• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.2
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• pp.306-316
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• 2016

In this paper, an NMOS-diode eFuse OTP (One-Time Programmable) memory cell is proposed using a parasitic junction diode formed between a PW (P-Well), a body of an isolated NMOS (N-channel MOSFET) transistor with the small channel width, and an n+ diffusion, a source node, in a DNW (Deep N-Well) instead of an NMOS transistor with the big channel width as a program select device. Blowing of the proposed cell is done through the parasitic junction formed in the NMOS transistor in the program mode. Sensing failures of '0' data are removed because of removed contact voltage drop of a diode since a NMOS transistor is used instead of the junction diode in the read mode. In addition, a problem of being blown for a non-blown eFuse from a read current through the corresponding eFuse OTP cell is solved by limiting the read current to less than $100{\mu}A$ since a voltage is transferred to BL by using an NMOS transistor with the small channel width in the read mode.

• Journal of the Korean Society for Nondestructive Testing
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• v.36 no.1
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• pp.18-26
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• 2016

The semiconductor industry is one of the key industries of Korea, which has continued growing at a steady annual growth rate. Important technology for the semiconductor industry is high integration of devices. This is to increase the memory capacity for unit area, of which key is photolithography. The photolithography refers to a technique for printing the shadow of light lit on the mask surface on to wafer, which is the most important process in a semiconductor manufacturing process. In this study, the width and step-height of wafers patterned through this process were measured to ensure uniformity. The widths and inter-plate heights of the specimens patterned using photolithography were measured using transmissive digital holography. A transmissive digital holographic interferometer was configured, and nine arbitrary points were set on the specimens as measured points. The measurement of each point was compared with the measurements performed using a commercial device called scanning electron microscope (SEM) and Alpha Step. Transmission digital holography requires a short measurement time, which is an advantage compared to other techniques. Furthermore, it uses magnification lenses, allowing the flexibility of changing between high and low magnifications. The test results confirmed that transmissive digital holography is a useful technique for measuring patterns printed using photolithography.

• Journal of Advanced Navigation Technology
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• v.21 no.4
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• pp.377-385
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• 2017

The solar cell need the characteristic interpreting because the solar cell changes greatly according to the isolation, temperature and load in the photovoltaic development. Moreover, to get many energy in photovoltaic development need the position tracking of the sun according to the environment change. Also, The solar cells should be operated at the maximum power point. In this paper, I used microprocessor and sensor and designed to improve the efficiency of the photovoltaic system the photovoltaic position tracker device, and compared the normal photovoltaic system of fixed form with the photovoltaic system of solar position tracked form. Moreover, compared the catalogue of solar cell module and the simulation through a mathematics modelling with the solar cell's characteristic interpreting and composed an power conversion system with boost converter and voltage source inverter. Used the constant voltage control method for maximum power point tracking in boost converter control and, used the SPWM(Sinusoidal Pulse Width Modulation) control method in inverter control. The result was less then 5% when compared the catalogue of solar cell module and the simulation through a mathematics modelling. The boost rate of boost converter was similar to 167 % with the simulation.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.16 no.1
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• pp.47-63
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• 1990

Image analyser was used to understand the condition of skin surface and to evaluate the efficacy of cosmetic treatment. It was unsatisfactory to analyse skin surface structure although several methods using image analyser had been presented. We developed the new system composed of image analyser and Tandem Scanning Reflected Light Microscope (TSRLM) having the remarkable optical sectioning property as image input device. By using this new system, we quantitatively measured the change of skin surface, the depth and width of furrow in micron unit, resulted by cosmetic treatments. And also three dimensional image of skin was reconstructed with serial sectioned images, which were captured through TSRLM, for better understanding of the effect of cosmetic treatment. It was found that skin relief was more easily understood and the change of skin surface caused by cosmetic treatment was more accurately measured by using this system. In addition, we was also aware of the possibility of in vivo direct measurement of skin furrow without replica. It was conceivable that our system could be applicable for study of cosmetic effects further.

• Current Optics and Photonics
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• v.5 no.4
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• pp.444-449
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• 2021

A photonic crystal coupled-cavity waveguide created on silicon-on-insulator is designed to act as a refractive-index-sensing device at midinfrared wavelengths around 4 ㎛. To realize high sensitivity, effort is made to engineer the structural parameters to obtain strong modal confinement, which can enhance the interaction between the resonance modes and the analyzed sample. By adjusting some parameters, including the shape of the cavity, the width of the coupling cavity, and the size of the surrounding dielectric columns, a high-sensitivity refractive-index sensor based on the optimized photonic crystal coupled-cavity waveguide is proposed, and a sensitivity of approximately 2620 nm/RIU obtained. When an analyte is measured in the range of 1.0-1.4, the sensor can always maintain a high sensitivity of greater than 2400 nm/RIU. This work demonstrates the viability of high-sensitivity photonic crystal waveguide devices in the midinfrared band.

• 제어로봇시스템학회:학술대회논문집
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• 2000.10a
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• pp.457-457
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• 2000

The display module of PDP consists of a pair of fine electrode patterned panels. For example, in case of 42" PDP, thousands of electrode patterns should be placed on panel, where length, width, and height of each pattern m one meter, 50${\mu}{\textrm}{m}$, and 30${\mu}{\textrm}{m}$ respectively. And pitch between patterns is around 200${\mu}{\textrm}{m}$. Electrode patterns are frequently damaged during the production process, and thus might be broken. These breakage will result in open-circuited electrical characteristic of a pattern and/or open-circuited electrical characteristic between patterns. Therefore, inspection of pattern defects is the inevitable process to improve production yield rate of the panel. In this paper, we first review several types of PDP pattern defects which affects yield-rate of PDP. And, problems of inspecting such pattern defects by a typical inspection method is addressed. Then, a novel inspection method is proposed to overcome the difficulties, where some new components and the algorithm to detect the electrode defects are explored.ored.

• Journal of the Korean Ceramic Society
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• v.45 no.11
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• pp.739-743
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• 2008

Microfluidic device can be applied in a wide range of chemical and biological technology. In this paper, ceramic-based T-type passive mixers for microfluidic applications were fabricated by LTCC process combined with thick film photolithography. The base ceramic material in thick film was amorphous cordierite $((Mg,Ca)_2Al_4Si_5O_{18})$ and photoimageable polymers were added to give a photosensitivity. Two types of passive mixer, which showed the channel width of 1.0 mm and $200{\mu}m$, respectively, were designed considering mixing efficiency in the channel and their microfluidic properties were discussed in detail.

• Journal of Electrical Engineering and Technology
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• v.2 no.2
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• pp.267-273
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• 2007

A depletion-mode MOSFET has been analyzed to evaluate its electrical behavior using a novel 3-D numerical simulation package. The characterizing analysis of the BC MOSFET was performed through short-channel narrow-channel and small-geometry effects that are investigated, in detail, in terms of the threshold voltage. The DIBL effect becomes significant for a short-channel device with a channel length of $<\;3({\mu}m)$. For narrow-channel devices the variation of the threshold voltage was sharp for $<4({\mu}m)$ due to the strong narrow-channel effect. In the case of small-geometry devices, the shift of the threshold voltage was less sensitive due to the combination of the DIBL and substrate bias effects, as compared with that observed from the short-channel and narrow-channel devices. The characterizing analysis of the narrow-channel and small-geometry devices, especially with channel width of $<\;4({\mu}m)$ and channel area of $<\;4{\times}4({\mu}m^2)$ respectively, can be accurately performed only from a 3-D numerical simulation due to their sharp variations in threshold voltages.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.8
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• pp.8-14
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• 1998

A new process is developed to improve the electrical characteristics of high .beta. and low saturation voltage power transistor for lamp solenoid driver application. To prevent punch-through breakdown, appropriate combination of base doping and base width is necessary in the range of operating voltage of the circuit. The optimum values of base doping and sheet resistance are $Q_{D}$= $1.5{\times}10^{14}$atoms/$\textrm{cm}^2$ and $R_{s}$= 350 $\Omega/\square$ base wodtj $W_{B}$= $2.5{\mu}m$respectively. Under this condition it is possible to control $\beta$ of the transistor to 1500, maintaining $VB_{CBO}$ =200V. To reduce scattered distribution of .beta. of the devices on the wafer, it is necessary to improve emittter predeposition process. As a result, scattered distribution of .beta. of the devices on the wafer was reduced to 1/6 by using the new process. To improve collector to emitter forward voltage drop, $V_{ECF}$ of damper diode, an additional silicon etching process is used, which resulted in improving the value of $V_{eCF}$ from 2.8 V to 1.8V. With the suggested process superior device performance and higher yield are achieved.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.706-713
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• 2002

In the multi-pass welding of pressure vessels or ships, the mechanical touch sensor system is generally used together with a manipulator to measure the gap and depth of the narrow gap to perform seam tracking. Unfortunately, such mechanical touch sensors may commit measuring errors caused by the eterioration of the measuring device. An automation system of narrow gap multi-pass welding using a laser vision system which can track the seam line of narrow gap and which can control welding power has been developed. The joint profile of the narrow gap, with 250mm depth and 28mm width, can be captured by laser vision camera. The image is then processed for defining tracking positions of the torch during welding. Then, the real-time correction of lateral and vertical position of the torch can be done by the laser vision system. The adaptive control of welding conditions like welding Currents and welding speeds, can also be performed by the laser vision system, which cannot be done by conventional mechanical touch systems. The developed automation system will be adopted to reduce the idle time of welders, which happens frequently in conventional long welding processes, and to improve the reliability of the weld quality as well.