• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.67-74
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• 2018

Thermoelectric thin film devices of the in-plane configuration consisting of 8 pairs of n-type $Bi_2Te_3$ and p-type $Sb_2Te_3$ legs were processed on Si submounts by electrodeposition. The thermoelectric generation characteristics of the thin film devices were investigated with respect to the apparent temperature difference ${\Delta}T$ caused by LED lighting as well as the change of the leg thickness. When ${\Delta}T$ was 7.4 K, the open circuit voltages of 6.1 mV, 7.4 mV, and 11.8 mV and the maximum output powers of 6.6 nW, 12.8 nW, and 41.9 nW were measured for the devices with the thermoelectric legs of which thickness were $2.5{\mu}m$, $5{\mu}m$, and $10{\mu}m$, respectively.

• Korean Chemical Engineering Research
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• v.57 no.1
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• pp.78-84
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• 2019

Recently, bio-butanol is being promoted as environmentally friendly sustainable energy. However, some problems are still obstacle for commercialization of bio-butanol: the development of cheap biomass and enhancement of fermentation ratio and preparation of economical separation process for fermented products. In the conventional ABE biobutanol fermentation process, organic acids with acetone, butanol, and ethanol are produced. Therefore, it is necessary to study phase equilibrium data and mixture properties for the design and operation of separation process. However, there is lack of design data for organic acids except acetic acid contained system. In this study, therefore, binary solid-liquid equilibria (SLE) and mixture properties: the excess molar volumes ($V^E$), molar refraction deviation (${\Delta}R$) and deviation of viscosity (${\Delta}v$) at 298.15 for $C_3-C_6$ organic acid were reported. The experimental SLE data were correlated with the NRTL and UNIQUAC activity coefficient model with less than 0.5 K of root mean square deviation (RMSD). In addition, $V^E$, ${\Delta}R$ and ${\Delta}v$ for the same binary systems were satisfactorily fitted using the Redlich-Kister polynomial with less than ca. 0.004 standard deviation.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1561-1563
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• 2004

In this paper, we researched the dielectric properties and voltage dependence on slice XLPE sheet from 22[kV] and 154[kV] power cable. We studied effects for impurities and water for semiconductor shield through a dielectric properties experiment to estimate performance of insulating materials in power cable. Capacitance and tan${\delta}$ of 22[kV], 154[kV] were 53/43[pF] and $7.4{\times}10^{-4},\;2.1510^{-4}$. In these results, the trend was increased with the increase of temperature. The tan${\delta}$ of XLPF/ semiconductor layer was increased as compared with that of XLPE. Dielectric properties reliability of tan${\delta}$ was small.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.44-47
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• 1991

Electron injection and memory retention chracteristics of the MNOS devices with thin oxide layer of 23${\AA}$ thick and silicon nitride layer of 1000${\AA}$ thick which are fabricated for this experiment. As a result, pulse amplitude increase oxide current is dominated in linearly increasing region of $\Delta$V$\_$FB/the decreasing region after saturation was due to the increased silicon nirtide current. In low pulse ampiltude $\Delta$V$\_$FB/ is not variated on temperature, but as temperature and pulse amplitude increase. $\Delta$V$\_$FB/ is decreased after saturation. And the decay rate during 10$^4$sec after electron injection was ohiefly dominated by the back tunneling of emission from memory trap to silicon. Memory retention characteristics in V$\_$FB/ stage was better than that of OV retention regardless of injection conditions.

• Journal of Astronomy and Space Sciences
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• v.28 no.3
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• pp.203-216
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• 2011

To prepare for a future Korean lunar orbiter mission, semi-optimal lunar capture orbits using finite thrust are designed and analyzed. Finite burn delta-V losses during lunar capture sequence are also analyzed by comparing those with values derived with impulsive thrusts in previous research. To design a hypothetical lunar capture sequence, two different intermediate capture orbits having orbital periods of about 12 hours and 3.5 hours are assumed, and final mission operation orbit around the Moon is assumed to be 100 km altitude with 90 degree of inclination. For the performance of the on-board thruster, three different performances (150 N with $I_{sp}$ of 200 seconds, 300 N with $I_{sp}$ of 250 seconds, 450 N with $I_{sp}$ of 300 seconds) are assumed, to provide a broad range of estimates of delta-V losses. As expected, it is found that the finite burn-arc sweeps almost symmetric orbital portions with respect to the perilune vector to minimize the delta-Vs required to achieve the final orbit. In addition, a difference of up to about 2% delta-V can occur during the lunar capture sequences with the use of assumed engine configurations, compared to scenarios with impulsive thrust. However, these delta-V losses will differ for every assumed lunar explorer's on-board thrust capability. Therefore, at the early stage of mission planning, careful consideration must be made while estimating mission budgets, particularly if the preliminary mission studies were assumed using impulsive thrust. The results provided in this paper are expected to lead to further progress in the design field of Korea's lunar orbiter mission, particularly the lunar capture sequences using finite thrust.

• Journal of The Korean Astronomical Society
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• v.13 no.1
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• pp.15-26
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• 1980

The BV-photographic photometry was made for 1714 stars (V<19.5) in NGC 6752. The C-M diagram of this cluster shows an unusually extended blue horizontal branch $(V=13.5{\sim}17.8)$ with a wide gap $(V=16{\sim}16.7)$ and the well defined giant branch with gaps at V=13.85 and 16.2. The turnoff point is defined at $V=17.25{\pm}0.15$ and (B-V) = $0.46{\pm}0.02$. If we take $V_{HB}=13.85$ for NGC 6752, then ${\Delta}V=2.80,\;(B-V)_{0,g}=0.76\;and\;{\Delta}V_{TO}=3.40$ and the chemical abundance is estimated to be [Fe/H]=-1.67 or $Z=4.3{\times}10^{-4}\;and\;Y=0.26$. Some other physical parameters of this cluster are derived and compared with those for the well observed clusters M 3, M 13, M 15 and M 92.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.157-157
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• 2003

수평 전기로에서 CdIn2Te4 다결정을 용융법으로 합성하고 Bridgman법으로 tetragonal structure의 c축에 평행한 CdIn2Te4 단결정을 성장시켰다. c축에 평행한 시료의 광흡수와 광전류 spectra를 293K에서 10K까지 측정하였다. 광흡수 spectra에 의해 band gap Eg(T)는 varshni공식에 따라 계산한 결과 1.4753eV-(7.78$\times$$10^{-3}$eV/K)T$^2$/(T+2155K)임을 확인하였다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293K에서 각각 9.01$\times$$10^{16}$ /㎤, 219 $\textrm{cm}^2$/V.S였다. 광전류 스펙트럼으로부터 Hamilton matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting $\Delta$cr값이 0.2704 eV이며 spin-orbit $\Delta$so 값은 0,1465 eV임을 확인하였다. 10K일 때 광전류 봉우리들은 n=1일때 Al-, Bl-와 Cl-exciton 봉우리임을 알았다.

• Journal of Information Display
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• v.12 no.4
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• pp.209-212
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• 2011

The threshold voltage shift (${\Delta}V_{th}$) under positive-voltage bias stress (PBS) of InGaZnO (IGZO) thin-film transistors (TFTs) annealed at different temperatures in air was investigated. The dramatic degradation of the electrical performance was observed at the sample that was annealed at $700^{\circ}C$. The degradation of the saturation mobility (${\mu}_{sat}$) resulted from the diffusion of indium atoms into the interface of the IGZO/gate insulator after crystallization, and the degradation of the subthreshold slope (S-factor) was due to the increase in the interfacial and bulk trap density. In spite of the degradation of the electrical performance of the sample that was annealed at $700^{\circ}C$, it showed a smaller ${\Delta}V_{th}$ under PBS conditions for $10^4$ s than the samples that were annealed at $500^{\circ}C$, which is attributed to the nanocrystal-embedded structure. The sample that was annealed at $600^{\circ}C$ showed the best performance and the smallest ${\Delta}V_{th}$ among the fabricated samples with a ${\mu}_{sat}$ of $9.38cm^2/V$ s, an S-factor of 0.46V/decade, and a ${\Delta}V_{th}$ of 0.009V, which is due to the passivation of the defects by high thermal annealing without structural change.

• Bulletin of the Korean Mathematical Society
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• v.52 no.2
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• pp.661-677
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• 2015

In this paper, we consider the following Kirchhoff-type Schr$\ddot{o}$dinger system $$\{-\(a_1+b_1{\int}_{\mathbb{R^3}}{\mid}{\nabla}u{\mid}^2dx\){\Delta}u+{\gamma}V(x)u=\frac{2{\alpha}}{{\alpha}+{\beta}}{\mid}u{\mid}^{\alpha-2}u{\mid}v{\mid}^{\beta}\;in\;\mathbb{R}^3,\\-\(a_2+b_2{\int}_{\mathbb{R^3}}{\mid}{\nabla}v{\mid}^2dx\){\Delta}v+{\gamma}W(x)v=\frac{2{\beta}}{{\alpha}+{\beta}}{\mid}u{\mid}^{\alpha}{\mid}v{\mid}^{\beta-2}v\;in\;\mathbb{R}^3,\\u,v{\in}H^1(\mathbb{R}^3),$$ where $a_i$ and $b_i$ are positive constants for i = 1, 2, ${\gamma}$ > 0 is a parameter, V (x) and W(x) are nonnegative continuous potential functions. By applying the Nehari manifold method and the concentration-compactness principle, we obtain the existence and concentration of ground state solutions when the parameter ${\gamma}$ is sufficiently large.

• Journal of Astronomy and Space Sciences
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• v.19 no.4
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• pp.263-272
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• 2002

A total of 616 observations (308 in B, 308 in V) to. V523 Cas was made on three nights from October 19 to 21 in 1999 using the 1.8m telescope with 2K CCD camera of the Bohyunsan Optical Astronomy Observatory of KAO. With our data we constructed the BV light curves and determined 4 times of minimum light. We also obtained physical parameters of the system by combined analysis of both light and radial velocity curves using the Wilson-Devinney code.