• 한국자동차공학회논문집
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• 제13권5호
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• pp.42-49
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• 2005

In general, multi-lap spot weld joints are frequently present in automobile. Most research, however, has been focused on the single-lap spot weld joints until now. In this paper, tensile-shear strength tests are performed to examine the weldability of 3-lap spot joint welded by using the high strength steel sheet and the zinc coated steel sheet. The indentation depth and nugget diameter are used to propose the optimum welding conditions. The weldability is affected by the welding current and welding time for 3-lap spot joint. Meanwhile the expulsions is round to decrease with the increase of electrode force. The optimum welding conditions are presented for 3-lap spot joints of high strength steel sheet and zinc coated steel sheet.

• Transactions on Electrical and Electronic Materials
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• 제11권1호
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• pp.29-32
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• 2010

In this study, transparent and conductive Al-doped zinc oxide (AZO) films were prepared on a glass substrate by an radio frequency (RF) magnetron sputtering method using a 150-nm-thick AZO target (Al: 2 wt.%) at room temperature. We investigated the effects of RF power between 100-350 W (in steps of 50 W) on the structural, electrical, and optical properties of the AZO films. The thickness and cross-sectional images of the films were observed by field emission scanning electron microscopy. The thicknesses of all films were kept constant at 150 nm and grown on a glass substrate. The grain sizes of the AZO films were determined with the X-ray diffraction by using the Scherrer' equation, and their electrical properties were investigated using a Hall effect electronic transport measurement system. The transmittance of the AZO films was also measured by an ultraviolet-visible spectrometer.

• Toxicological Research
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• 제28권2호
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• pp.123-127
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• 2012

Voltammetric detection of the toxic Zn ion was investigated using a fluorine-doped graphite pencil electrode (FPE). It is notable from the study that pencils were used as reference and working electrodes. In all the experiments, a clean seawater electrolyte solution was used to yield good results. The analytical working range was attained to 10 ${\mu}gL^{-1}$. The optimized voltammetric condition was examined to maximize the effect of the detection of trace Zn. The developed sensor was applied to an earthworm's tissue cell. It was found that the methods can be applicable to in vivo fluid or agriculture soil and plant science.

• 기술사
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• 제14권4호
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• pp.15-25
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• 1981

Electrical behaviors of the divalent silver oxide-zinc cell were analyzed for imporving capacity and keeping electrodes from passivation or sharp increases of cell internal resistance in the course of discharge. One of primary factors in relation to lowering performance can be depicted by cell internal resistance increase being created by various routes, first by insufficiency and/or the carbonation of the electrolyte, secondly by barrier blockage, thirdly by electrode passivation which are due to improper material use of wrong processing, and by gassing as fourth cause. The carbonation causes electrobyte to have impedance up as well as poor amalgamation, resulting in vigorous corrosion reaction of copper plated inner top, evolving hydrogen gas. Electrical characteristics of the cell was reviewed to elucidate relationships between the discharge capacity and the cell internal resistance.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1526-1529
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• 2005

Zinc oxide films have been actively investigated as transparent electrode materials for display. We report the effect of the working pressures on electro-optical properties of Al-doped ZnO thin films deposited by d.c. magnetron sputtering. The resistivity of the ZnO thin films was depended on atomic bombardment effect by working pressure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.443-443
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• 2012

We fabricated a-IGZO TFT with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. Enhanced electrical device performance of a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = = 400/50 mm) was achieved with a subs-threshold swing of 3.78 V/dec, a minimum off-current of 10-12 A, a threshold voltage of 1.80 V, a field effect mobility of 10.86 cm2/Vs, and an on/off ration of 9x109. It demonstrated the potential application of the AZO/Ag/AZO film as a promising S/D contact material for the fabrication of the high performance TFTs.

• 한국재료학회지
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• 제16권6호
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• pp.346-350
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• 2006

Al-doped ZnO (AZO) thin films were grown on type of glass#1737 substrates by DC magnetron sputtering. The structural, electrical and optical properties of the films were investigated as a function of various plasma discharge power. The obtained films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The lowest resistivity was $6.0{\times}10^{-4}{\Omega}cm$ with the carrier concentration of $2.69{\times}10^{20}cm^{-3}$ and Hall mobility of 20.43 $cm^2/Vs$. The average transmittance in the visible range was above 90%.

• 한국전기전자재료학회논문지
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• 제30권8호
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• pp.491-495
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• 2017

We investigated solution-processed indium-zinc oxide (IZO) thin-film transistors (TFTs) by inserting a 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD) buffer layer. This buffer layer efficiently tuned the energy level between the semiconducting oxide channel and metal electrode by increasing charge extraction, thereby enhancing the overall device performance: the IZO TFT with embedded PBD layer (thickness: 5 nm; width: $2,000{\mu}m$; length: $200{\mu}m$) exhibited a field-effect mobility of $1.31cm^2V^{-1}s^{-1}$, threshold voltage of 0.12 V, subthreshold swing of $0.87V\;decade^{-1}$, and on/off current ratio of $9.28{\times}10^5$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.211.1-211.1
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• 2013

We fabricate the conductive zinc oxide(ZnO) thin film using UV-enhanced atomic layer deposition. ZnO is semiconductor with a wide band gap(3.37eV) and transparent in the visible region. ZnO can be deposited with various method, such as metal organic chemical vapour deposition, magnetron sputtering and pulsed laser ablation deposition. In this experiment, ZnO thin films was deposited by atomic layer deposition using diethylzinc (DEZ) and D.I water as precursors with UV irradiation during water dosing. As a function of UV exposure time, the resistivity of ZnO thin films decreased dramatically. We were able to confirm that UV irradiation is one of the effective way to improve conductivity of ZnO thin film. The resistivity was investigated by 4 point probe. Additionally, we confirm the thin film composition is ZnO by X-ray photoelectron spectroscopy. We anticipate that this UV-enhanced ZnO thin film can be applied to electronics or photonic devices as transparent electrode.

• 대한환경공학회지
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• 제31권1호
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• pp.29-34
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• 2009

표면처리폐수 내 질산성 질소를 제거하기 위한 전기화학적 처리공정에서 전극간격, 환원제, 1단 처리수 반송, 타 물질과 동시 처리 등 네 가지 조건을 변화시키며 실험을 진행하였다. 실험 결과, 전극간격은 10 mm일 때 질산성 질소 제거효율이 높았으며 10 mm 보다 전극간격이 좁아질 경우 농도분극 현상의 증가로 인해 제거효율이 감소하며 10 mm 보다 넓어질 경우 전압이 상승하여 에너지 소모가 증가하였다. 환원제 영향에 대한 실험 결과, 질산성 질소가 환원되는 과정에서 수소가 소모되기 때문에 수소이온 농도가 높은 산성조건에서 더 원활한 환원반응이 이루어졌으며 아연을 1.2배 투입할 경우 질산성 질소와의 반응량이 증가하여 질산성 질소 제거효율이 증가하였다. 1단 처리수를 반송할 경우 난류가 형성되어 환원전극에 부착된 아연이 탈착되어 재 이용되고 내부 확산이 증가하여 농도분극현상이 감소함으로 인해 질산성 질소 제거효율이 증가하였으며 아연 투입량 감소 효과가 나타났다. 암모니아성 질소는 질산성 질소 제거에 영향을 미치지 않았고 폐수 내 염소성분이 충분할 경우 질산성 질소와 동시 처리에도 문제가 없는 것으로 나타났다. 중금속은 환원되는 과정에서 전자를 소모하여 질산성 질소 제거효율은 감소하지만 전류밀도 증가나 본 장치의 전단을 중금속 제거용으로 사용하는 방법 등으로 해결이 가능할 것으로 생각한다.