Transactions on Electrical and Electronic Materials

  • 제15권1호
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  • Pages.16-19
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  • 2014
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Improved Memory Characteristics by NH3 Post Annealing for ZrO2 Based Charge Trapping Nonvolatile Memory

  • Tang, Zhenjie (College of Physics and Electronic Engineering, Anyang Normal University) ;
  • Zhao, Dongqiu (College of Physics and Electronic Engineering, Anyang Normal University) ;
  • Li, Rong (School of Mathematics and Statistics, Anyang Normal University) ;
  • Zhu, Xinhua (National Laboratory of Solid State Microstructures, Nanjing University)
  • 투고 : 2012.12.04
  • 심사 : 2013.12.28
  • 발행 : 2014.02.25
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초록

Charge trapping nonvolatile memory capacitors with $ZrO_2$ as charge trapping layer were fabricated, and the effects of post annealing atmosphere ($NH_3$ and $N_2$) on their memory storage characteristics were investigated. It was found that the memory windows were improved, after annealing treatment. The memory capacitor after $NH_3$ annealing treatment exhibited the best electrical characteristics, with a 6.8 V memory window, a lower charge loss ~22.3% up to ten years, even at $150^{\circ}C$, and excellent endurance (1.5% memory window degradation). The results are attributed to deep level bulk charge traps, induced by using $NH_3$ annealing.

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