• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1432-1433
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• 2006

$Li_{2}CO_3$ doped $Ba_{0.5}Sr_{0.5}TiO_3$ ceramics were fabrication by sol-gel method. Sintering temperature must be suited to the LTCC technology. Structure and dielectric properties were investigated for effect of $Li_{2}CO_3$ dopants at BST. Structure of $Li_{2}CO_3$ doped $Ba_{0.5}Sr_{0.5}TiO_3$ ceramics were dense and homogeneous with almost no pore. Relative permittivity was decreased and dielectric loss was increased with increasing $Li_{2}CO_3$ doping rations. In the case of the 3wt% $Li_{2}CO_3$ doped $Ba_{0.5}Sr_{0.5}TiO_3$ ceramics sintered at $900^{\circ}C$, relative permittivity and dielectric loss were 907 and 0.003 at 100 kHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.711-717
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• 1998

BST(70/30) and BST(50/50) thin films were prepared by Sol-Gel method and studied about the microstructural and dielectric properties with Pt and ITO bottom electrodes. The stock solution was synthesized and spin coated on the Pt/Ti$SiO_2$/Si and Indium Tin Oxide(ITO)/ glass substrate. the coated films were dries at 350$^{\circ}C$ for 10 minutes and annealed at $750^{\circ}C$ for 1 hour for the crystallization. The thin films coated on ITO substrate were crystallized easily and the packing density and roughness of surface were better that those of films coated on Pt substrates. In the BST(50/50) composition the structural properties were similar to the BST(70/30) composition and grain size were decreased with increasing the contents of Sr. The dielectric constant was higher in the BST(50/50) composition compared with the BST(70/30) composition. Using the ITO substrate, the dielectric constant was higher than the Pt substrate while the dielectric loss was showed a reverse trend. The dielectric constant with and increase of temperature was decreased slowly.

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.130-130
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• 1997

• Applied Chemistry for Engineering
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• v.3 no.3
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• pp.412-421
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• 1992

The superconducting thin films have shown a growing possibility for practical application in microelectronic fields in recent years. In this study, the high Tc superconducting Y-Ba-Cu-O thin films were prepared on various substrates by chemical vapor deposition method using organic metal chelates of $Y(thd)_3$, $Ba(thd)_2$, and $Cu(thd)_2$ as source materials. The deposition reactions were carried out on single crystalline MgO(100), YSZ(100), $SrTiO_3(100)$, and polycrystalline $SrTiO_3$ substrates. Deposition thickness of thin films was linearly increased with the increase of deposition time. It turned out that the Y-Ba-Cu-O thin films on MgO(100), YSZ(100), and $SrTiO_3(100)$ single crystal substrates showed superconductivities above liquid nitrogen temperature($T_{c,onset}=87{\sim}89K$, $T_{c,zero}=85{\sim}86K$), but the one on polycrystalline $SrTiO_3$ substrate did not.

• Membrane Journal
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• v.22 no.1
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• pp.8-15
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• 2012

Tubular $Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$ membranes with $La_{0.6}Sr_{0.4}Ti_{0.3}Fe_{0.7}O_{3-{\delta}}$ porous coating layer were prepared by extrusion and dip coating technique. XRD and SEM result showed the tubular membrane possessed the perovskite structure and porouscoating layer (thickness= about $2{\mu}m$) in surface. The oxygen permeation test was measured at condition of ambient air (feed side) and vacuum (permeate side) in the temperature range from 750 to $950^{\circ}C$. The oxygen permeation flux of $Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$ tubular membrane with $La_{0.6}Sr_{0.4}Ti_{0.3}Fe_{0.7}O_{3-{\delta}}$ porous coating layer reached maximum $3.2mL/min{\cdot}cm^2$ at $950^{\circ}C$ and was higher than non-coated $Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$ tubular membrane. Long-term stability test result indicated that the oxygen permeation flux was quite stable during the 11 day.

• Journal of Aerospace System Engineering
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• v.13 no.2
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• pp.43-50
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• 2019

Satellite and aircraft components are greatly affected by the possibility for missions and safety due to temperature effects. In the field of fuel cells, research is actively carried out for UAV. For the efficiency and stability of the fuel cells, the temperature for operations must be confirmed. In this paper, a smart paint was fabricated with $BaTiO_3$ and $SrTiO_3$ ceramics in order to take advantage of the rapid characteristics of the PTC thermistor, which is the resistance changes abruptly above the Curie point. A coating agent was prepared to prevent the paint from peeling off the samples and the coated models were checked for resistance changes. Moreover, the resistance change of the $BaTiO_3$ and $SrTiO_3$ with temperature conditions was measured before and after coating.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.370-374
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• 2002

This paper describes the design and fabrication of distributed analog phase shifter circuit. The phase shifter consist of coplanar waveguide(CPW) lines that are periodically loaded with voltage tunable (Ba,Sr)TiO$_3$ thin film interdigital(IDT) capacitors deposited by the pulsed laser deposition(PLD) on (001) MgO single crystals. The phase velocity on these IDT loaded CPW lines is a function of applied bias voltage, thus resulting in analog phase shifting circuits. The measured differential phase shift is 48$^{\circ}$ and the insertion loss decreases from -5㏈ to -3㏈ with increasing bias voltage from 0 to 40 V at 100㎐.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.217-220
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• 1997

(Ba,Sr)TiO$_3$ thin film capacitors were prepared on SiO$_3$/Si(100)wafer by RF sputtering technique. The structural and crystallographic properties were studied with deposition conditions and annealing temperatures. Microstructural properties of (Ba,Sr)TiO$_3$ thin films were investigated by the SEM, XRD. The thickness and grain size were studied for the varying of RF power and temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.2
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• pp.111-115
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• 2000

$BaTIO_3$ thin films were prepared on (100) $BaTIO_3$ substrates by coating- pyrolysis process using metal-organic compounds of Ba and Ti. The amorphous films prefired at $450^{\circ}C$were crystallized above $700^{\circ}C$ under oxygen partial pressure of $2\times 10^{-4}$. The lattice parameters of the perpendicular axis for the $BaTIO_3$ thin films heat-treated below $800^{\circ}C$ were closer to a value of cubic $BaTIO_3$, whereas those above $800^{\circ}C$ were closer to a value of tetragonal BaTiG. The results of XRD P scan and pole-figure analyses indicated that BaTiO, thin films have an epitaxial relationship with the $SrTiO_3$ substrates. The $BaTIO_3$thin films annealed at$800^{\circ}C$ showed the surface with island-like grains about 0.4$mu \textrm{m}$ and the cross section of 0.8 $mu \textrm{m}$ thickness with granular grains.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.798-800
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• 1998

(Ba,Sr)$TiO_3$ thin films were etched with $Cl_2$/Ar gas mixing ratio in an inductively coupled plasma (ICP) by varying the etching parameter such as f power, do bias voltage, and chamber pressure. The etch rate was $560{\AA}/min$ under Cl_2/(Cl_2+Ar)$ gas mixing ratio of 0.2, rf power of 600 W, do bias voltage of 250 V, and chamber pressure of 5 mTorr, At this time, the selectivity of BST to Pt, $SiO_2$ was respectively 0.52, 0.43. The surface reaction of the etched (Ba,Sr)$TiO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS).