적 특성도 다르게 나타나는 것을 확인할 수 있었다. 반면, 동일한 성장 조건에서 Ti, Ag 그리고 Sn 금속은 나노 와이어 성장을 위한 촉매로 작용하지 못하였다. 본 연구에서는 금속 촉매에 따른 나노 와이어의 성장 가능 여부와 성장한 나노 와이어의 특성 변화가 금속 촉매의 녹는 점, 금속- Ga의 공융 점과 관련이 있음을 상태도와 연관 지어 밝혀내었다.

• 한국전기전자재료학회논문지
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• 제36권6호
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• pp.576-581
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• 2023

The Ga₂O₃ thin films were deposited using an RF sputtering system and the effect of crystallographic and optical properties under rapid thermal annealing conditions on Ga₂O₃ thin film was evaluated. A rapid thermal annealing method can fabricate a crystalline Ga₂O₃ thin film which is applied to various fields with a low cost and a high efficiency compared with the conventional post-annealing method. In this study, the Ga₂O₃ treated at 900℃ for 1 min showed the beta and gamma phases in XRD measurement. In optical properties, the crystalline Ga₂O₃ represented a high transmittance of more than 80% in the visible region and was calculated with a high optical bandgap energy of 4.58 eV. The beta and gamma phases Ga₂O₃ can be obtained by adjusting the rapid thermal annealing temperatures, and the various properties such as the optical bandgap energy can be controlled. Moreover, it is expected that crystalline Ga₂O₃ can be applied to various devices by controlling not only temperature but process time.