Browse > Article
http://dx.doi.org/10.4313/JKEM.2017.30.7.427

Properties of Beta-Ga2O3 Film from the Furnace Oxidation of Freestanding GaN  

Son, Hoki (Korea Institute of Ceramic Engineering & Technology)
Lee, YoungJin (Korea Institute of Ceramic Engineering & Technology)
Lee, Mijai (Korea Institute of Ceramic Engineering & Technology)
Kim, Jin-Ho (Korea Institute of Ceramic Engineering & Technology)
Jeon, Dae-Woo (Korea Institute of Ceramic Engineering & Technology)
Hwang, Jonghee (Korea Institute of Ceramic Engineering & Technology)
Lee, Hae-Yong (LumiGNtech Co.)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.30, no.7, 2017 , pp. 427-431 More about this Journal
Abstract
In this paper, we discuss ${\beta}-Ga_2O_3$ thin films that have been grown on freestanding GaN (FS-GaN) using furnace oxidation. A GaN template was grown by horizontalhydride vapor phase epitaxy (HVPE), and FS-GaN was fabricated using the laser lift off (LLO) system. To obtain ${\beta}-Ga_2O_3$ thin film, FS-GaN was oxidized at $900{\sim}1,100^{\circ}C$. Surface and cross-section of prepared ${\beta}-Ga_2O_3$ thin films were observed by field emission scanning electron microscopy (FE-SEM). The single crystal FS-GaNs were changed to poly-crystal ${\beta}-Ga_2O_3$. The oxidized ${\beta}-Ga_2O_3$ thin film at $1,100^{\circ}C$ was peel off from FS-GaN. Next, oxidation of FS-GaNwas investigated for 0.5~12 hours with variation of the oxidation time. The thicknesses of ${\beta}-Ga_2O_3$ thin films were measured from 100 nm to 1,200 nm. Moreover, the 2-theta XRD result indicated that (-201), (-402), and (-603) peaks were confirmed. The intensity of peaks was increased with increased oxidation time. The ${\beta}-Ga_2O_3$ thin film was generated to oxidize FS-GaN.
Keywords
FS-GaN; $Ga_2O_3$; Oxidation; Refractive index;
Citations & Related Records
연도 인용수 순위
  • Reference
1 K. Kachel, M. Korytov, D. Gogova, Z. Galazka, M. Albrecht, R. Zwierz, D. Siche, S. Golka, A. Kwasniewsi, M. Schmidssauer, and R. Fornari, Cryst. Eng. Comm., 14, 8536 (2012). [DOI: http://dx.doi.org/10.1039/C2CE25976A]   DOI
2 D. Y. Guo, X. L. Zhao, Y. S. Zhi, W. Cui, Y. Q. Huang, Y. H. An, P. G. Li, Z. P. Wu, and W. H. Tang, Mater. Lett., 164, 364 (2016). [DOI: http://dx.doi.org/10.1016/J.MATLET.2015.11.001]   DOI
3 L. X. Qian, Y. Wang, Z. H. Wu, T. Sheng, and X. Z. Liu, Vacuum, 39, 1 (2016). [DOI: http://dx.doi.org/10.1016/j.vacuum.2016.07.039]
4 C. T. Lee, H. W. Chen, and H. Y. Lee, Appl. Phys. Lett., 82, 4304 (2003). [DOI: http://dx.doi.org/10.1063/1.1584520]   DOI
5 R. Suzuki, S. Nakagomi, and Y. Kokussun, Appl. Phys. Lett., 98, 131114 (2011). [DOI: http://dx.doi.org/10.1063/1.3574911]   DOI
6 D. Guo, Z. Wu, P. Li, Y. An, H. Liu, X. Guo, H. Yan, G. Wang, C. Sun, L. Li, and W. Tang, Opt. Mater. Express., 4, 1067 (2014). [DOI: http://dx.doi.org/10.1364/OME.4.001067]   DOI
7 K. H. Choi and H. C. Kang, Mater. Lett., 123, 160 (2014). [DOI: https://doi.org/10.1016/j.matlet.2014.03.038]   DOI
8 Y. Chen, H. Liang, X. Xia, R. Shen, Y. Liu, Y. Luo, and G. Du, Appl. Surf. Sci., 325, 258 (2015). [DOI: https://doi.org/10.1016/j.apsusc.2014.11.074]   DOI
9 W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang, and H. T. Hsueh, IEEE Sens. J., 11, 999 (2011). [DOI: http://dx.doi.org/10.1109/JSEN.2010.2062176]   DOI
10 M. Steffens, R. Vianden, and A. F. Pasquevich. Hyperfine Interact., 237, 117 (2016). [DOI: http://dx.doi.org/10.1007/S10751-016-1326-1]   DOI
11 C. T. Lee, H. W. Chen, F. T. Hwang, and H. Y. Lee, J. Electron. Mater., 34, 282 (2005). [DOI: http://dx.doi.org/10.1007/S11664-005-0214-2]   DOI
12 H. Kim, S. J. Park, and H. Hwang, J. Vac. Sci. Technol. B, 19, 579 (2001). [DOI: http://dx.doi.org/10.1116/ 1.1349733]   DOI
13 O. Ambacher, M. S. Brandt, R. Dimitrov, T. Metzger, M. Stutzmann, R. A. Fischer, A. Miehr, A. Bergmaier, and G. Dollinger, J. Vac. Sci. Technol. B, 14, 3532 (1996). [DOI: http://dx.doi.org/10.1116/1.588793]   DOI
14 R. Rao, A. M. Rao, B. Xu, J. Dong, S. Sharma, and M. K. Sunkara, J. Appl. Phys., 98, 094312 (2005). [DOI: http://dx.doi.org/10.1063/1.2128044]   DOI
15 J. Q. Ning, S. J. Xu, D. P. Yu, Y. Y. Shan and S. T. Lee, Appl. Phys. Lett., 91, 103117 (2007). [DOI: https://doi.org/10.1063/1.2780081]   DOI