• The Korean Journal of Ceramics
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• v.1 no.4
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• pp.219-223
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• 1995

Ceramic membranes of the supported $TiO_2-CeO_2$ were prepared by dip-coating method on an $\alpha-Al_2O_3$ porous substrate. The mean pore diameter of an alumina support was 0.125 um. The mean particle diameter of $TiO_2-CeO_2$ top layer varied with firing temperature and ranged from 20 to 85 nm. The thermal stability of the composite membranes was studied from their surface microstructure after calcination at $600-900^{\circ}C$. The supported $TiO_2-CeO_2$ composite membranes exhibited much higher heat resistance than the $TiO_2$ membrane.

• Journal of the Korean Chemical Society
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• v.58 no.2
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• pp.205-209
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• 2014

Hematite iron oxide (${\alpha}$-$Fe_2O_3$) nanowalls were fabricated on aluminum substrate by a facile solvent-assisted hydrothermal oxidation process. The XRD and EDS patterns indicate that the sample has a rhombohedral phase of hematite $Fe_2O_3$. FE-SEM, TEM, HR-TEM, SA-ED were employed to characterize the resulting materials. $N_2$ adsorption-desorption isotherms was used to study a BET surface area. Their capability of catalytic degradation of titan yellow GR azo dye with air oxygen in aqueous solution over $Fe_2O_3$ catalysts was studied. The result indicates that the as-prepared product has a high catalytic activity, because it has a larger surface area. Langmuir and Freundlich isotherms of adsorption dye on the catalysts surface were investigated and the decomposition of titan yellow GR follows pseudo-first order kinetic.

• Journal of the Korean institute of surface engineering
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• v.41 no.6
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• pp.308-311
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• 2008

Oxide layers were prepared on Al2021 alloys substrate under a hybrid voltage of AC 200 V (60 Hz) combined with DC 260 V value at room temperature within $5{\sim}60\;min$ by plasma electrolytic oxidation (PEO). An optimized aluminate-fluorosilicate solution was used as the electrolytes. The surface morphology, thickness and composition of layers on Al2021 alloys at different reaction times were studied. The results showed that it is possible to generate oxide layers of good properties on Al2021 alloys in aluminate-fluorosilicate electrolytes. Analysis show that the double-layer structure oxide layers consist of different states such as ${\alpha}-{Al_2}{O_3}$ and ${\gamma}-{Al_2}{O_3}$. For short treatment times, the formation process of oxide layers follows a linear kinetics, while for longer times the formation process slows down and becomes a steady stage. During the PEO processes, the average size of the discharge channels increased gradually as the PEO treatment time increased.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.174-175
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• 2014

We fabricated a Ni/C composite thick film on ${\alpha}-Al_2O_3$ substrate. A number of precipitations were observed on the film surface. Structural characterization was performed on the observed precipitations using transmission electron microscopy (TEM) with help of the elemental mapping, electron diffraction (ED) and ED simulation. The structural characterization revealed that the precipitation is ${\theta}-Al_2O_3$ having the space group of C2/m (Monoclinic).

• Journal of the Korean Ceramic Society
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• v.40 no.8
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• pp.715-719
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• 2003

The Aerosol Deposition (AD) process will be proposed as a new fabrication technology for the integrated RF modules. $\alpha$-A1$_2$O$_3$ thick films were successfully grown on glass and Al substrates at room temperature by the AD process. Relative dielectric permittivity and loss tangent of the $Al_2$O$_3$ thick films on Al showed 9.5 and 0.005, respectively. To form microstrip lines on aerosol-deposited A1903 thick films, copper electroplating and lithography processes were employed, and the square-type cross section with sharp edges could be obtained. Low-pass LC filters with 10 GHz cutoff frequency were simulated by an electromagnetic analysis, exhibiting the validity of the AD process as a fabrication technology f3r integrated RF modules.

• Korean Journal of Metals and Materials
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• v.50 no.8
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• pp.575-582
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• 2012

Medium carbon steel was aluminized by hot dipping into molten Al or Al-1 at% Si baths. After hot-dipping in these baths, a thin Al-rich topcoat and a thick alloy layer rich in $Al_5Fe_2$ formed on the surface. A small amount of FeAl and $Al_3Fe$ was incorporated in the alloy layer. Silicon from the Al-1 at% Si bath was uniformly distributed throughout the entire coating. The hot dipping increased the microhardness of the steel by about 8 times. Heating at $700-1000^{\circ}C$, however, decreased the microhardness through interdiffusion between the coating and the substrate. The oxidation at $700-1000^{\circ}C$ in air formed a thin protective ${\alpha}-Al_2O_3$ layer, which provided good oxidation resistance. Silicon was oxidized to amorphous silica, exhibiting a glassy oxide surface.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.498-504
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• 2012

Oxide layers were prepared by an environmentally friendly plasma electrolytic oxidation (PEO) process on an Al-1050 substrate. The electrolyte for PEO was an alkali-based solution with $Na_2SiO_3$ (8 g/L) and NaOH (3 g/L). The influence of the electrical parameters on the phase composition, microstructure and properties of the oxide layers formed by PEO were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The voltage-time responses were recorded during various PEO processes. The oxides are composed of two layers and are mainly made of ${\alpha}$-alumina, ${\gamma}$-alumina and mullite phases. The proportion of each phase depends on various electrical parameters. It was found that the surface of the oxides produced at a higher current density and Ia/Ic ratio shows a more homogeneous morphology than those produced with the electrical parameters of a lower current density and lower Ia/Ic ratio. Also, the oxide layers formed at a higher current density and higher Ia/Ic ratio show high micro-hardness levels.

• Journal of the Korean Ceramic Society
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• v.34 no.10
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• pp.1067-1073
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• 1997

The yttria doped ceria (YDC) thin films were fabricated by electrochemical vapor deposition on the porous $\alpha$-Al2O3 substrate. The growth rates of the films obeyed a parabolic rate law, which constant was 259.0 $m^2$/hr at 120$0^{\circ}C$. As deposition temperature (above 110$0^{\circ}C$) increased, dense thin films were enhanced. Mole fraction of XYC13 had an effect upon surface morphologies. Electrical conductivity was increased with deposition temperature. The conductivity of YDC film prepared at XYC13=7.9$\times$10-2 was about 0.097 S/cm at 104$0^{\circ}C$ and the activation energy of conduction was calculated to be 26.6 kcal/mol.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.942-945
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• 2003

Nerve gas sensor based on tin oxide was fabricated and its characteristics were examined. Target gas was dimethylmethylphosphonate($C_3H_9O_3P$, DMMP) that is simulant gas of nerve gas. Sensing material was $SnO_2$ added ${\alpha}-Al_2O_3$ with $4{\sim}20wt.%$ and was physically mixed. And then it was deposited by screen printing method on alumina substrate. Sensor device was consisted of sensing electrode with interdigit(IDT) type in front and heater in back side. Total size of device was $7{\times}10{\times}0.6mm^3$. Crystallite size of fabricated $SnO_2$ were characterized by X-ray diffraction(XRD, Rigaku) and morphology of the $SnO_2$ powders was observed by a scanning electron microscope(SEM, Hitachi). Fabricated sensor was measured as flow type and sensor resistance change was monitored real time using LabVIEW program. The best conditions as added $Al_2O_3$ amounts and operating temperature changes were 4wt.% and $300^{\circ}C$ in DMMP 0.5ppm, respectively. The sensitivity was over 75%. Response and recovery times were about 1 and 3 min., respectively. Repetition measurement was very good with ${\pm}3%$ in full scale.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.363-363
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• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.