In this paper we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity between electrode and ferroelectric film. $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ (shortly PZT) ferroelectric film was fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of PZT films. Removal rate, WIWNU% and surface roughness have been found to depend on slurry abrasive types and their hardness, especially, surface roughness and planarity were strongly depends on its pH value. A maximum in the removal rate is observed in the silica slurry, in contrast with the minimum removal rate occurs at ceria slurry. We found that the surface roughness of PZT films can be significantly reduced using the CMP technique.

Using the $Ba_{0.5}Sr_{0.5}TiO_3$(BST) powders prepared by the Sol-Gel method, the BST thick films were fabricated on the $Al_2O_3 $substrates coated with Pt by the screen printing method. Compared with pure BST thick films, the structural and dielectric properties of the BST thick films doped with $1{\sim}10$ wt % MgO were investigated. It was observed that the Mg substitution into BST causes a shift in the cubic-tetragonal BST phase transition peak to a lower temperature. The microstructure of the BST substituted with Mg was homogeneous and dense. Mg substitution into BST had a significant effect on the grain size reduction. Dielectric constant was decreased with increasing the MgO content and temperature. In the case of BST thick films doped with 1 wt% MgO, the relative permittivity and dielectric loss were 1581 and 1.4 % at 1 MHz.

ZnO thin films were prepared by RF magnetron sputter deposition on p-Si(100) wafer with various cooling rates of substrate temperature such as the substrates were pre-heated to $400^{\circ}C$ before the deposition and then cooled down naturally or slowly to $300^{\circ}C,\;200^{\circ}C,\;100^{\circ}C$, and R.T. by the temperature controller during the deposition. Crystalline and micro-structural characteristics of the films were investigated by XRD and SEM. ZnO films which cooled down naturally or slowly by the temperature controller during the deposition, especially the film were deposited with cooling down from $400^{\circ}C\;to\;200^{\circ}C$ slowly. showed the most outstanding c-axis preferred orientation.

Plasma enhanced chemical vapor deposition(PECVD) is a well established technique for the deposition of hydrogenated film of silicon nitride (SiNx:H), which is commonly used as an antireflection coating as well as passivating layer in crystalline silicon solar cell. PECVD-SiNx:H films were investigated by varying the deposition and annealing conditions to optimize for the application in silicon solar cells. By varying the gas ratio (ammonia to silane), the silicon nitride films of refractive indices 1.85 - 2.45 were obtained. The film deposited at $450^{\circ}C$ showed the best carrier lifetime through the film deposition rate was not encouraging. The film deposited with the gas ratio of 0.57 showed the best carrier lifetime after annealing at a temperature of $800^{\circ}C$. The single crystalline silicon solar cells fabricated in conventional industrial production line applying the optimized film deposition and annealing conditions on large area substrate of size $125mm{\times}125mm$ (pseudo square) was found to have the conversion efficiencies as high as 17.05 %. Low cost and high efficiency silicon solar cells fabrication sequence has also been explained in this paper.

In this paper, we have investigated thermal properties by changing the content of carbon nanotube, which is component part of semiconductive shield in underground power transmission cable. Heat capacity (${\Delta}H$), glass transition temperature (Tg) and melting temperature (Tm) were measured with the samples of eight, through DSC (Differential Scanning Calorimetry), and the measurement ranges of temperature selected from $-100[^{\circ}C]\;to\;100[^{\circ}C]$ with heating temperature selected per $4[^{\circ}C/min]$ Also, high temperature, heat degradation initiation temperature, and heat weight loss were measured by TGA (Thermogravimetric Analysis) in the temperature from $0[^{\circ}C]\;to\;700[^{\circ}C]$ with rising temperature of $10[^{\circ}C/min]$. As a result, the Glass transition temperatures of the sample were showed near $-20[^{\circ}C]{\sim}25[^{\circ}C]$, and the heat capacity and melting temperature from the DSC was increased according to increasing the content of carbon nanotube, while, thermal diffusivity was increased according to increasing the content of carbon nanotube. Also, heat degradation initiation temperature from the TGA results was increasing according to increasing the content of carbon nanotube with CNT/EEA. Therefore, heat stabilities of EVA, which contained the we VA (vinyl acetate), showed the lowest.

The $(Sr_{0.85}Ca_{0.15})TiO_3(SCT)$ thin films were deposited on Pt-coated electrode $(Pt/TiN/SiO_2/Si)$ using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of $100{\sim}500[^{\circ}C]$. The optimum conditions of RF power and $Ar/O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$ at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The maximum dielectric constant of SCT thin film as obtained by annealing at $600^{\circ}C$.

Macro interfaces between two different bulk materials which affect the stability of insulation system exist inevitably in the complex insulation system using in extra high voltage (EHV) electric devices. In this paper, Interface between epoxy and ethylene propylene diene terpolymer (EPDM) was selected as an interface in electrical insulation system and the AC dielectric strength of the interface was investigated. Air compress system was used to give pressure to the interface. Specimens were prepared in various ways to generate different surface conditions for each type of interface. Increasing interfacial pressure, decreasing surface roughness and spreading oil over surfaces improve the AC interfacial dielectric strength. Especially, the dielectric strength was saturated at certain interfacial pressure.

Dendrimers represent a new class of synthetic macromoleculcs characterized by a regularly branched treelike structure. Multiple branching yields a large number of chain ends that distinguish dendrimers from conventional star-like polymers and microgels. The azobenzene dendrimer is one of the dendrimeric macromolecules that include the azo-group exhibiting a photochromic character. Due to the presence of the charge transfer element of the azo-group and its rod-shaped structure, these compounds are expected to have potential interest in electronics and photoelectronics, especially in nonlinear optics. In the present paper, we give pressure stimulation to organic thin films and detect the induced displacement current. Functional photoisometrization organic molecular the photo-stimulus to organic monomolecular L films and LB films of dendrimer and 8A5H were performed. The 8A5H organic monolayer in case of pressure stimulus occurred that positive course but in case of the photo-stimulus compared positive and negative. It is assumed that generation forms of displacement current were measured when photo-stimulus for impression.

we have been developed on the ultra high concentration ozone generator system which is the core technology in the realization of the semiconductor photoresist strip process using the ozone-vapor chemistry. The proposed ozone generator system has the structure of the surface discharge type which adopt the high purity ceramic dielectric tube. We investigate the performance of the proposed ozone generator system experimentally and the results show that the system has very high ozone concentration characteristics of $19.7[wt%/O_2]$ at the flow rate of $0.3[{\ell}/min]$ of each discharge cell. As a result of the silicon wafer photoresist strip test, we obtained the strip rate of about 400[nm/min] at the ozone concentration of $16[wt%/O_2]$ and flow rate of $8[{\ell}/min]$. So, we confirmed that it's possible to use the proposed high concentration ozone generator system for the ozone-vapor photoresist strip process in the semiconductor and FPD industry.

When the energy of the nanoseconds high voltage pulse with hundreds picoseconds of the pulse rise time is emitted into the free space via an antenna, an ultra wide band electromagnetic wave is generated. This electromagnetic wave is expected to be used in transmitting vast amount of informations to far distance, high performance radars, post-packaging pasteurization of food, the detection of underground buried objects, searching of underground water veins or caves, the treatment of waste water or polluted gases and so forth. Additionally, this technology can be used in EMI(electromagnetic interference) evaluation of measuring instruments or printed circuit boards.

The resistance-capacitance (RC) delay of signals through interconnection materials becomes a big hurdle for high speed operation of semiconductors which contain multi-layer interconnections in smaller scales with higher integration density. Low-k materials are applied to the inter-metal dielectric (IMD) materials in order to overcome the RC delay. Relaxation continuum (RCT) model that includes neutral-species transport model have developed to model the etching process in a capacitively coupled plasma (CCP) device. We present the parametric study of the modeling results of a two-frequency capacitively coupled plasma (2f-CCP) with $N_2/H_2$ gas mixture that is known as promising one for organic low-k materials etching. For the etching of low-k materials by $N_2/H_2$ plasma, N and H atoms have a big influence on the materials. Moreover the distributions of excited neutral species influence the plasma density and profile. We include the neutral transport model as well as plasma one in the calculation. The plasma and neutrals are calculated self-consistently by iterating the simulation of both species till a spatio-temporal steady state profile could be obtained.

We investigated the output characteristics of Nd:YAG lasers at wavelength of 1444 nm, which were pumped by 450 Xe-flashlamp, 700 torr Xe-flashlamp and 700 torr Kr-flashlamp. With a Xe-flashlamp of 700 torr of gas pressure, the pulse energy of 0.738 J was obtained with repetition rate of 9.16 Hz and pumping pulse width of 400 ms. In case pumping pulse width of 5 ms and repetition rate of 1 Hz, 700 torr Kr-flashlamp showed the highest pulse energy of 1.44 J.