• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.22-29
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• 2006

We demonstrate highly manufacturable Multi-channel Field Effect Transistor (McFET) on bulk Si wafer. McFET shows excellent transistor characteristics, such as $5{\sim}6 times higher drive current than planar MOSFET, ideal subthreshold swing, low drain induced barrier lowering (DIBL) without pocket implantation and negligible body bias dependency, maintaining the same source/drain resistance as that of a planar transistor due to the unique feature of McFET. And suitable threshold voltage ($V_T$) for SRAM operation and high static noise margin (SNM) are achieved by using TiN metal gate electrode.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.14 no.2
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• pp.146-154
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• 1989

A new design method for matching GaAs FET amplifiers using DC block consisting of non-symmetrical two-microstrip line is presented. The non-symmetrical DC block has not only the function of DC block, but the function of impedance matching. Because of the above merits the non-symmetrical DC block can be used for MIC anc MMIC. The measured frequency responses exhibit a symmetrical characteristics at the center frequency, 4(GHz).

• Proceedings of the KIPE Conference
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• 2000.07a
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• pp.591-595
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• 2000

In this paper we proposed a new sensorless drive system for the trapezoidal type brushless DC motor which does not use any mechanical position or speed sensor and applicable to the systems requiring a constant speed and torque such as Fan. For this a novel indirect rotor position sensing technique based on a detailed analysis of the terminal voltage characteristics is proposed in this paper. And a sensorless drive system for the brushless DC motor is implemented using a 87c196mc fo the main microprocessor and a power FET for the inverter. The experimental results will show the validity of the proposed indirect sensing method and the practical use of the sensorless drive