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Microstructure and Structural Properties of SCT Thin Film  

Kim, Jin-Sa (광운대 전기공학과)
Oh, Yong-Cheol (광운대 전기공학과)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.55, no.12, 2006 , pp. 576-580 More about this Journal
Abstract
The $(Sr_{0.85}Ca_{0.15})TiO_3(SCT)$ thin films were deposited on Pt-coated electrode $(Pt/TiN/SiO_2/Si)$ using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of $100{\sim}500[^{\circ}C]$. The optimum conditions of RF power and $Ar/O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$ at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The maximum dielectric constant of SCT thin film as obtained by annealing at $600^{\circ}C$.
Keywords
Thin Film; Annealing; Deposition Temperature; Dielectric Constant;
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Times Cited By KSCI : 1  (Citation Analysis)
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