• 제목/요약/키워드: ${ZnNb_2}{O_6}$

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Zn 도핑을 통한 (K,Na)NbO3-Bi(Ni,Ta)O3 세라믹의 미세구조 및 에너지 저장 물성 제어 (Modulation of Microstructure and Energy Storage Performance in (K,Na)NbO3-Bi(Ni,Ta)O3 Ceramics through Zn Doping)

  • 김주은;박선화;민유호
    • 한국분말재료학회지
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    • 제30권6호
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    • pp.509-515
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    • 2023
  • Lead-free perovskite ceramics, which have excellent energy storage capabilities, are attracting attention owing to their high power density and rapid charge-discharge speed. Given that the energy-storage properties of perovskite ceramic capacitors are significantly improved by doping with various elements, modifying their chemical compositions is a fundamental strategy. This study investigated the effect of Zn doping on the microstructure and energy storage performance of potassium sodium niobate (KNN)-based ceramics. Two types of powders and their corresponding ceramics with compositions of (1-x)(K,Na)NbO3-xBi(Ni2/3Ta1/3)O3 (KNN-BNT) and (1-x)(K,Na)NbO3-xBi(Ni1/3Zn1/3Ta1/3)O3 (KNN-BNZT) were prepared via solid-state reactions. The results indicate that Zn doping retards grain growth, resulting in smaller grain sizes in Zn-doped KNN-BNZT than in KNN-BNT ceramics. Moreover, the Zn-doped KNN-BNZT ceramics exhibited superior energy storage density and efficiency across all x values. Notably, 0.9KNN-0.1BNZT ceramics demonstrate an energy storage density and efficiency of 0.24 J/cm3 and 96%, respectively. These ceramics also exhibited excellent temperature and frequency stability. This study provides valuable insights into the design of KNN-based ceramic capacitors with enhanced energy storage capabilities through doping strategies.

Pb계 Perovskite-Pyrochlore 복합체의 강유전특성 (Ferroelectric Characteristics of Pb-containing Perovskite-Pyrochlore Composites)

  • 조진우;손정호;조상희
    • 한국세라믹학회지
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    • 제34권5호
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    • pp.500-504
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    • 1997
  • Perovskite Pb0.7Ba0.3Zn1/3Nb2/3O3 substituted with 0.3 mole fraction for Pb-site in PbZn1/3Nb2/3O3 relaxor and pyrochlore Pb1.83Ba0.29Zn1.71Nb2/3O6.39 were mixed and dielectric characteristics of this composites were investigated. Percolation limit of perovskite phase, which was determined by microstructural observation in the composite as an isolation of perovskite phase from pyrochlore matrix, was 28.9-47.5 vol%. Ferroelectric phase transition below percolation limit depends on a parameter which affects the propagation of lattice vibration between isolated perovskite phase and pyrochlore matrix. Therefore, it is believed that ferroelectric lattice vibration of isolated perovskite phase could be transfered to pyrochlore matrix when the oxygen octahedra are linked in 3-dimension and highly polarizable Pb2+ ions are contained in both phases.

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Effects of Thermal Annealing on Dielectric and Piezoelectric Properties of Pb(Zn, Mg)1/3Nb2/3O3-PbTiO3 System in the Vicinity of Morphotropic Phase Boundary

  • Hyun M. Jang;Lee, Kyu-Mann
    • The Korean Journal of Ceramics
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    • 제1권1호
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    • pp.13-20
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    • 1995
  • Effects of thermal annealing on the dielectric/piezoelectric properties of $Pb(Zn, Mg)_{1/3}Nb_{2/3}O_3-PbTiO_3$ ceramics (PZMNPT) with Zn/Mg=6/4) were examined across the rhombohedral/tetragonal morphotropic phase boundary (MPB). Both the relative dielectric permittivity ($\varepsilon$r)and the piezoelectric constant($d_33$)/electromechanical coupling constant ($k_p$)were increased by thermal annealing ($800^{\circ}$~$900^{\circ}C$) after sintering at $1150^{\circ}C$ for 1 hr. Based on the dielectric analysis using the series mixing model and the concept of a random distribution of the local Curie points, the observed improvements in the dielectric and piezoelectric properties of PZMN-PT were interpreted in terms of the elimination of PbO-rich amorphous intergranular layers(~1nm) induced by thermal annealing. A concrete evidence of the presence of amorphous grain-boundary layers in the unannealed (as-sintered) specimen was obtained by examining the structure of intergranular region using a TEM.

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소결온도에 따른 0.8Ba($Zn_{1/3}Ta_{2/3})O_3$-0.2Ba($Co_{1/3}Nb_{2/3})O_3$ 세라믹스의 구조적 특성 (The Structural Properties of The Structural Properties of 0.8Ba($Zn_{1/3}Ta_{2/3})O_3$-0.2Ba($Co_{1/3}Nb_{2/3})O_3$ Ceramics with Sintering Temperature)

  • 배경인;이문기;임성수;김강;류기원;이영희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2000년도 하계학술대회 논문집 C
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    • pp.1667-1669
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    • 2000
  • The 0.8Ba($Zn_{1/3}Ta_{2/3})O_3$-0.2Ba($Co_{1/3}Nb_{2/3})O_3$ ceramics were prepared by conventional mixed oxide method. The structural properties of the 0.8BZT-0.2BCN ceramics with the sintering temperature were investigated by XRD and SEM. The 0.8BZT-0.2BCN ceramics had a superstructure reflection plane of (100), (200). Increasing the sintering temperature. the ordering parameter of B-site atoms were increased. The lattice constant of 0.8BZT-0.2BCN ceramics was 3.97${\AA}$. Increasing the sintering temperature, the average gram sizes were increased. In the case of the 0.8BZT-0.2BCN ceramics sintered at 1500$^{\circ}C$, the average grain size and bulk density were 1.56${\mu}m$, 6.93$g/cm^3$, respectively.

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Physical Properties of PNN-PMN-PZT Doped with Zinc Oxide and CLBO for Ultrasonic Transducer

  • Yoo, Juhyun;Kim, Tahee;Lee, Eunsup;Choi, Nak-Gu;Jeong, Hoy-Seung
    • Transactions on Electrical and Electronic Materials
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    • 제18권6호
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    • pp.334-337
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    • 2017
  • In this paper, to develop the ceramics with high $d_{33}$ and high $Q_m$ for ultrasonic transducer applications, $0.10Pb(Ni_{1/3}Nb_{2/3})O_3-0.07Pb(Mn_{1/3}Nb_{2/3})O_3-0.83Pb(Zr_{0.5}Ti_{0.5})_{0.83}O_3$ (PNN-PMN-PZT) ceramics were sintered at $940^{\circ}C$ using $CuO-Li_2CO_3-Bi_2O_3$ (CLBO) as a sintering aid by a traditional solid-state technique. The influence of zinc oxide additive on the physical properties of the prepared ceramics were systematically investigated. The R-T (rhombohedral-tetragonal) phase coexistence was found in the ceramics without zinc oxide additive and with increasing amounts of ZnO additive, the specimens showed a tetragonal phase. The formation of a liquid phase between ZnO and $Bi_2O_3$ contributed significantly to the grain growth of specimens. For the 0.1 wt% ZnO ceramics, the optimal physical properties of $d_{33}=370pC/N$, ${\varepsilon}_r=1,344$, $k_p=0.621$, and $Q_m=1,523$ were obtained.

역사시대에 분화한 백두산 화산재의 화학 성분 (Geochemical Composition of Volcanic Ash from Historical Eruptions of Mt. Baekdu, Korea)

  • 윤성효;고정선;장철우
    • 암석학회지
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    • 제27권1호
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    • pp.37-47
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    • 2018
  • 백두산에서 역사시대에 분화한 화산재의 시료에 대하여 다양한 방법으로 주성분과 미량성분을 분석하였다. 화산재의 주성분 원소 함량은 $SiO_2$ 58.8~71.1 wt.%, $Al_2O_3$ 9.6~16.8 wt.%, ${Fe_2O_3}^T$ 4.5~6.9 wt.%, MgO 0.1~1.7 wt.%, CaO 0.3~1.6 wt.%, $Na_2O$ 5.2~6.3 wt.%, $K_2O$ 4.3~5.9 wt.% 그리고 $TiO_2$ 1.2 wt.%이하로 분석되었다. Ba, Cu, Cr. Co, Ni, Sr, V, Zn와 Zr을 포함하는 32개 미량원소가 분석되었는데, 이들 화산재는 일부 미량원소와 경희토류 원소의 부화정도에 따라 두 그룹(그룹 A, 그룹 B)으로 구분되며, 그룹 A에는 1천년 전의 밀레니엄 분화물, 1668년과 1903년 분화물이, 그룹 B에는 1702년 분화물이 해당된다. 중금속원소인 Cu, Co, Zn, Mn 등은 소량 함유되어 나타난다. 백두산 화산재는, 섭입대 기원의 일본 사쿠라지마 화산의 화산재와 비교하여, 미량성분원소 중 Y, Nb, Pb, U, Sc, V, Ni 그리고 Cu 함량은 낮게 나타나며, Zr, Ba, Hf, Cr, Co, Zn 그리고 희토류(Eu제외) 등은 높은 함량을 나타낸다.

첨가율에 의한 Ni-Zn 페라이트의 소결특성에 관한 연구 (A Study on the Sintering Characteristics of Ni-Zn Ferrites with Additives)

  • 강재덕;문현욱;정병두;소대화
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1990년도 추계학술대회 논문집
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    • pp.71-77
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    • 1990
  • This paper is studied on the sintering characteristics of Ni-Zn ferrites. The specimen ferrites was composed of 20 mol% NiO, 30mol% ZnO, 50 mol% Fe$_2$O$_3$, and 0.0025 mol%, 0.005 mol%, 0.01 mol% Nb$_2$O$\_$5/, Bi$_2$O$_3$, V$_2$O$\_$5/, wee used as minor additives. Sintering was carried out at 1100$^{\circ}C$. As results from the experiments, the high value of initial permeability of 6X10$^2$∼9X10$^2$ can be achieved at 500KHz∼1000KHz. The value of loss factor 1X10 ̄$^2$∼2X10$^2$ can be achieved at 500KHz∼1000KHz. The lowest 1/(${\mu}$XQ) value was obtained in the specimen with the addition of 0.005mol% fracyion for V$_2$O$\_$5/.

Doping Effect of Yb2O3 on Varistor Properties of ZnO-V2O5-MnO2-Nb2O5 Ceramic Semiconductors

  • Nahm, Choon-Woo
    • 한국재료학회지
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    • 제29권10호
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    • pp.586-591
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    • 2019
  • This study describes the doping effect of $Yb_2O_3$ on microstructure, electrical and dielectric properties of $ZnO-V_2O_5-MnO_2-Nb_2O_5$ (ZVMN) ceramic semiconductors sintered at a temperature as low as $900^{\circ}C$. As the doping content of $Yb_2O_3$ increases, the ceramic density slightly increases from 5.50 to $5.54g/cm^3$; also, the average ZnO grain size is in the range of $5.3-5.6{\mu}m$. The switching voltage increases from 4,874 to 5,494 V/cm when the doping content of $Yb_2O_3$ is less than 0.1 mol%, whereas further doping decreases this value. The ZVMN ceramic semiconductors doped with 0.1 mol% $Yb_2O_3$ reveal an excellent nonohmic coefficient as high as 70. The donor density of ZnO gain increases in the range of $2.46-7.41{\times}10^{17}cm^{-3}$ with increasing doping content of $Yb_2O_3$ and the potential barrier height and surface state density at the grain boundaries exhibits a maximum value (1.25 eV) at 0.1 mol%. The dielectric constant (at 1 kHz) decreases from 592.7 to 501.4 until the doping content of $Yb_2O_3$ reaches 0.1 mol%, whereas further doping increases it. The value of $tan{\delta}$ increases from 0.209 to 0.268 with the doping content of $Yb_2O_3$.

Sintering Effect on Clamping Characteristics and Pulse Aging Behavior of ESD-Sensitive V2O5/Mn3O4/Nb2O5 Codoped Zinc Oxide Varistors

  • Nahm, Choon-Woo
    • Transactions on Electrical and Electronic Materials
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    • 제16권6호
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    • pp.308-311
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    • 2015
  • V2O5/Mn3O4/Nb2O5 codoped zinc oxide varistor ceramics were sintered at a temperature range as low as 875~950℃. The voltage clamping characteristics of V2O5/Mn3O4/Nb2O5 codoped zinc oxide varistor ceramics were investigated at a pulse current range of 1~50 A. The sintering temperature had a significant effect on clamp voltage ratio, which exhibits surge protection capabilities. The varistor ceramics sintered at 875℃ exhibited the best clamping characteristics, in which the clamp voltage ratio was 2.69 at a pulse current of 50 A. The varistor ceramics sintered at 900℃ exhibited the highest electrical stability, where = 3,824 V/cm (initial 3,909 V/cm), and E1 mA/cm2 = 27 (initial 39) after application of a pulse current of 100 A.