• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.309-309
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• 2011

There have been large research activities on the high quality oxide films for the realization oxide based electronics. However, the interface interdiffusion prohibits achieving high quality oxide films, when the oxide films are grown on non-oxide substrates. In the case of Si substrates, there exist lattice mismatch and interface interdiffusion when oxide films deposited on direct Si surface. In this presentation, we report the interface characteristics of yttria-stabilized zirconia films grown on silicon substrates. From x-ray reflectivity analysis we found that the film thickness and interface roughness decreased as the growth temperature increased, indicating that the growth mechanism varies and the chemical reaction is limited to the interface as the growth condition varies. Furthermore, the packing density of the film increased as the growth temperature increased and the film thickness decreased. X-ray photoelectron spectroscopy analysis of very thin films revealed that the amount of chemical shift increased as the growth temperature increased. Intriguingly, the direction of the chemical shift of Zr was opposite to that of Si due to the second nearest neighbor interaction.

• 한국진공학회지
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• 제6권1호
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• pp.1-8
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• 1997

SUS 316 합금의 노출 조건에 따른 오염 과정과 구조를 x-ray photoelectron spectroscopy실험을 통해 보았다. SUS표면에 부착된 오염 물질은 주로 metal-oxide, metal-H-oxide, CO, COH, 그리고 CxHy임을 보았다. 오염 물질의 층별 형성 구조는 $C_xH_y$/CO(COH)/metal-H-oxide/metal-oxide가 SUS합금 위에 있는 형태이다. 오염 과정은 주로 금속 구성물의 산화와 $C_xH_y$의 흡착과정 두 가지에 의해서 이루어지는 것을 볼 수 있 었다. 초고진공 환경에서는, 오염은 주로 산화층 형성에 의한 것으로 노출 시간이 증가함에 따라 산화층의 두께가 계속 증가하였다. 고진공 또는 높은 압력 환경에서는 노출 초기에 대 부분의 산화층이 형성되고, 노출 시간의 증가에 대해서는 주로 $C_xH_y$에 의한 오염이 계속 증 가하였다. 스테인레스 표면 안에 깊이 분포하고 있는 metal-oxide의 농도는 지수형으로 감 소하는 형태의 분포를 가지며 그 두께는 대기 노출된 시료의 경우 광전자의 평균자유행로 규모로 형성되는 것을 보았고, 특히 Fe-oside가 Cr-oxide를 덮고 있는 표면 편석 현상이 보 였다.

• Transactions on Electrical and Electronic Materials
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• 제16권6호
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• pp.346-350
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• 2015

In this study, we carried out an investigation of the etch characteristics of TiO₂ thin films and the selectivity of TiO₂ to SiO₂ in adaptive coupled C1₂/Ar plasma. The maximum etch rate of the TiO₂ thin film was 136±5 nm/min at a gas mixing ratio of C1₂/Ar (75%:25%). The X-ray photoelectron spectroscopy (XPS) analysis showed the efficient destruction of oxide bonds by the ion bombardment as well as the accumulation of low volatile reaction products on the etched surface.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.117-117
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• 2015

Availability of X-ray photoelectron spectroscopy (XPS) for the identification of ionic liquids (ILs) was tested. Commercially available ionic liquids (1-butyl-3-methyl imidazolium tetrafluoroborate ([BMIM] $BF_4$), (1-butyl-3-methyl imidazolium trifluoromethanesulfonate ([BMIM] OTf), (1-butyl-3-methyl imidazolium hexafluorophosphate ([BMIM] $PF_6$), 1-hexyl-3-imidazolium hexafluorophosphate ([HMIM] $PF_6$), and 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMIM] $Tf_2N$) were qualitatively and semi-quantitatively analyzed with XPS. In order to confirm whether the results of XPS were correct, conventional method such as a nuclear magnetic resonance (NMR) was performed. After the XPS results were convinced by NMR, we synthesized ILs (1-(4-sulfonic acid) butyl-3-butylimidazolium trifluoromethanesulfonate ([SBBIM] OTf), 1-(4-sulfonic acid) propyl-3-methylimidazolium trifluoromethanesulfonate ([SPMIM] OTf), and 1-(4-sulfonic acid) propyl-3-butylimidazolium trifluoromethanesulfonate ([SPBIM] OTf) and analyzed it with XPS and NMR as well. It was successful the usage of XPS to analyze ILs without any purification processes.

• Transactions on Electrical and Electronic Materials
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• 제6권4호
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• pp.164-168
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• 2005

Effects of high-temperature slurry were investigated on the chemical mechanical polishing (CMP) performance of tetra-ethyl ortho-silicate (TEOS) film with silica and ceria slurries by the surface analysis of X-ray photoelectron spectroscopy (XPS). The pH showed a slight tendency to decrease with increasing slurry temperature, which means that the hydroxyl $(OH^-)$ groups increased in slurry as the slurry temperature increased and then they diffused into the TEOS film. The surface of TEOS film became hydro-carbonated by the diffused hydroxyl groups. The hydro-carbonated surface of TEOS film could be removed more easily. Consequently, the removal rate of TEOS film improved dramatically with increasing slurry temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.372-373
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• 2006

Chemical kinetics affects Cu CMP results (removal rate, Non uniformity etc.) Because Cu is removed by chemical action. Key factors in chemical kinetics are process temperature and concentration of slurry components. In this study, Hydrogen peroxide and citric acid were selected as a oxidant and a complexing agent and Slurry were made by mixing this components. In order to study effects of Chemical Kinetics, X-ray photoelectron spectroscopy (XPS) were performed on Cu sample after etching test as concentration of citric acid and slurry temperature. Finally Cu CMP was performed as same conditions.

• Journal of Radiation Protection and Research
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• 제45권1호
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• pp.11-15
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• 2020

Background: There have been various studies to investigate the mechanisms of DNA damage from low-energy electrons. To understand the mechanism of these strand breaks, it is necessary to investigate the dissociation mechanism of the DNA constituents, that is, bases, sugars, and phosphates. Materials and Methods: We studied the dissociation of thymine base upon interaction with low-energy electrons. For this experiment, thymine powder was pressed onto the indium base and irradiated by 5 eV electrons. Results and Discussion: Non-irradiated and irradiated thymine samples were compared and analyzed using the X-ray photoelectron spectroscopic technique to analyze the dissociation patterns of the molecular bonds after low-energy electron irradiation of thymine. Conclusion: With 5 eV electron irradiation, C-C and N-C = O bonds are the primary dissociations that occur in thymine molecules.

• Transactions on Electrical and Electronic Materials
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• 제11권6호
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• pp.285-287
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• 2010

This paper introduces homogeneous liquid crystal (LC) orientations on chemically modulated polystyrene (PS) surfaces using various ion beam (IB) exposure times. Transparent PS was replaced with conventional polyimide material. As a non-contact process, the IB bombardment process induced LC orientation parallel to the IB process. Through x-ray photoelectron spectroscopy, it was shown that the chemical compositional changes of the IB-irradiated PS surfaces were determined as a function of IB exposure time. Using this analysis, the optimal IB bombardment condition was determined at an IB exposure time of up to 15 seconds. Moreover, thermal stability on IB-irradiated PS surfaces were carried out which showed that a relatively high IB exposure time induced a thermally stable LC alignment property.

• 한국공작기계학회논문집
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• 제14권1호
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• pp.44-51
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• 2005

Material degradation is a multibillion-dollar problem which affects all the industries amongst others. The last decades have seen the development of newer and more effective techniques such as Focused-ion beam(FIB), Transmission electron microscopy(TEM), Secondary-ion mass spectroscopy(SIMS), auger electron spectroscopy(AES), X-ray Photoelectron spectroscopy(XPS) , Electrochemical impedance spectroscopy(EIS), Photo- stimulated luminescence spectroscopy(PSLS), etc. to study various forms of material degradation. These techniques are now used routinely to obtain information on the chemical state, depth profiling, composition, stress state, etc. to understand the degradation behavior. This paper describes the use of these techniques specifically applied to materials degradation and failure analysis.

• 한국펄프종이공학회:학술대회논문집
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• 한국펄프종이공학회 1999년도 Pre-symposium of the 10th ISWPC Recent Advances in Paper Science and Technology
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• pp.276-281
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• 1999

The surfaces of sheets added with N-chloro-polyacrylamide (N-Cl-PAM) are analyzed using X-ray photoelectron spectroscopy (XPS) to clarify the chemical bonding involved in the paper strength development induced by N-Cl-PAM. The comparison of the observed N1s chemical shift of the sheet with those of the paper strength additives and the model compound, 1-butyryl-3-propyl urea, illustrated the presence of covalent bonds of alkyl acyl urea and urethane on the fiber surfaces. Thus the formation of the covalent bonds by N-Cl-PAM themselves and by N-Cl-PAM with cellulose and hemicellulose may be an explanation for much higher effectiveness of N-Cl-PAM on the improvement of wet strength of paper than A-PAM.