• ETRI Journal
• /
• v.24 no.5
• /
• pp.333-340
• /
• 2002

We propose a new process technique for fabricating very high-density trench MOSFETs using 3 mask layers with oxide spacers and a self-aligned technique. This technique reduces the device size in trench width, source, and p-body region with a resulting increase in cell density and current driving capability as well as cost-effective production capability. We were able to obtain a higher breakdown voltage with uniform oxide grown along the trench surface. The channel density of the trench DMOSFET with a cell pitch of 2.3-2.4 ${\mu}m$ was 100 Mcell/$in^2$ and a specific on-resistance of 0.41 $m{\Omega}{\cdot}cm^2$ was obtained under a blocking voltage of 43 V.

• Proceedings of the Optical Society of Korea Conference
• /
• 1998.08a
• /
• pp.192-193
• /
• 1998

At Rutherford Appleton Laboratory(RAL), a high-repetition rate ps exicmer laser-plasma x-ray source has been developed for x-ray lithography with a calibrated output of up to 1 watt X-ray average power at 1nm wavelength. In a previous reports this compact x-ray source was used to print 0.18$\mu$m lines for a gate on Si-FET devices and deep three-dimensional structure with 100$\mu$m length, 25$\mu$m width, and 48 $\mu$m depth for a nanotechnology. The deep X-ray lithography is called as LIGA thchnology and getting a wide interest as a new technology for a nano-device. In this report all this works are summarized.

• Proceedings of the Korean Institute of Intelligent Systems Conference
• /
• 2008.04a
• /
• pp.247-250
• /
• 2008

최근 무선통신용 LSI는 배터리 수명과 관련하여, 저전력 동작이 중요시되고 있다. 따라서 Digital CMOS 신호처리와 더불어 동작 가능한 SI (Switched-Current) circuit를 이용하는 Current-mode 신호처리가 주목받고 있다. 그러나 SI circuit의 기본인 Current Memory는 Charge Injection에 의한 Clock Feedthrough라는 문제점을 갖고 있기 때문에, 전류 전달에 있어서 오차를 발생시킨다. 본 논문에서는 Current Memory의 문제점인 Clock Feedthrough의 해결방안으로 CMOS Switch의 연결을 검토하였고, 0.25${\mu}m$ CMOS process에서 Memory MOS와 CMOS Switch의 Width의 관계는 simulation 결과를 통하여 확인하였으며, MOS transistor의 관계를 분명히 하여, 설게의 지침을 제공한다.

• ETRI Journal
• /
• v.31 no.2
• /
• pp.228-230
• /
• 2009

InP-based planar waveguide 48-channel concave grating demultiplexers with a channel spacing of 0.8 nm (100 GHz) are described and demonstrated. Polarization insensitivity and flattened spectral response are successfully achieved by the introduction of a polarization compensator and a two-focus grating, respectively. The fabricated device shows a polarization-dependent wavelength shift of less than 20 pm and a -3 dB spectral width of about 0.55 nm (68.75 GHz) over all channels.

• Proceedings of the KSR Conference
• /
• 2009.05b
• /
• pp.623-628
• /
• 2009

There is an increasing demand for efficient high power/weight auxiliary power supplies for use on high speed traction application. Many new conversion techniques have been proposed to reduce the voltage and current stress of switching components, and the switching losses in the traditional pulse width modulation(PWM) converter. Especially, the phase shift full bridge zero voltage switching PWM techniques are thought most desirable for many applications because this topology permits all switching devices to operate under zero voltage switching(ZVS) by using circuit parasitic components such as leakage inductance of high frequency transformer and power device junction capacitance. The proposed topology is found to have higher efficiency than conventional soft-switching converter. Also it is easily applicable to phase shift full bridge converter by applying an energy recovery snubber consisted of fast recovery diodes and capacitors.

• Proceedings of the KSR Conference
• /
• 2008.11b
• /
• pp.321-324
• /
• 2008

Recently, there is an increasing demand for efficient high power/weight auxiliary power supplies for use on high speed traction application. many new conversion techniques have been proposed to reduce the voltage and current stress of switching components, and the switching losses in the traditional pulse width modulation(PWM) converter. Among them, the phase shift full bridge zero voltage switching PWM techniques are thought most desirable for many applications because this topology permits all switching devices to operate under zero voltage switching(ZVS) by using circuit parasitic components such as leakage inductance of high frequency transformer and power device junction capacitance. The proposed topology is found to have higher efficiency than conventional soft-switching converter. Also it is easily applicable to phase shift full bridge converter by applying an energy recovery snubber consisted of fast recovery diodes and capacitors.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.927-930
• /
• 2004

We report on a new type of a flat and thin display with a secondary emission electron source. In this display device electrons are multiplied between two secondary emission plates under a high frequency electric field. This principle has a few important advantages over a field emission display: the emission comes from flat plates, which reduces the life-time problems of ion bombardment of field emitter tips. Furthermore, the electron emission is space charge limited which gives a uniform electron distribution. The electrons are extracted from the source and accelerated to a phosphor screen to generate light. Gray levels are made by pulse width modulation.

• Proceedings of the Korea Information Processing Society Conference
• /
• 2020.05a
• /
• pp.476-479
• /
• 2020

본 논문은 전기 자극 장치에 관한 것으로서, 운동상황에 맞게 인공지능 기능이 음악을 선별해 주고 음악의 BPM(beats per minute)에 맞게 전기 자극 장치에서의 PWM(pulse width modulation)신호가 동기화 되어 재활 기능과 더불어 헬스 케어와 관련된 추가적인 기능 및 효과를 제공할 수 있는 개선된 전기 자극 장치에 관한 것이다. 언제 어디서나 간편하게 셀프 운동케어와 할 수 있도록 AR기술을 이용한 카메라가 있는 디지털 디바이스를 활용하며, 해당 신체의 운동부위를 지정하게 되면 이에 맞는 운동방법을 AI기술을 이용하여 적용할 수 있다. 수행자가 잘못 운동을 하는 것을 올바르게 개선시키기 위하여 실시간 AI 음성기능과 텍스트 코칭을 통해서 올바르게 운동할 수 있게 제안하며, 이에 대한 과정과 결과를 시각적으로 보여주면, 결과에 대해서는 리포팅을 하여 사용자가 올바르게 운동을 하고 효과적으로 운동을 했는지에 대해서 정량적인 수치의 운동횟수와 운동량에 대해서 표현해준다.

• Journal of the Korean Society of Fisheries and Ocean Technology
• /
• v.25 no.1
• /
• pp.6-11
• /
• 1989

Some distinctive defects in the conventional stow net were examined and presented in the previous report of this series. To find out the more effective gear by correcting the defects, the authors carried out another experiment by using a newly designed gear. 1. Special features of the newly designed gear are: (1) stretched width of front end on top, bottom and side panel are decreased 20%, on the other hand, the frank of the panels are increased 10% compared with the conventional gear. Front end of top and bottom panels are bias cutten up to 20% of the length of panels. (2) Length of the head rope and ground rope are shortened 6% by changing of the shape of the top and bottom panels. (3) Lacing lines are attached to four longitudinal seaming lines with suitable hanging ratio. (4) Stretched height of the shearing device were shortened 17%, and the buoyancy on top of the device were increased 20%. (5) Length of the biforked pendants were arranged to be shorter on top-most and bottom-most ones, and loner on middle ones. 2. The observed result can be expressed as (1) Wrinkles in the front end of top panels are removed and fringe line of panels become smooth. (2) Opening height of mouth is observed 3% higher than that of the conventional gear. (3) Opening width is 1.5 to 1.6 times wider than that of the conventional gear. (4) Hydrodynamic resistance is decreased 10%-17%.

• Journal of Sensor Science and Technology
• /
• v.23 no.3
• /
• pp.185-191
• /
• 2014

The width of depletion region in a varactor diode can be modulated by varying a reverse bias voltage. Thus, the preferred characteristics of depletion capacitance can obtained by the change in the width of depletion region so that it can select only the desirable frequencies. In this paper, the TV tuner varactor diode fabricated by hyper-abrupt profile control technique is presented. This diode can be operated within 3.3 V of driving voltage with capability of UHF band tuning. To form the hyperabrupt profile, firstly, p+ high concentration shallow junction with $0.2{\mu}m$ of junction depth and $1E+20ions/cm^3$ of surface concentration was formed using $BF_2$ implantation source. Simulation results optimized important factors such as epitaxial thickness and dose quality, diffusion time of n+ layer. To form steep hyper-abrupt profile, Formed n+ profile implanted the $PH_3$ source at Si(100) n-type epitaxial layer that has resistivity of $1.4{\Omega}cm$ and thickness of $2.4{\mu}m$ using p+ high concentration Shallow junction. Aluminum containing to 1% of Si was used as a electrode metal. Area of electrode was $30,200{\mu}m^2$. The C-V and Q-V electric characteristics were investigated by using impedance Analyzer (HP4291B). By controlling of concentration profile by n+ dosage at p+ high concentration shallow junction, the device with maximum $L_F$ at -1.5 V and 21.5~3.47 pF at 0.3~3.3 V was fabricated. We got the appropriate device in driving voltage 3.3 V having hyper-abrupt junction that profile order (m factor) is about -3/2. The deviation of capacitance by hyper-abrupt junction with C0.3 V of initial capacitance is due to the deviation of thermal process, ion implantation and diffusion. The deviation of initial capacitance at 0.3 V can be reduced by control of thermal process tolerance using RTP on wafer.