• Journal of Korean Society of Environmental Engineers
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• v.28 no.3
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• pp.345-350
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• 2006

This study investigated the removal of recalcitrant organics in dyeing wastewater using a fluidized bed reactor(FBR) that contained cell-immobilized pellets. The pellets were manufactured and condensing the gel phase by mixing PEG-polymer and cells to form micro-porous PEG-polymer pellets whose size were ${\Phi}\;4mm{\times}H\;4mm$ on average. An industrial activated sludge without any pre-adaptation was used for the cell immobilization because it gave an equivalent removal efficiency to a pre-adapted sludges. The feed was obtained from an effluent of a biological treatment plant, which contained $SCOD_{Cr}$ of 330 mg/L and $SBOD_5$ of 20 mg/L. The $SCOD_{Cr}$ removal efficiency was over 45% and the effluent $COD_{Mn}$ concentration was less than 100 mg/L at HRTs from 6 to 24 hrs. The optimum HRT in the FBR was determined as 12 hrs considering the removal efficiency and cost. When a raw wastewater containing 768 mg/L of $COD_{Cr}$ was fed to the FBR, the effluent $COD_{Cr}$ concentration increased only slightly, giving a 70% of $COD_{Cr}$ removal or a 97% of $BCOD_5$ removal. This indicated that the FBR had an excellent capability of biodegradable organics removal also. In conclusion, the FBR could be applied to textile wastewater treatment in place of an activated sludge process.

• Korean journal of applied entomology
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• v.44 no.4 s.141
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• pp.257-264
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• 2005

In order to establish the successive rearing system brush-footed butterflies (Lepidoptera : Nymphalidae) were reared in a room. Artificial diets were developed for a year-round rearing. Bu-diet was best to rear these butterflies among 3 kinds of diet used. The freeze-dried host plant leaf powder in diet was better than heat-dried one $(60^{\circ}C)$ in the growth of larvae. The rearing results were best in the diet C/N ratio was 1:1. The 24-hrs old eggs could be stored for 5 days at $15^{\circ}C$ or for 3 days at $5^{\circ}C$ and showed 75% of hatchability. On the other hand, pupae could be stored for maximum 15 days at $15^{\circ}C$ because the emergence of abnormal adults appeared much more as the cold storage period got longer. And the adult was able to be stored until 60 days at refrigerator without relation of nectar-sucking period before cold-storage and storage temperature. Also a simple artificial ovipositing kit was devised by ${\Phi}9$ cm of petri-dish and a female oviposited $278{\pm}27$ of eggs with adding the ether extract of host plant to this kit. The systematic successive rearing method of brush-footed butterflies in a room was completed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.2
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• pp.73-77
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• 2012

Co-(0.8 wt%) and Ce-(0.4 wt%) doped cubic zirconia ($ZrO_2$ : $Y_2O_3$ = 80 : 20, 70 : 30, 60 : 40, 50 : 50 wt%) single crystals grown by a skull melting method were heat-treated in $N_2$ at $1000^{\circ}C$ for 5 hrs. The orange, yellowish brown and brown colored as-grown single crystals were changed into either brownish red, yellow and green color after the heat treatment. Before and after the heat treatment, the YSZ (yttria-stabilized zirconia) single crystals were cut for wafer form (${\phi}6.5mm{\times}t2mm$). The optical and structural properties were examined by UV-VIS spectrophotometer and X-ray diffraction. Absorption by $Ce^{3+}(^2F_{5/2,7/2}(4f){\rightarrow}^2T_g(5d^1))$, $Co^{2+}(^4A_2(^4F){\rightarrow}^4T_1(^4F)$ or $^4T_1(^4P))$ and $Co^{3+}$, change of ionization energy and lattice parameter were confirmed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• Journal of the Korean Chemical Society
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• v.25 no.2
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• pp.110-118
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• 1981

Kinetics and mechanism for the reaction of substituted phenacyl bromides with substituted pyridines have been determined at 25, 35 and $45^{\circ}C$ in methanol and dimethylformamide by the conductivity method. The rate constants for the reaction of various pyridines with phenacyl bromide shown that electron-donating substituents in the pyridine increase the rate, while electron-attracting one decrease in both solvents. The effect of substituents in substrate, the rate being increased by electron-attracting substituents. This is as expected for nucleophilic attack of amines on the carbon atom. Isokinetic and $Br{\psi}nsted$ linear relationship were shown in the reaction of phenacyl bromide with pyridines in both solvent in which isokinetic temperature were obtained 614, $202^{\circ}K$ and ${\beta}$ values were 0.29, 0.36 in methanol and dimethylformamide respectively. In the case of the reaction of substituted phenacyl bromide with pyridines, isokinetic temperature decreases with increasing electron-attracting ability of the substituents in the phenacyl bromide, while the ${\beta}$ values were reverse. From the above results, it can be inferred that N…C bond formation decreases progressively from p-chloro- to p-methoxyphenacyl bromide and the bond formation predominates in DMF than methanol. The ${\rho}$ values of Hammett equation of the reaction of phenacyl bromide with substituted pyridines are negative in both solvent, but its value was larger negative in DMF than methanol and the ${\rho}$ value of that of substitutted substrates with pyridine was 0.3, the low value is ascribed to direct $S_N2$ attack of the nitrogen atom in pyridine ring at the methylene carbon.

• Korean journal of applied entomology
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• v.42 no.2
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• pp.133-138
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• 2003

To establish the successive rearing of red-striped golden stink bug, Poecilocoris lewisi Distant, developmental characteristics, host plant and oviposition preference were investigated. Raw peanuts were supplied to the insect as a substitute food at 25$\pm$$1^{\circ}C$, 60$\pm$5% R.H. and under 16Lㆍ8D photo regimen. Total developmental period was 48 days: 8.2$\pm$0.4, 5.4$\pm$0.2, 8. $\pm$0.5, 6.4$\pm$0.4, 7.4$\pm$0.3 and 12.6$\pm$0.8 days for egg, first though fifth instar, respectively. The instar survival rate was 57.1% and the sex ratio was estimated to be 53 : 47 (male : female). Adult longevity was on the average 30.8 in male and 35.4 days in female, respectively. Egg of P. lewisi was globular ($\phi$1.8-1.9mm) with milky white in color The number of eggs oviposited per clutch was mostly 14. Pre-oviposition period was 25.8 days and mean frequencies of oviposition were 4.4. Female preferred to oviposit on the host plant when available, but oviposited on the artificial leaf successively when the host is not around. On the other hand P. lewisi preferred to suck the nectar of stem or fruit of Phellodendron amurense Ruprecht, Zanthoxylum schinifolium Siebold et zuccarini, Cornus officinalis Siebold et zuccarini and Cornus controversa Hemsley among the 18 plant species tested.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.133-133
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• 2008

Recently, as the down-scailing of field-effect transistor devices continues, Schottky-barrier field-effect transistors (SB-FETs) have attracted much attention as an alternative to conventional MOSFETs. SB-FETs have advantages over conventional devices, such as low parasitic source/drain resistance due to their metallic characteristics, low temperature processing for source/drain formation and physical scalability to the sub-10nm regime. The good scalability of SB-FETs is due to their metallic characteristics of source/drain, which leads to the low resistance and the atomically abrupt junctions at metal (silicide)-silicon interface. Nevertheless, some reports show that SB-FETs suffer from short channel effect (SCE) that would cause severe problems in the sub 20nm regime.[Ouyang et al. IEEE Trans. Electron Devices 53, 8, 1732 (2007)] Because source/drain barriers induce a depletion region, it is possible that the barriers are overlapped in short channel SB-FETs. In order to analyze the SCE of SB-FETs, we carried out systematic studies on the Schottky barrier overlapping in short channel SB-FETs using a SILVACO ATLAS numerical simulator. We have investigated the variation of surface channel band profiles depending on the doping, barrier height and the effective channel length using 2D simulation. Because the source/drain depletion regions start to be overlapped each other in the condition of the $L_{ch}$~80nm with $N_D{\sim}1\times10^{18}cm^{-3}$ and $\phi_{Bn}$ $\approx$ 0.6eV, the band profile varies as the decrease of effective channel length $L_{ch}$. With the $L_{ch}$~80nm as a starting point, the built-in potential of source/drain schottky contacts gradually decreases as the decrease of $L_{ch}$, then the conduction and valence band edges are consequently flattened at $L_{ch}$~5nm. These results may allow us to understand the performance related interdependent parameters in nanoscale SB-FETs such as channel length, the barrier height and channel doping.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.38-43
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• 2013

In this study we aims to examine the effects of $Co_3O_4$ and NiO doping on the defects and electrical properties in ZnO-$Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5) varistors. It seemed to form ${Zn_i}^{{\cdot}{\cdot}}$(0.20 eV) and ${V_o}^{\cdot}$(0.33 eV) as dominant defects in Co and Ni co-doped ZBS system, however only ${V_o}^{\cdot}$ appeared in Co- or Ni-doped ZBS. Even though the same defects it was different in capacitance (1.5~4.5 nF) and resistance ($0.3{\sim}9.5k{\Omega}$). The varistor characteristics were improved with Co and Co+Ni doping (non-linear coefficient, ${\alpha}$= 36 and 29, relatively) in ZBS. The various parameters ($N_d=1.43{\sim}2.33{\times}10^{17}cm^{-3}$, $N_t=1.40{\sim}2.28{\times}10^{12}cm^{-2}$, ${\Phi}b$=1.76~2.37 V, W= 98~118 nm) calculated from the C-V characteristics in our systems did not depend greatly on the type of dopant, which were in the range of a typical ZnO varistors. It should be derived a improved C-V equation carefully for more reliable parameters because the variation of the varistor capacitance as a function of the applied dc voltage is depend on the defect, frequency, and temperature.

• Journal of Periodontal and Implant Science
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• v.35 no.3
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• pp.525-536
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• 2005

여러 연구들을 통해 많은 학자들이 임프란트 안정성(stability)은 표면의 특징에 달려있다고 생각하게 되었다. 표면의 구조, 에너지, 산화물(oxide) 두께와 표면성상(topography)등 임프란트의 표면의 특징은 임프란트와 골조직의 반응에서 중요한 역할을 하는 것이 알려짐에 따라 티타뮨 임프란트의 표면의 처리 방법에 큰 관심을 가지게 되었다. 그 중에서 티타늄 임프란트 표면의 산화피막화(anodization)가 한 방법으로 대두되었다. 이 방법은 전기화학적 방식으로 임프란트 표면에 거칠고(rough)두꺼우며(thick), 기공(pore)을 가지는 산화물 막을 형성하는 것으로 산화물의 두께는 coronal 부분(l-2 ${\mu}m$)으로부터 apical부분(7-10 ${\mu}m$)까지 증가하게 된다. 산화피막의 표면에는 다양한 크기의 수많은 기공이 주로 1-2 ${\mu}m$ 두께로 임프란트의 apical 부분에서 존재하며, 임프란트 표면의 거칠기는 conical 위부분에서 apical 부분까지 계속 증가한다(평균 Ra value=1.2 ${\mu}m$). 또 다른 표면 처리 방법으로는 blasting 후에 etching을 한 SLA 표면이 있다. 이 연구의 목적은 일반적으로 많이 이용되고 있는 anodized 표면과 SLA 표면의 조직학적 반응을 비교 분석하는 것이다. 24개 임프란트를(anodized surfaced implant-12개 , SLA-12개, 8mm ${\times}\;{\Phi}$ 4.3) 6마리 토끼의 오른쪽과 왼쪽 femur에 식립하였다. 12주후에 동물들을 희생하여 EXACT cutting-grinding system을 이용하여 샘플을 절단하고 800, 1200 및 4000 번 연마제(abrasive) paper로 20-50 ${\mu}m$ 까지 grinding하였다. 샘플은 Multiple staining 용액으로 염색하여 SLA 임프란트 군과 비교하였다. 골과 임프란트 사이에 연결을 TDI 프로그램을 이용하여 %로 측정하였다. SLA 임프란트 군 경우에는 골과 임프란트 사이의 연결이 $74{\pm}19%$ 이고, 양극 산화한 임프란트 군 경우에는 $77{\pm}9%$이었다. 양극 산화한 티타늄 임프란트의 골 접촉률이 SLA 표면 임프란트 경우과 통계학적으로 유의한 차이는 보이지 않았다.

• Korean Journal of Agricultural and Forest Meteorology
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• v.10 no.4
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• pp.132-140
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• 2008

Two different sensitivity classes of black cherry (Prunus serotina) under the natural growing environmental conditions were assessed adjacent to Air Monitoring Station located at Horton research center in Giles County, Virginia, USA. Ambient ozone concentrations, leaf gas exchange, and visible foliar injury were measured on-site during the growing seasons of 2000, 2001, and 2002. Ambient ozone exposures were sufficient to induce typical foliar visible injury corresponding with the reduction in photosynthetic activities only in sensitive black cherry. There were positive correlations between increasing cumulative ozone concentration and percent reduction in maximum net photosynthetic rates ($Pn_{MAX}$) under saturating light conditions and in quantum yield for carbon reduction (${\Phi}CO_2$) of sensitive black cherry compared to tolerant black cherry. There was a negative correlation between chlorophyll content and percent leaf injury in sensitive black cherry. Furthermore, $Pn_{MAX}$ was inversely related to percent leaf injury.