• Title/Summary/Keyword: zinc source materials

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Hybrid complementary circuits based on organic/inorganic flexible thin film transistors with PVP/Al2O3 gate dielectrics

  • Kim, D.I.;Seol, Y.G.;Lee, N.E.;Woo, C.H.;Ahn, C.H.;Ch, H.K.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.479-479
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    • 2011
  • Flexible inverters based on complementary thin-film transistor (CTFTs) are important because they have low power consumption and other advantages over single type TFT inverters. In addition, integrated CTFTs in flexible electronic circuits on low-cost, large area and mechanically flexible substrates have potentials in various applications such as radio-frequency identification tags (RFIDs), sensors, and backplanes for flexible displays. In this work, we introduce flexible complementary inverters using pentacene and amorphous indium gallium zinc oxide (IGZO) for the p-channel and n-channel, respectively. The CTFTs were fabricated on polyimide (PI) substrate. Firstly, a thin poly-4-vinyl phenol (PVP) layer was spin coated on PI substrate to make a smooth surface with rms surface roughness of 0.3 nm, which was required to grow high quality IGZO layers. Then, Ni gate electrode was deposited on the PVP layer by e-beam evaporator. 400-nm-thick PVP and 20-nm-thick ALD Al2O3 dielectric was deposited in sequence as a double gate dielectric layer for high flexibility and low leakage current. Then, IGZO and pentacene semiconductor layers were deposited by rf sputter and thermal evaporator, respectively, using shadow masks. Finally, Al and Au source/drain electrodes of 70 nm were respectively deposited on each semiconductor layer using shadow masks by thermal evaporator. Basic electrical characteristics of individual transistors and the whole CTFTs were measured by a semiconductor parameter analyzer (HP4145B, Agilent Technologies) at room temperature in the dark. Performance of those devices then was measured under static and dynamic mechanical deformation. Effects of cyclic bending were also examined. The voltage transfer characteristics (Vout- Vin) and voltage gain (-dVout/dVin) of flexible inverter circuit were analyzed and the effects of mechanical bending will be discussed in detail.

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Depositon of Transparent Conductive Films by a DC arc Plasmatron

  • Penkov, O.V.;Plaksin, V. Yu.;Joa, S.B.;Kim, J.H.;LEE, H.J.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.480-480
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    • 2010
  • In the present work, we studied effect of the deposition parameters on the structure and properties of ZnO films deposited by DC arc plasmatron. The varied parameters were gas flow rates, precursor composition, substrate temperature and post-deposition annealing temperature. Vapor of Zinc acetylacetone was used as source materials, oxygen was used as working gas and argon was used as the cathode protective gas and a transport gas for the vapor. The plasmatron power was varied in the range of 700-1,500 watts. Flow rate of the gases and substrate temperature rate were varied in the wide range to optimize the properties of the deposited coatings. After deposition films were annealed in the hydrogen atmosphere in the wide range of temperatures. Structure of coatings was investigated using XRD and SEM. Chemical composition was analyzed using x-ray photo-electron spectroscopy. Sheet conductivity was measured by 4-point probe method. Optical properties of the transparent ZnO-based coatings were studied by the spectroscopy. It was shown that deposition by a DC Arc plasmatron can be used for low-cost production of zinc oxide films with good optical and electrical properties. Sheet resistance of 4 Ohms cm was achieved after the deposition and 30 min annealing in the hydrogen at $350^{\circ}C$. Elevation of the substrate temperature during the deposition process up to $350^{\circ}C$ leads to decreasing of the film's resistance due to rearrangement of the crystalline structure.

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Effect of Water Content on the Morphology of ZnO Powders Synthesized in Binary Solvent Mixtures by Glycol Process

  • Phimmavong, Kongsy;Song, Jeong-Hwan;Cho, Seung-Beom;Lim, Dae-Young
    • Journal of the Korean Ceramic Society
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    • v.54 no.3
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    • pp.211-216
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    • 2017
  • ZnO nanopowder was synthesized using a relatively facile and convenient glycol process. ZnO nanopowder was successfully synthesized at temperatures as low as $125^{\circ}C$ using zinc acetate as the Zn source and 1,4-butanediol as the solvent. Then, the effects of water content on the growth process and morphological evolution of ZnO powders were investigated using 1,4-butanediol and water as binary solvent mixtures. Using pure 1,4-butanediol at a temperature above $125^{\circ}C$, the prepared hexagonal ZnO nanopowder exhibited a quasi-spherical shape with average crystalline size of approximately 30 - 50 nm. It is also demonstrated that the morphology of ZnO powders can be controlled by the addition of various water content in 1,4-butanediol. With increasing water content, the morphologies of the ZnO powders changed sequentially from quasi-spherical to hexagonal plate and pyramid, and finally to hexagonal prismatic with a pyramidal tip. A sharp peak centered at 384 nm in the UV region and a weak broad peak in the visible region between 450 and 700 nm were shown in the room temperature PL spectra of the ZnO synthesized using the glycol process, regardless of the addition of water, suggesting that ZnO nanopowders with the best crystallinity were obtained under these conditions.

Growth of Hexagonal Boron Nitride Thin Films on Silicon Using a Single Source Precursors

  • Boo, Jin-Hyo;Lee, Soon-Bo;Casten Rohr;Wilson Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 1998.02a
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    • pp.120-120
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    • 1998
  • Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

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Effects of Cadmium, Copper, Chromium, Nickel, Silver, and Zinc on the Embryonic Development of the Sea Urchin, Strongylocentrotus intermedius (북쪽말똥성게 (Strongylocentrotus intermedius) 배아 (embryo)를 이용한 중금속에 대한 민감도 비교)

  • Ryu, Tae-Kwon;Hwang, In-Young;Lee, Taek-Kyun;Yoon, Jun-Heon;Lee, Chang-Hoon
    • Environmental Analysis Health and Toxicology
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    • v.25 no.1
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    • pp.19-26
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    • 2010
  • Discharged materials from the point or non-point source are released into the sea, and as the results, marine environment is directly affected. We must estimate the impacts of contaminants to marine pollution rapidly and accurately. Therefore, it is needed on early warning system for appreciating marine environmental impacts, and required a bioassay to evaluate abnormal changes. A bioassay test was developed to examine the effects of heavy metal contaminants on the early life stages of the marine annimals. We have studied the effects of metals on early development of a sea urchin species, Strongylocentrotus intermedius. S. intermedius embryos were tested with six metals (Cu, Ag, Zn, Cd, Cr, Ni) and showed the highest sensitivity to Cu as well as the lowest sensitivity to Cd. The order of biological impact for metals was Cu>Ag>Ni>Zn>Cr>Cd. In accordance with the results, sea urchins embryos can provide biological criteria for seawater quality assessment. The sensitivity of developmental bioassay whith S. intermedius is at intermediate level among marine organisms commonly used in aquatic bioassays. And this sea urchin can be routinely employed as a test organism for ecotoxicity assays.

Improved Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors by AZO/Ag/AZO Multilayer Electrode

  • No, Young-Soo;Yang, Jeong-Do;Park, Dong-Hee;Kim, Tae-Whan;Choi, Ji-Won;Choi, Won-Kook
    • Journal of Sensor Science and Technology
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    • v.22 no.2
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    • pp.105-110
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    • 2013
  • We fabricated an a-IGZO thin film transistor (TFT) with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = 400/50 ${\mu}m$) showed a subs-threshold swing of 3.78 V/dec, a minimum off-current of $10^{-12}$ A, a threshold voltage of 0.41 V, a field effect mobility of $10.86cm^2/Vs$, and an on/off ratio of $9{\times}10^9$. From the ultraviolet photoemission spectroscopy, it was revealed that the enhanced electrical performance resulted from the lowering of the Schottky barrier between a-IGZO and Ag due to the insertion of an AZO layer and thus the AZO/Ag/AZO multilayer would be very appropriate for a promising S/D contact material for the fabrication of high performance TFTs.

An Experimental Study on a Solenoid Eddy Current Sensor to inspect Deteriorations in Overhead Distribution Lines (가공 배전선의 열화를 검출하기 위한 솔레노이드 와전류 센서의 실험적 연구)

  • 김성덕
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.13 no.1
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    • pp.77-85
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    • 1999
  • This paper deals with an experirrental study of a nondestructive testing system using a solenoid eddy currnet sensor to inspect deteriorations in overhead distribution lines, such as broken wires, severe local corrosion or zinc loss. Corrosion rrechanisrn for ACSR and ACSR-OC is discussed and characteristics for a solenoid sensor to insprt the georretrical pararreters of the coil and testing materials impOOance are briefly analyzed. A measurement system having a constant current source, a signal processing unit and a motor driver is impIemented. This instrument has such capabilities as detecting the sensor output and estimating dinHlsions of the testing conductors, continuously. As a result, it was shown that the eddy current sensor with an encircling coil could effectively estimate the diatreter change due to deteriorations in overhead distribution lines. lines.

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Structures and properties of vacuum-evaporated Zn thin films with various seed layers (진공증착된 Zn박막의 seed layer에 따른 구조와 특성)

  • 민복기;김인성;송재성;이병윤;박경엽;위상봉
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.328-331
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    • 2000
  • The effect of the constituent elements and their composition of the seed layer on the properties of the evaporated Zn thin films was investigated. It was carried out by the analysis of the preferred orientation and the grain size, and the corrosion characteristics. Seed layers were prepared by evaporation of Al and AlCu respectively, and here the Cu content as additives of the source materials of seed layers were designed 5 a/o to 20 a/o. The values of full width at half maximum (FWHM) of the (002) x-ray diffraction peaks of Zn decreased by increasing the amount of the additives on Al seed layer, as a results, the grain sizes also decreased. In order to characteristics of Zn thin films evaporated on the various seed layers, electrical resistivity changes with a function of time at the temperature of 40$^{\circ}C$ and the relative humidity of 80%, as a result, the relative resistivity changes were increased by decreasing the grain size and the FWHM values of (002) peaks of Zn.

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The Changing Patterns of Demand-Supply and Role of Mineral Resources in Economic Growth during Industrialization of the Republic of Korea (한국공업화과정(韓國工業化過程)에서의 광물자원(鑛物資源)의 수급구조변화(需給構造變化)와 경제성장(經濟成長)에 있어서의 역할(役割))

  • Yun, Suckew
    • Economic and Environmental Geology
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    • v.18 no.1
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    • pp.65-92
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    • 1985
  • A total of 12 mineral commodities significant in domestic output, economy and/or strategy of the Republic of Korea are chosen to examine the structural changes in production and demand-supply of these minerals during the last two decades of her industrialization. These include iron and manganese ores as the raw materials for iron and steel making, copper, zinc and tungsten ores among other non-ferrous metallic minerals, limestone (cement), kaolin, talc, pyrophyllite and graphite among other non-metallic minerals, and anthracite coal as the only domestic source of fossil energy. These are reviewed historically in time-series based on the statistical data which are tabulated and graphed in terms of domestic output, export, import, apparent demand-supply, its increasing rate, and self-sufficiency rate of each commodity. The increasing rates of demand-supply (IRDS) of some more important commodities are compared with those of Gross Domestic Production (GDP) and Economic Growth Rate (EGR) to evaluate how the IRDS contributed to the GDP and EGR. The major results revealed are as follows: Among the 12 commodities, the domestic output of 8 commodities appeared to have grown with steady upward trends: they are ores of lead, zinc and tungsten, limestone (cement), kaolin, talc, pyrophyllite and anthracite coal. Two commodities, ores of iron and copper, continued with unchanging or slightly declining trends and varied fluctuations, in spite of their cardinal importance to the heavy industry and strategy of Korea. The remaining two, graphite and manganese ore, have gradualy declined in domestic output in which the former has still enough resource potential but the latter has not and virtually ceased its domestic output. Trade patterns for mineral commodities in the Republic of Korea during the last two decades have changed greatly, being marked by a shift from mineral-exporting to mineral importing, mainly because of increasing consumption of mineral raw materials for industrialization rather than beceuse of decreasing output of domestic mineral commodities in quantity. In terms of trade patterns, the 12 commodities concerned in this study can be classified into the following four groups. The 1st group - ores of lead and tungsten have only been exported without imports. The 2nd group - amorphous graphite, and pyrophyllite have mainly been exported but partly been imported. The 3rd group - kaolin, talc and crystalline graphite have equally been exported and imported, but quantity of imports have rapidly been increased with time. The 4th group - ores of iron, manganese and zinc have shifted from exports to imports during the industrialization, particularly owing to the initiation of iron and steel making by the Pohang Iron and Steel Company in the middle 1970' s and the new establishment of the Onsan Zinc Refinery in the late 1970' s. All of the 12 commodities under considerations were far above 100% in self-sufficiency rate before or in the early 1960' s. Recently, however, most of them have been declined to below 100% except for those of limestone (cement) and pyrophyllite. It is particularly serious to identify that the self-sufficiency rates of the three important metallic minerals, iron, copper and manganese ores in 1982 appeared to be 5.1%, 0.5%, and 0.01%, respectively. The average self-sufficiency rate of the total domestic minerals produced in 1982 was 14.4% (in value) for that year. Mining industry appeared to be extremely high in its intermediate demand rate whereas its intermediate input rate to be quite low indicating that mineral raw materials have been exerted strong forward linkage effects upon the other industries rather than backward linkage effects. In comparing the curves of increasing rates of demand-supply of several major minerals - iron ore, manganese ore, copper ore, limestone (cement), kaolin, and anthracite coal - with those of Gross Domestic Production and Economic Growth Rate drawn on every graph, it is clearly shown that the curves of increasing rates of demand-supply comprise around 6 to 7 periods of cycles which roughly harmonious with those of the curves of GDP and EGR, except for the curve of anthracite coal of which the configuration seems to have resulted from the (artificial) government's mineral policy rather than from economic free market mechanism. The harmonic feature of these curves well suggests that the increasing rates of demand-supply of major minerals have been significantly contributed to the GDP and EGR. In addition, the wider amplitudes of the iron, manganese and copper curves than those of the limestone (cement) and kaolin curves indicate that the contribution of the former, metallic commodities, has been greater than that of the latter, non-metallic commodities.

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Electrical Characteristics of Ambipolar Thin Film Transistor Depending on Gate Insulators (게이트 절연특성에 의존하는 양방향성 박막 트랜지스터의 동작특성)

  • Oh, Teresa
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.5
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    • pp.1149-1154
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    • 2014
  • To observe the tunneling phenomenon of oxide semiconductor transistor, The Indium-gallum-zinc-oxide thin film transistors deposited on SiOC as a gate insulator was prepared. The interface characteristics between a dielectric and channel were changed in according to the properties of SiOC dielectric materials. The transfer characteristics of a drain-source current ($I_{DS}$) and gate-source voltage ($V_{GS}$) showed the ambipolar or unipolar features according to the Schottky or Ohmic contacts. The ambipolar transfer characteristics was obtained at a transistor with Schottky contact in a range of ${\pm}1V$ bias voltage. However, the unipolar transfer characteristics was shown in a transistor with Ohmic contact by the electron trapping conduction. Moreover, it was improved the on/off switching in a ambipolar transistor by the tunneling phenomenon.