• East Asian mathematical journal
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• 제1권
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• pp.35-42
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• 1985

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.906-911
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• 2004

In this paper, we used only PR as etching mask, while it used usually Cr/AU as etching mask, and in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. we designed microchannel size width max 10um, min 5um depth max 10um, reservoir size max 100um, min 2mm. Fabrication of microfluidic devices in glass substrate by glass wet etching methods and glass to glass fusion bonding. The p-i-n diode has higher sensitivity than photodiode. Considering these results, we fabricated p-i-n diodes on the high resistive($4k{\Omega}{\cdot}cm$) wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of p-i-n diode can be decreased by the application of finger pattern has parallel resistance structure from $571\Omega$ to $393\Omega$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.100-103
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• 2003

Signal detection technologies such as fluorescence, charge and electrochemical detection used in the monolithic capillary electrophoresis system to convert the biochemical reaction into the electrical signal. The fluorescence detection using photodiodes that measure fluorescence emitted from eluting molecules is widely used for the monolithic capillary electrophoresis system. In this paper, in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. The p-i-n diode has higher sensitivity than photodiode. Considering these results, we fabricated p-i-n diodes on the high resistive$(4k{\Omega}{\cdot}cm)$ wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of p-i-n diode can be decreased by the application of finger pattern has parallel resistance structure from $571{\Omega}$ to $393{\Omega}$.

• Progress in Superconductivity
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• 제4권1호
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• pp.74-79
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• 2002

High-speed probe made to test single flux quantum(SFQ) circuits was comprised of semi-rigid coaxial cables and microstrip lines. The impedance was set at 50 $\Omega$to carry high-speed signals without much loss. To do performance test of high-speed probe, we have attempted to fabricate a test chip which has a coplanar waveguide(CPW) structure. Electromagnetic simulation was done to optimize the dimension of CPW so that the CPW structure has an impedance of 50$\Omega$, matching in impedance with the probe. We also used the simulation to investigate the effect of the width of signal line and the gap between signal line and ground plane to the characteristics of CPW structure. We fabricated the CPW structure with a gold film deposited on Si wafer whose resistivity was above $1.5\times$10$_4$$\Omega$.cm. The magnitudes of S／sub 21／ of CPW at 6 ㎓ in simulations and in the actual measurements done with a network analyzer were: -0.1 ㏈ and -0.33 ㏈ (type A),-0.2 ㏈ and -0.48 ㏈ (type B), respectively. Using the test chip, we have successfully tested the performance of high-speed probe made for SFQ circuits. The probe showed the good performance overthe bandwidth of 10 ㎓.

• 대한수학회논문집
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• 제16권4호
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• pp.679-690
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• 2001

Doubly stochastic matrices are n$\times$n nonnegative ma-trices whose row and column sums are all 1. Convex polytope $\Omega$$_{n}$ of doubly stochastic matrices and more generally (R,S), so called transportation polytopes, are important since they form the domains for the transportation problems. A theorem by Birkhoff classifies the extremal matrices of , $\Omega$$_{n}$ and extremal matrices of transporta-tion polytopes (R,S) were all classified combinatorially. In this article, we consider signed version of $\Omega$$_{n}$ and (R.S), obtain signed Birkhoff theorem; we define a new class of convex polytopes (R,S), calculate their dimensions, and classify their extremal matrices, Moreover, we suggest an algorithm to express a matrix in (R,S) as a convex combination of txtremal matrices. We also give an example that a polytope of signed matrices is used as a domain for a decision problem. In this context of finite reflection(Coxeter) group theory, our generalization may also be considered as a generalization from type $A_{*}$ n/ to type B$_{n}$ D$_{n}$. n/.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.429-429
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• 2012

To investigate the gettering effect of B-doped n-type monocrystalline silicon wafer, we made the p-n junction by diffusing boron into n-type monocrystalline Si substrate and then oxidized the boron doped n-type monocrystalline silicon wafer by in-situ wet and dry oxidation. After oxidation, the minority carrier lifetime was measured by using microwave photoconductance and the sheet resistance by 4-point probe, respectively. The junction depth was analyzed by Secondary Ion Mass Spectrometry (SIMS). Boron diffusion reduced the metal impurities in the bulk of silicon wafer and increased the minority carrier lifetime. In the case of wet oxidation, the sheet resistance value of ${\sim}46{\Omega}/{\Box}$ was obtained at $900^{\circ}C$, depostion time 50 min, and drive-in time 10 min. Uniformity was ~7% at $925^{\circ}C$, deposition time 30 min, and drive-in time 10 min. Finally, the minority carrier lifetime was shown to be increased from $3.3{\mu}s$ for bare wafer to $21.6{\mu}s$ for $900^{\circ}C$, deposition 40 min, and drive-in 10 min condition. In the case of dry oxidation, for the condition of 50 min deposition, 10 min drive-in, and O2 flow of 2000 SCCM, the minority carrier lifetime of 16.3us, the sheet resistance of ${\sim}48{\Omega}/{\Box}$, and uniformity of 2% were measured.

• Journal of the Optical Society of Korea
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• 제14권4호
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• pp.431-437
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• 2010

A stack of gradient-index (GRIN) rod lenses cannot be used for coherent anti-Stokes Raman scattering (CARS) microendoscopy for insertion to internal organs through a surgical keyhole with minimal invasiveness. That's because GRIN lens has large amount of inherent chromatic aberrations in spite of absolutely requiring a common focus for pump and Stokes beam with each frequency of ${\omega}_p$ and ${\omega}_S$. For this endoscopic purpose, we need to develop a long slender probe-type objective, namely probe-type microscope objective (PMO). In this paper, we introduce the structure, the working principle, and the design techniques of PMO which is composed of a probe-type lens module (PLM) and an adaptor lens module (ALM). PLM is first designed for a long slender type and ALM is successively designed by using several design parameters from PLM for eliminating optical discords between scanning unit and PLM. A combined module is optimized again to eliminate some coupling disparities between PLM and ALM for the best PMO. As a result, we can obtain a long slender PMO with perfectly diffraction-limited performance for pump beam of 817 nm and Stokes beam of 1064 nm.

• 동력기계공학회지
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• 제5권1호
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• pp.21-26
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• 2001

This paper represents the turbulent intensity, the turbulent kinetic energy and Reynolds shear stress in the X-Y plane of cone type swirl gas burner measured by using X-probe from the hot-wire anemometer system. The experiment is carried out at flowrate 350 and $450{\ell}/min$ respectively in the test section of subsonic wind tunnel. The turbulent intensity and the turbulent kinetic energy show that the maximum value is formed in the narrow slits distributed radially on the edge of a cone type swirl burner, hence, the combustion reaction is anticipated to occur actively near this region. And the turbulent intensities ${\upsilon}\;and\;{\omega}$ are disappeared faster than the turbulent intensity u due to the inclined flow velocity ejecting from the swirl vanes of a cone type baffle plate of burner. Moreover, the Reynolds shear stress $u{\upsilon}$ is distributed about three times as large as the Reynolds shear stress $u{\omega}$ in the outer region of the cone type gas burner.

• 한국전기전자재료학회논문지
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• 제19권9호
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• pp.825-831
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• 2006

As an increase of chip complexity and level of chip integration, chip input/output (I/O) pad pitches are also drastically reduced. With arrival of high complexity SoC (System on Chip) and SiP (System in Package) products, conventional horizontal type probe card showed its limitation on probing density for wafer level test. To enhance probing density, we proposed new vertical type probe card that has the $70{\mu}m$ probe needle with tungsten wire in $80{\mu}m$ micro-drilled hole in ceramic board. To minimize alignment error, micro-drilling conditions are optimized and epoxy-hardening conditions are also optimized to minimize planarity changes. To apply wafer level test for target devices (T5365 256M SDRAM), designed probe card was characterized by probe needle tension for test, contact resistance measurement, leakage current measurement and the planarity test. Compare to conventional probe card with minimum pitch of $50{\sim}125{\mu}m\;and\;2\;{\Omega}$ of average contact resistance, designed probe card showed only $22{\mu}$ of minimum pitch and $1.5{\Omega}$ of average contact resistance. And also, with the nature of vertical probing style, it showed comparably small contact scratch and it can be applied to bumping type chip test.

• 대한수학회지
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• 제33권2호
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• pp.291-307
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• 1996

In this paper, we shall show the existence of solutions of the following nonlinear partial differential equation $$ {^{divA(-\Delta u) = f(x, u, \Delta u) in \Omega}^{u = 0 on \partial\Omega} $$ where $f(x, u, \Delta u) = -u$\mid$\Delta u$\mid$^{p-2} + h, p \geq 2, h \in L^\infty$.