• Title/Summary/Keyword: yttrium oxyfluoride

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Solid-State Synthesis of Yttirum Oxyfluoride Powders and Their Application to Suspension Plasma Spray Coating (Yttirum Oxyfluoride 원료의 고상합성 및 서스펜션 플라즈마 스프레이 코팅 응용)

  • Park, Sang-Jun;Kim, Hyungsun;Lee, Sung-Min
    • Korean Journal of Materials Research
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    • v.27 no.12
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    • pp.710-715
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    • 2017
  • We synthesized YOF(yttirum oxyfluoride) powders through solid state reactions using $Y_2O_3$ and $YF_3$ as raw materials. The synthesis of crystalline YOF was started at $300^{\circ}C$ and completed at $500^{\circ}C$. The atmosphere during synthesis had a negligible effect on the synthesis of the YOF powder under the investigated temperature range. The particle size distribution of the YOF was nearly identical to that of the mixed $Y_2O_3$ and $YF_3$ powders. When the synthesized YOF powders were used as a raw material for the suspension plasma spray(SPS) coating, the crystalline phases of the coated layer consisted of YOF and $Y_2O_3$, indicating that oxidation or evaporation of YOF powders occurred during the coating process. Based on thermogravimetric analysis, the crystalline formation appeared to be affected by the evaporation of fluoride because of the high vapor pressure of the YOF material.

Solid-state synthesis of yttrium oxyfluoride powders and their application to plasma spray coating (옥시불화이트륨 분말의 고상합성 및 플라즈마 스프레이 코팅 적용)

  • Lee, Jung-Il;Kim, Young-Ju;Chae, Hui Ra;Kim, Yun Jeong;Park, Seong Ju;Sin, Gyoung Seon;Ha, Tae Bin;Kim, Ji Hyeon;Jeong, Gu Hun;Ryu, Jeong Ho
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.31 no.6
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    • pp.276-281
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    • 2021
  • In order to manufacture a semiconductor circuit, etching, cleaning, and deposition processes are repeated. During these processes, the inside of the processing chamber is exposed to corrosive plasma. Therefore, the coating of the inner wall of the semiconductor equipment with a plasma-resistant material has been attempted to minimize the etching of the coating and particle contaminant generation. In this study, we synthesized yttrium oxyfluoride (YOF) powder by a solid-state reaction using Y2O3 and YF3 as raw materials. Mixing ratio of the Y2O3 and YF3 was varied from 1.0:1.0 to 1.0:1.6. Effects of the mixing ratio on crystal structure and microstructure of the synthesized YOF powder were investigated using XRD and FE-SEM. The synthesized YOF powder was successfully applied to plasma spray coating process on Al substrate.

Preparation of Photocurable Slurry for DLP 3D Printing Process using Synthesized Yttrium Oxyfluoride Powder (합성 불산화 이트륨 분말을 이용한 DLP 3D 프린팅용 광경화성 슬러리 제조)

  • Kim, Eunsung;Han, Kyusung;Choi, Junghoon;Kim, Jinho;Kim, Ungsoo
    • Korean Journal of Materials Research
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    • v.31 no.9
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    • pp.532-538
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    • 2021
  • In this study, a spray dryer is used to make granules of Y2O3 and YF3, and then Y5O4F7 is synthesized following heat treatment of them under Ar gas atmosphere at 600 ℃. Single and binary monomer mixtures are compared and analyzed to optimize photocurable monomer system for DLP 3D printing. The mixture of HEA and TMPTA at 8:2 ratio exhibits the highest photocuring properties and low viscosity with shear thinning behavior. The optimized photocurable monomer and synthesized Y5O4F7 are therefore mixed and applied to printing process at variable solid contents (60, 70, 80, & 85 wt.%) and light exposure times. Under optimal light exposure conditions (initial exposure time: 1.2 s, basic exposure time: 5 s), YOF composites at 60, 70 & 80 wt.% solid contents are successfully printed. As a result of measuring the size of the printed samples compared to the dimensions of the designed bar type specimen, the deviation is found to increase as the YOF solid content increases. This shows that it is necessary to maximize the photocuring activity of the monomer system and to optimize the exposure time when printing using a high-solids ceramic slurry.

Effect of AlF3 addition to the plasma resistance behavior of YOF coating deposited by plasma-spraying method (플라즈마-스프레이법에 의해 코팅한 옥시불화이트륨(YOF) 증착층의 플라즈마 내식성에 미치는 불화알루미늄(AlF3) 첨가 효과)

  • Young-Ju Kim;Je Hong Park;Si Beom Yu;Seungwon Jeong;Kang Min Kim;Jeong Ho Ryu
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.33 no.4
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    • pp.153-157
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    • 2023
  • In order to manufacture a semiconductor circuit, etching, cleaning, and deposition processes are repeated. During these processes, the inside of the processing chamber is exposed to corrosive plasma. Therefore, the coating of the inner wall of the semiconductor equipment with a plasma-resistant material has been attempted to minimize the etching of the coating and particle contaminant generation. In this study, we mixed AlF3 powder with the solid-state reacted yttrium oxyfluoride (YOF) in order to increase plasma-etching resistance of the plasma spray coated YOF layer. Effects of the mixing ratio of AlF3 with YOF powder on crystal structure, microstructure and chemical composition were investigated using XRD and FE-SEM. The plasma-etching ratios of the plasma-spray coated layers were calculated and correlation with AlF3 mixing ratio was analyzed.