Properties of Beta-Ga2O3 Film from the Furnace Oxidation of Freestanding GaN |
Son, Hoki
(Korea Institute of Ceramic Engineering & Technology)
Lee, YoungJin (Korea Institute of Ceramic Engineering & Technology) Lee, Mijai (Korea Institute of Ceramic Engineering & Technology) Kim, Jin-Ho (Korea Institute of Ceramic Engineering & Technology) Jeon, Dae-Woo (Korea Institute of Ceramic Engineering & Technology) Hwang, Jonghee (Korea Institute of Ceramic Engineering & Technology) Lee, Hae-Yong (LumiGNtech Co.) |
1 | K. Kachel, M. Korytov, D. Gogova, Z. Galazka, M. Albrecht, R. Zwierz, D. Siche, S. Golka, A. Kwasniewsi, M. Schmidssauer, and R. Fornari, Cryst. Eng. Comm., 14, 8536 (2012). [DOI: http://dx.doi.org/10.1039/C2CE25976A] DOI |
2 | D. Y. Guo, X. L. Zhao, Y. S. Zhi, W. Cui, Y. Q. Huang, Y. H. An, P. G. Li, Z. P. Wu, and W. H. Tang, Mater. Lett., 164, 364 (2016). [DOI: http://dx.doi.org/10.1016/J.MATLET.2015.11.001] DOI |
3 | L. X. Qian, Y. Wang, Z. H. Wu, T. Sheng, and X. Z. Liu, Vacuum, 39, 1 (2016). [DOI: http://dx.doi.org/10.1016/j.vacuum.2016.07.039] |
4 | C. T. Lee, H. W. Chen, and H. Y. Lee, Appl. Phys. Lett., 82, 4304 (2003). [DOI: http://dx.doi.org/10.1063/1.1584520] DOI |
5 | R. Suzuki, S. Nakagomi, and Y. Kokussun, Appl. Phys. Lett., 98, 131114 (2011). [DOI: http://dx.doi.org/10.1063/1.3574911] DOI |
6 | D. Guo, Z. Wu, P. Li, Y. An, H. Liu, X. Guo, H. Yan, G. Wang, C. Sun, L. Li, and W. Tang, Opt. Mater. Express., 4, 1067 (2014). [DOI: http://dx.doi.org/10.1364/OME.4.001067] DOI |
7 | K. H. Choi and H. C. Kang, Mater. Lett., 123, 160 (2014). [DOI: https://doi.org/10.1016/j.matlet.2014.03.038] DOI |
8 | Y. Chen, H. Liang, X. Xia, R. Shen, Y. Liu, Y. Luo, and G. Du, Appl. Surf. Sci., 325, 258 (2015). [DOI: https://doi.org/10.1016/j.apsusc.2014.11.074] DOI |
9 | W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang, and H. T. Hsueh, IEEE Sens. J., 11, 999 (2011). [DOI: http://dx.doi.org/10.1109/JSEN.2010.2062176] DOI |
10 | M. Steffens, R. Vianden, and A. F. Pasquevich. Hyperfine Interact., 237, 117 (2016). [DOI: http://dx.doi.org/10.1007/S10751-016-1326-1] DOI |
11 | C. T. Lee, H. W. Chen, F. T. Hwang, and H. Y. Lee, J. Electron. Mater., 34, 282 (2005). [DOI: http://dx.doi.org/10.1007/S11664-005-0214-2] DOI |
12 | H. Kim, S. J. Park, and H. Hwang, J. Vac. Sci. Technol. B, 19, 579 (2001). [DOI: http://dx.doi.org/10.1116/ 1.1349733] DOI |
13 | O. Ambacher, M. S. Brandt, R. Dimitrov, T. Metzger, M. Stutzmann, R. A. Fischer, A. Miehr, A. Bergmaier, and G. Dollinger, J. Vac. Sci. Technol. B, 14, 3532 (1996). [DOI: http://dx.doi.org/10.1116/1.588793] DOI |
14 | R. Rao, A. M. Rao, B. Xu, J. Dong, S. Sharma, and M. K. Sunkara, J. Appl. Phys., 98, 094312 (2005). [DOI: http://dx.doi.org/10.1063/1.2128044] DOI |
15 | J. Q. Ning, S. J. Xu, D. P. Yu, Y. Y. Shan and S. T. Lee, Appl. Phys. Lett., 91, 103117 (2007). [DOI: https://doi.org/10.1063/1.2780081] DOI |